Toshiba Semiconductor and Storage TCR3DM15,LF(SE

Overview

TCR3DM15,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 1.5 V fixed-output CMOS low-dropout regulator delivering up to 300 mA with 350 mV typical dropout voltage at full load, 38 μVrms output noise, and inrush current protection - designed for power management in space-constrained portable electronics such as smartphones and wearables.

For engineers reviewing the TCR3DM15,LF(SE) datasheet, TCR3DM15,LF(SE) pinout, TCR3DM15,LF(SE) application, or TCR3DM15,LF(SE) equivalent, key selection criteria include its DFN4/DFN4E (1.0 mm × 1.0 mm) ultra-small package, ±1.0% output voltage accuracy at 1.5 V, auto-discharge function, and compatibility with 1.0 μF ceramic input/output capacitors.

Technical Context

The TCR3DM15,LF(SE) integrates an on/off control input with defined logic thresholds (VCT(ON) ≥ 1.0 V, VCT(OFF) ≤ 0.4 V), enabling precise system-level power sequencing. Its internal architecture includes over-current and over-temperature protection circuits, plus an inrush current limiter that suppresses input surge during startup.

It operates across –40°C to +85°C ambient temperature and supports input voltages from 1.75 V to 5.5 V. The device achieves fast load transient response (±80 mV deviation under 1 mA ↔ 300 mA step with 1.0 μF COUT) and 70 dB ripple rejection at 1 kHz - critical for noise-sensitive analog and RF subsystems.

Key Specifications

Pinout & Package

TCR3DM15,LF(SE) uses the ultra-compact DFN4/DFN4E package (1.0 mm × 1.0 mm × 0.58 mm height, 1.3 mg weight) with wettable flank capability for automated optical inspection. The exposed center pad must be connected to GND for thermal and electrical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR3DM15,LF(SE), the XC6215D152MR-G trades inrush protection for slightly lower cost, while the BD3572EFJ-ME2 offers lower dropout at the expense of size and missing auto-discharge - making TCR3DM15,LF(SE) optimal for ultra-dense, rapidly switched portable designs.

Availability

TCR3DM15,LF(SE) is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, IoT edge node MCUs, portable medical diagnostics, and other applications requiring stable component supply in high-volume, space-constrained designs.

Supply support for TCR3DM15,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability analog, power, and logic ICs for consumer, industrial, and automotive markets, with emphasis on miniaturization and efficiency.

The TCR3DM series targets portable electronics requiring ultra-small-footprint, low-noise, and feature-rich LDOs - specifically engineered for battery-powered devices where inrush control, auto-discharge, and ceramic capacitor compatibility are mandatory.

FAQ

What is the guaranteed output voltage accuracy of TCR3DM15,LF(SE) across temperature and load?

The TCR3DM15,LF(SE) guarantees ±1.0% output voltage accuracy for all 1.5 V output variants across –40°C to +85°C ambient temperature and 1 mA to 300 mA load current, per Toshiba's Electrical Characteristics table. This accuracy is maintained without external trimming or calibration, enabling direct use in precision analog and digital core rails. The TCR3DM15,LF(SE) achieves this via laser-trimmed internal feedback resistors and low-drift bandgap reference design.

Does TCR3DM15,LF(SE) require an external pull-up resistor on the CONTROL pin?

No, TCR3DM15,LF(SE) includes an internal pull-down resistor on the CONTROL pin, ensuring a defined logic-low state when the pin is left unconnected. This eliminates the need for external components and prevents unintended regulator activation during power-up or system reset. The TCR3DM15,LF(SE) specifies VCT(OFF) ≤ 0.4 V and VCT(ON) ≥ 1.0 V, allowing direct interfacing with standard GPIOs without level-shifting.

Can TCR3DM15,LF(SE) operate with input voltage below 1.8 V?

Yes, TCR3DM15,LF(SE) supports minimum input voltage of 1.75 V, enabling operation with single-cell lithium batteries down to end-of-discharge (~2.0 V open-circuit). At 1.5 V output and 300 mA load, its 350 mV typical dropout allows functional regulation until VIN drops to ~1.85 V. Below that, the TCR3DM15,LF(SE) enters dropout mode with gradually decreasing VOUT - a behavior explicitly characterized in Toshiba's Dropout Voltage vs. Output Current curves.

What is the thermal performance of TCR3DM15,LF(SE) on a standard FR4 PCB?

On a 40 mm × 40 mm FR4 board with 50% copper coverage on both sides, TCR3DM15,LF(SE) has a rated power dissipation of 420 mW. At 300 mA and 350 mV dropout, power dissipation is 105 mW - well within safe limits even at +85°C ambient. The DFN4/DFN4E package's exposed center pad, when soldered to GND, reduces junction-to-board thermal resistance significantly, preventing thermal shutdown under continuous full-load operation.

How does the auto-discharge function work in TCR3DM15,LF(SE)?

When the CONTROL pin is driven low (≤0.4 V), the TCR3DM15,LF(SE) disables regulation and activates an internal NMOS transistor between VOUT and GND, discharging the output capacitor rapidly. This ensures VOUT falls to <100 mV within 1 ms for typical 1.0 μF loads - eliminating residual voltage that could cause back-powering, latch-up, or false wake events in downstream circuitry. The TCR3DM15,LF(SE) implements this without external components, simplifying system-level power sequencing.