Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage TCR3DM18,LF

Part No.:
TCR3DM18,LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Voltage Regulators - Linear, Low Drop Out (LDO) Regulators
Package:
4-UDFN Exposed Pad
Datasheet:
AetrixTCR3DM18,LF.pdf
Description:
LDO REG IOUT: 300MA VIN: 6V VOUT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,912

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TCR3DM18,LF from Toshiba Electronic Devices & Storage Corporation is a 1.8 V fixed-output CMOS low-dropout regulator delivering up to 300 mA with 270 mV typical dropout voltage at full load, 38 μVrms output noise, and integrated inrush current protection - deployed as the primary power rail for RF transceivers and baseband processors in compact cellular handsets.

For engineers reviewing the TCR3DM18,LF datasheet, TCR3DM18,LF pinout, TCR3DM18,LF application, or TCR3DM18,LF equivalent, key selection criteria include its DFN4E (1.0 mm × 1.0 mm) ultra-small footprint, guaranteed ±1.0% output voltage accuracy at 1.8 V, auto-discharge functionality during shutdown, and compatibility with 1.0 μF ceramic input/output capacitors for high-density portable designs.

Technical Context

The TCR3DM18,LF employs a CMOS pass transistor architecture enabling low quiescent current (65 μA typ. at 1.8 V output) and stable regulation across –40°C to +85°C ambient. Its control logic accepts TTL-compatible ON/OFF signals (VCT(OFF) ≤ 0.4 V, VCT(ON) ≥ 1.0 V) and integrates an internal pull-down resistor between CONTROL and GND.

Internal protection includes thermal shutdown triggered at 150°C junction temperature, foldback overcurrent limiting, and a dedicated inrush current suppression circuit that limits peak input surge during startup - critical for battery-powered systems with limited source impedance.

Key Specifications

ParameterValue and Actual Design Meaning
Output voltageFixed 1.8 V ±1.0% - ensures stable core supply for 1.8 V I/O domains without external feedback components.
Max output current300 mA - supports moderate-power digital ICs such as Bluetooth SoCs and sensor hubs without thermal derating on standard FR4 PCBs.
Dropout voltage270 mV (typ.) at 300 mA - enables operation from 2.07 V input, compatible with single-cell Li-ion (2.7–4.2 V) and Li-polymer batteries under discharge.
Output noise38 μVrms (10 Hz–100 kHz) - minimizes phase noise coupling into RF receivers and clock-sensitive analog circuits.
Load transient response±80 mV (1 mA ↔ 300 mA step, COUT = 1.0 μF) - maintains regulation during burst-mode processor activity without requiring oversized output capacitance.
Ripple rejection70 dB (1 kHz) - suppresses switching noise from upstream DC/DC converters feeding the LDO's input rail.
Quiescent current65 μA (typ., 1.8 V output) - extends battery life in always-on sensor nodes and standby modes.

Pinout & Package

TCR3DM18,LF is housed in an ultra-compact DFN4E package (1.0 mm × 1.0 mm × 0.58 mm height), featuring a thermally enhanced exposed center pad that must be connected to GND for optimal thermal performance and EMI reduction.

Pin/TerminalCircuit RoleDesign Meaning
VINInput power supplyAccepts 1.75–5.5 V input; requires 1.0 μF ceramic capacitor placed within 2 mm of pin for stability.
VOUTRegulated outputDelivers fixed 1.8 V; connects directly to load; output capacitor must be adjacent to minimize loop inductance.
GNDGround referenceCommon return for input/output paths and internal circuitry; ties to exposed center pad for thermal conduction.
CONTROLEnable/disable controlTTL-compatible input: HIGH (≥1.0 V) enables regulation; LOW (≤0.4 V) disables output and activates auto-discharge.

Key Features

FeatureDesign Value
Inrush current protectionPrevents input voltage sag and battery stress during cold-start by limiting initial charge current into output capacitor.
Auto-discharge functionActively discharges VOUT to GND within milliseconds after CONTROL goes LOW - eliminates residual voltage that could cause latch-up in downstream logic.
Ultra-small DFN4E package1.0 mm × 1.0 mm footprint saves >70% board area vs. SOT-23 - enables placement directly beneath BGA processors in space-constrained modules.
Ceramic capacitor compatibilityStable with 1.0 μF X5R/X7R ceramics on both input and output - eliminates need for bulk tantalum or electrolytic capacitors and reduces bill-of-material cost.
Over-temperature shutdownThermal protection triggers at 150°C junction temperature and resets automatically upon cooling - prevents permanent damage during sustained overload or poor heatsinking.

Applications

Smartphone Baseband PowerWearable Sensor Hub Supply

Use Scenario: Powers ARM Cortex-M4 microcontroller and MEMS accelerometer/gyroscope cluster in fitness tracker with intermittent BLE transmission.

IC Role / Device Role / Timing Role: Primary 1.8 V LDO supplying digital core and I/O banks; enabled synchronously with MCU wake-up signal via CONTROL pin.

Use Value: 65 μA quiescent current extends battery runtime beyond 7 days; ±80 mV load transient response prevents brownout during sensor data bursts.

Use Scenario: Supplies 1.8 V rail to Bluetooth Low Energy (BLE) SoC during advertising interval and connection events.

IC Role / Device Role / Timing Role: Standby-regulated power source with auto-discharge ensuring clean reset between BLE connection states.

Use Value: Inrush protection avoids voltage droop on shared coin-cell supply; 38 μVrms noise preserves BLE receiver sensitivity (–93 dBm typical).

IoT Cellular Modem Core RailPortable Medical Diagnostic Module

Use Scenario: Delivers regulated 1.8 V to LTE-M modem baseband ASIC during data upload cycles drawing up to 280 mA peak current.

IC Role / Device Role / Timing Role: High-current LDO decoupling switching noise from buck converter feeding VIN; controlled via host MCU GPIO.

Use Value: 70 dB ripple rejection isolates RF section from DC/DC switching artifacts; 270 mV dropout allows operation down to 2.07 V input during battery sag.

Use Scenario: Powers ADC driver amplifier and low-noise op-amp front-end in handheld ECG monitor operating from rechargeable Li-ion cell.

IC Role / Device Role / Timing Role: Ultra-low-noise analog supply rail; isolated from digital sections using separate GND plane tied only at single point.

Use Value: 38 μVrms output noise contributes <0.5 LSB error in 16-bit ADC conversion; DFN4E package enables tight layout control of analog signal paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise, ultra-small LDO applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Torex XC6210B182MR-GSame 1.8 V output, 300 mA rating, but uses SOT-25 package (2.9 mm × 2.8 mm); higher 300 mV dropout at 300 mA.Larger footprint limits use in sub-10 mm² wearable modules; lacks inrush current protection circuit.Select when board space permits larger package and inrush control is handled externally.
Rohm BD3985FVM-181.8 V, 500 mA rating, DFN1212-4 package (1.2 mm × 1.2 mm); 220 mV dropout at 300 mA; no auto-discharge function.Higher current capability suits future-proofing, but absence of auto-discharge requires external discharge FET for clean shutdown.Choose when >300 mA headroom is needed and system-level discharge control is already implemented.

Compared with TCR3DM18,LF, the XC6210B182MR-G trades size for ease of soldering and lower cost, while the BD3985FVM-18 offers higher current margin at the expense of missing auto-discharge - making TCR3DM18,LF uniquely balanced for space-constrained, battery-operated systems requiring clean enable/disable behavior and minimal BOM count.

Availability

TCR3DM18,LF is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, IoT cellular modems, and portable medical diagnostics requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for TCR3DM18,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power efficiency and miniaturization.

The TCR3DM series targets portable electronics requiring ultra-small, low-noise, feature-rich LDOs - developed specifically to replace legacy SOT-23 regulators in next-generation smartphones and wearables where board area and battery life are critical constraints.

FAQ

What is the maximum input voltage rating for TCR3DM18,LF?

The TCR3DM18,LF has an absolute maximum input voltage (VIN) rating of 6.0 V. However, its recommended operating range is 1.75 V to 5.5 V per electrical characteristics testing conditions. Exceeding 5.5 V may trigger overvoltage stress not covered by specification guarantees, and operation above 6.0 V risks permanent damage. Always refer to the Absolute Maximum Ratings table in the official Toshiba datasheet for TCR3DM18,LF when designing input protection circuitry.

Does TCR3DM18,LF require an external pull-up resistor on the CONTROL pin?

No, TCR3DM18,LF does not require an external pull-up resistor on the CONTROL pin because it integrates an internal pull-down resistor between CONTROL and GND. This design ensures the device remains disabled (output off) during power-up or floating control conditions. To enable regulation, apply a logic HIGH signal ≥1.0 V to CONTROL; to disable, drive CONTROL ≤0.4 V or leave it unconnected (defaulting to GND via internal resistor). This simplifies system-level GPIO interfacing for TCR3DM18,LF.

Can TCR3DM18,LF operate with only 1.0 μF ceramic capacitors on input and output?

Yes, TCR3DM18,LF is fully stable with 1.0 μF ceramic capacitors on both VIN and VOUT pins, as confirmed in Toshiba's Electrical Characteristics table and Application Note. The device's internal compensation is optimized for low-ESR ceramics (recommended ESR <10 Ω), eliminating need for larger or higher-ESR capacitors. This enables minimal BOM count and ultra-dense layout - a key advantage of TCR3DM18,LF in space-constrained portable designs.

What thermal performance can be expected from TCR3DM18,LF on a standard FR4 PCB?

When mounted on a 40 mm × 40 mm × 1.6 mm FR4 board with 50% copper coverage on both sides, TCR3DM18,LF delivers a power dissipation rating of 420 mW at 25°C ambient. At 300 mA output and 270 mV dropout, power dissipation is ~81 mW - resulting in negligible junction temperature rise (<10°C) under typical conditions. Full thermal derating curves for TCR3DM18,LF are provided in Figure 5 of the datasheet, supporting reliable operation up to +85°C ambient.

How does the inrush current protection circuit in TCR3DM18,LF function during startup?

The inrush current protection circuit in TCR3DM18,LF actively limits the peak charging current into the output capacitor during power-up, preventing input voltage sag and excessive stress on the source battery or upstream regulator. It operates internally without external components and is active each time the CONTROL pin transitions from LOW to HIGH. This feature is especially valuable in multi-rail systems where simultaneous startup of multiple LDOs could overload the power source - a core differentiator of TCR3DM18,LF versus basic LDOs.

TCR3DM18,LF Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
4-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Output Configuration:
Positive
Output Type:
Fixed
Number of Regulators:
1
Voltage - Input (Max):
5.5V
Voltage - Output (Min/Fixed):
1.8V
Voltage - Output (Max):
-
Voltage Dropout (Max):
0.38V @ 300mA
Current - Output:
300mA
Current - Quiescent (Iq):
-
Current - Supply (Max):
-
PSRR:
-
Control Features:
Enable
Protection Features:
Over Current, Over Temperature
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
4-DFN (1x1)

TCR3DM18,LF FAQ

1.How can I place an order for TCR3DM18,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for TCR3DM18,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TCR3DM18,LF reliable?

The price and inventory of TCR3DM18,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR3DM18,LF is usually 5 days.

3.What payment methods are accepted for TCR3DM18,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR3DM18,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TCR3DM18,LF?

TCR3DM18,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TCR3DM18,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TCR3DM18,LF?

For technical support, including TCR3DM18,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR3DM18,LF requirements.

6.How does Aetrix verify that TCR3DM18,LF is sourced from the original manufacturer or authorized distributors?

All TCR3DM18,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR3DM18,LF meets industry standards.

7.What is the process for return or replacement of TCR3DM18,LF?

All TCR3DM18,LF units undergo pre-shipment inspection (PSI). If there is an issue with TCR3DM18,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TCR3DM18,LF part is unused and in its original packaging.

Return procedure for TCR3DM18,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TCR3DM18,LF Tags

  • TCR3DM18,LF
  • TCR3DM18,LF PDF
  • TCR3DM18,LF Datasheet
  • TCR3DM18,LF Specifications
  • TCR3DM18,LF Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage TCR3DM18,LF
  • Buy TCR3DM18,LF
  • TCR3DM18,LF Price
  • TCR3DM18,LF Distributor
  • TCR3DM18,LF Supplier
  • TCR3DM18,LF Wholesale
Related Products
MIC5504-1.8YM5-TR
MIC5504-1.8YM5-TR

Microchip Technology

MIC5504-3.3YM5-TR
MIC5504-3.3YM5-TR

Microchip Technology

MIC5365-3.0YC5-TR
MIC5365-3.0YC5-TR

Microchip Technology

MIC5365-1.8YC5-TR
MIC5365-1.8YC5-TR

Microchip Technology

MIC5365-2.5YC5-TR
MIC5365-2.5YC5-TR

Microchip Technology

MIC5365-3.3YC5-TR
MIC5365-3.3YC5-TR

Microchip Technology

MIC5365-3.3YD5-TR
MIC5365-3.3YD5-TR

Microchip Technology

MIC5317-3.3YM5-TR
MIC5317-3.3YM5-TR

Microchip Technology

TLV1117LV33DCYR
TLV1117LV33DCYR

Texas Instruments

MIC5317-3.3YMT-TZ
MIC5317-3.3YMT-TZ

Microchip Technology

MIC5528-3.3YMT-TR
MIC5528-3.3YMT-TR

Microchip Technology

TLV75801PDRVR
TLV75801PDRVR

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER