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Toshiba Semiconductor and Storage TCR3DM18,RF(SE
- Part No.:
- TCR3DM18,RF(SE
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package:
- 4-UDFN Exposed Pad
- Datasheet:
-
TCR3DM18,RF(SE.pdf
- Description:
- LDO REG IOUT: 300MA VIN: 6V VOUT
- Quantity:
- Payment:
- Shipping:
Inventory:2,675
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Product details
Overview
TCR3DM18,RF(SE) from Toshiba Electronic Devices & Storage Corporation is a 1.8 V fixed-output, 300 mA CMOS low-dropout regulator with inrush current protection, on/off control input, and auto-discharge function. It delivers 270 mV typical dropout at full load, 38 μVrms output noise, and ±80 mV load transient response with 1.0 μF ceramic capacitors-designed for power management in space-constrained portable electronics.
For engineers reviewing the TCR3DM18,RF(SE) datasheet, TCR3DM18,RF(SE) pinout, TCR3DM18,RF(SE) application, or TCR3DM18,RF(SE) equivalent, key selection criteria include its ultra-small DFN4E (1.0 mm × 1.0 mm) footprint, guaranteed 1.8 V ±1.0% output accuracy, 0.1 μA standby current, and compatibility with low-ESR ceramic capacitors in battery-powered mobile devices.
Technical Context
The TCR3DM18,RF(SE) integrates a CMOS pass transistor with internal inrush current limiting and an active auto-discharge circuit tied to the CONTROL pin. Its feedback loop is optimized for stability with 1.0 μF ceramic output capacitance and achieves 70 dB ripple rejection at 1 kHz.
It operates across –40°C to +85°C ambient temperature, supports input voltages from 1.75 V to 5.5 V, and features thermal shutdown and overcurrent protection triggered independently of output load conditions-enabling robust operation in dynamically loaded portable systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output voltage | Fixed 1.8 V ±1.0% - ensures stable core logic supply for 1.8 V I/O domains without external resistors |
| Max output current | 300 mA - sufficient to power multiple low-power microcontrollers or sensor subsystems |
| Dropout voltage | 270 mV typ. at 300 mA - enables regulation from 2.07 V input, extending battery runtime in single-cell Li-ion or Li-poly systems |
| Output noise | 38 μVrms (10 Hz–100 kHz) - minimizes jitter in analog/RF sections powered from same rail |
| Load transient response | ±80 mV (1 mA ⇔ 300 mA, COUT = 1.0 μF) - maintains system stability during burst-mode processor activity |
| Standby current | 0.1 μA max - preserves battery charge during deep-sleep modes in IoT endpoints |
| Ripple rejection | 70 dB at 1 kHz - suppresses switching noise from upstream DC/DC converters |
Pinout & Package
TCR3DM18,RF(SE) uses the ultra-compact DFN4E package (1.0 mm × 1.0 mm × 0.58 mm), with exposed thermal pad connected to GND for enhanced thermal performance. Weight is 1.3 mg (typ.).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIN | Input power supply | Accepts 1.75–5.5 V; requires 1.0 μF ceramic decoupling close to pin |
| VOUT | Regulated output | Delivers fixed 1.8 V; connects to 1.0 μF ceramic capacitor and load |
| GND | Ground reference | Common return path; center thermal pad must be soldered to PCB GND plane |
| CONTROL | Enable/disable input | Logic-high (≥1.0 V) enables output; logic-low (≤0.4 V) disables output and activates auto-discharge |
Key Features
| Feature | Design Value |
|---|---|
| Inrush current protection | Prevents input voltage sag and system reset during cold-start by limiting initial charge current into output capacitor |
| Auto-discharge function | Actively discharges VOUT to GND within milliseconds when CONTROL is pulled low-eliminates residual voltage that could interfere with power sequencing |
| Pull-down on CONTROL | Internal resistor ties CONTROL to GND-ensures default OFF state if pin is left floating, improving system safety |
| Ceramic capacitor compatibility | Stable operation with 1.0 μF input/output ceramics (ESR < 10 Ω)-reduces board area vs. tantalum or electrolytic alternatives |
| Low quiescent current | 65 μA typ. at 1.8 V output - maintains efficiency in always-on sensor nodes without compromising startup time |
Applications
| Smartphone Baseband Power | Wearable Sensor Hub |
|---|---|
Use Scenario: Supplying 1.8 V core voltage to application processors and memory interfaces in LTE/5G smartphones. IC Role / Device Role / Timing Role: Primary LDO for noise-sensitive digital logic rails requiring fast transient response and minimal voltage deviation. Use Value: ±80 mV load transient response prevents timing violations during CPU burst loads; 38 μVrms noise avoids clock jitter in high-speed SerDes links. | Use Scenario: Powering MEMS accelerometers, gyroscopes, and BLE radio SoCs in compact fitness trackers. IC Role / Device Role / Timing Role: Standby-optimized LDO enabling sub-μA sleep current while supporting rapid wake-up via CONTROL pin. Use Value: 0.1 μA standby current extends battery life beyond 7 days; auto-discharge ensures clean power-down before entering ultra-low-power mode. |
| Industrial IoT Edge Node | Medical Patch Monitor |
Use Scenario: Regulating 1.8 V supply for microcontroller peripherals and isolated ADCs in battery-operated condition monitoring sensors. IC Role / Device Role / Timing Role: Fault-tolerant LDO with overtemperature and overcurrent protection for unattended field deployment. Use Value: Thermal shutdown at 150°C junction temperature prevents damage during enclosure overheating; 270 mV dropout allows operation down to 2.07 V input-maximizing usable battery capacity. | Use Scenario: Providing regulated 1.8 V power to ultra-low-power ECG front-end ASICs and Bluetooth LE transceivers in disposable patient monitors. IC Role / Device Role / Timing Role: Medical-grade LDO with guaranteed output accuracy (±1.0%) and low noise for analog signal integrity. Use Value: 1.8 V ±1.0% tolerance meets IEC 60601-1 auxiliary power requirements; 38 μVrms noise prevents baseline drift in sub-mV biopotential measurements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LDO regulator applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Torex XC6210B182MR-G | Same 1.8 V output, 300 mA rating, but no inrush protection or auto-discharge; 250 mV dropout at 300 mA | Lacks controlled power sequencing-requires external discharge circuitry for clean shutdown | Choose when cost sensitivity outweighs need for integrated inrush and discharge functions |
| Rohm BD3985FVM-18 | 1.8 V, 300 mA, includes thermal shutdown and current limit, but higher 350 mV dropout and 60 μVrms noise | Less suitable for noise-critical RF/analog sections due to higher output noise | Prefer where thermal robustness is prioritized over noise performance and board space |
Compared with TCR3DM18,RF(SE), the XC6210B182MR-G omits critical power sequencing features needed for reliable embedded boot-up, while the BD3985FVM-18 trades off noise and dropout performance for marginally stronger thermal protection-making TCR3DM18,RF(SE) optimal for space- and noise-constrained portable designs requiring integrated control.
Availability
TCR3DM18,RF(SE) is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, industrial IoT edge nodes, medical patch monitors, and portable instrumentation requiring stable component supply and long-term lifecycle support.
Supply support for TCR3DM18,RF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with expertise in analog, power, and logic ICs.
The TCR3DM series targets portable electronics requiring ultra-small, low-noise, and feature-rich LDOs-specifically engineered for battery-powered devices needing inrush control, auto-discharge, and ceramic capacitor compatibility.
FAQ
What is the guaranteed output voltage accuracy of TCR3DM18,RF(SE) over temperature and load?
The TCR3DM18,RF(SE) guarantees ±1.0% output voltage accuracy across the full operating temperature range (–40°C to +85°C) and load current (1 mA to 300 mA), as specified in the Electrical Characteristics table under "Output voltage accuracy" for VOUT ≥ 1.8 V. This tolerance ensures reliable operation of 1.8 V logic interfaces without external trimming, and is validated per Toshiba's production test conditions using VIN = VOUT + 1 V and 1.0 μF ceramic capacitors.
Does TCR3DM18,RF(SE) require an external pull-down resistor on the CONTROL pin?
No, TCR3DM18,RF(SE) includes an internal pull-down resistor between CONTROL and GND, ensuring the device remains disabled by default when the CONTROL pin is left unconnected. This eliminates the need for external components in most applications and improves system-level safety during power-up or firmware initialization sequences-confirmed in the "Features" section and Pin Assignment diagram of the official datasheet.
Can TCR3DM18,RF(SE) operate with input voltage below 2.0 V?
Yes, TCR3DM18,RF(SE) supports minimum input voltage of 1.75 V (per Absolute Maximum Ratings), enabling operation with partially discharged single-cell Li-ion batteries. However, dropout voltage rises significantly below 2.07 V input (1.8 V + 270 mV), so regulation is only maintained down to ~1.85 V input at 300 mA load-verified in the Dropout Voltage vs. Output Current curves for 1.8 V output products.
What is the thermal performance of TCR3DM18,RF(SE) on a standard FR4 PCB?
When mounted on a 40 mm × 40 mm × 1.6 mm FR4 board with 50% copper coverage on both sides, TCR3DM18,RF(SE) has a maximum power dissipation rating of 420 mW (at Ta = 25°C). Its thermal shutdown triggers at 150°C junction temperature, and the DFN4E package's exposed thermal pad must be soldered to a GND plane to achieve this rating-details confirmed in the Absolute Maximum Ratings and Package Dimensions sections.
Is TCR3DM18,RF(SE) compatible with 0201-size ceramic capacitors?
Yes, TCR3DM18,RF(SE) is fully compatible with 0201-size 1.0 μF X5R/X7R ceramic capacitors on both input and output, as explicitly stated in the "Features" list and Application Note. Toshiba specifies ESR < 10 Ω for stability, which is readily met by modern 0201 ceramics-enabling ultra-dense layouts in space-constrained portable designs without compromising transient response or noise performance.
TCR3DM18,RF(SE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 4-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Positive
- Output Type:
- Fixed
- Number of Regulators:
- 1
- Voltage - Input (Max):
- 5.5V
- Voltage - Output (Min/Fixed):
- 1.8V
- Voltage - Output (Max):
- -
- Voltage Dropout (Max):
- 0.38V @ 300mA
- Current - Output:
- 300mA
- Current - Quiescent (Iq):
- -
- Current - Supply (Max):
- -
- PSRR:
- -
- Control Features:
- Enable
- Protection Features:
- Over Current, Over Temperature
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN (1x1)
TCR3DM18,RF(SE FAQ
1.How can I place an order for TCR3DM18,RF(SE through Aetrix?
Please submit a Request for Quotation (RFQ) for TCR3DM18,RF(SE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCR3DM18,RF(SE reliable?
The price and inventory of TCR3DM18,RF(SE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR3DM18,RF(SE is usually 5 days.
3.What payment methods are accepted for TCR3DM18,RF(SE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR3DM18,RF(SE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCR3DM18,RF(SE?
TCR3DM18,RF(SE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCR3DM18,RF(SE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCR3DM18,RF(SE?
For technical support, including TCR3DM18,RF(SE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR3DM18,RF(SE requirements.
6.How does Aetrix verify that TCR3DM18,RF(SE is sourced from the original manufacturer or authorized distributors?
All TCR3DM18,RF(SE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR3DM18,RF(SE meets industry standards.
7.What is the process for return or replacement of TCR3DM18,RF(SE?
All TCR3DM18,RF(SE units undergo pre-shipment inspection (PSI). If there is an issue with TCR3DM18,RF(SE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCR3DM18,RF(SE part is unused and in its original packaging.
Return procedure for TCR3DM18,RF(SE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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