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Toshiba Semiconductor and Storage TCR3DM25,LF(SE
- Part No.:
- TCR3DM25,LF(SE
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package:
- 4-UDFN Exposed Pad
- Datasheet:
-
TCR3DM25,LF(SE.pdf
- Description:
- LDO REG IOUT: 300MA VIN: 6V VOUT
- Quantity:
- Payment:
- Shipping:
Inventory:3,874
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Product details
Overview
TCR3DM25,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 2.5 V fixed-output CMOS low-dropout regulator delivering up to 300 mA with 210 mV typical dropout voltage at full load, 38 μVrms output noise, and inrush current protection - deployed in power rails for cellular phone baseband ICs and RF transceivers.
For engineers reviewing the TCR3DM25,LF(SE) datasheet, TCR3DM25,LF(SE) pinout, TCR3DM25,LF(SE) application, or TCR3DM25,LF(SE) equivalent, key selection criteria include ultra-small DFN4E (1.0 mm × 1.0 mm) footprint compatibility, ceramic capacitor support (1.0 μF input/output), fast load transient response (±80 mV), and auto-discharge functionality for system-level power sequencing.
Technical Context
The TCR3DM25,LF(SE) integrates a CMOS pass transistor with an internal error amplifier, reference voltage generator, and dedicated inrush current control circuit that limits peak input current during startup. Its feedback loop is internally compensated for stability with 1.0 μF ceramic output capacitors.
It features active over-current and over-temperature protection, plus a pull-down resistor between CONTROL and GND enabling default-off operation. The auto-discharge function rapidly discharges the output capacitor when CONTROL is pulled low, reducing residual voltage in standby mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output voltage | Fixed 2.5 V ±1.0% (ensures stable core voltage for 2.5 V logic and analog blocks) |
| Max output current | 300 mA continuous (supports high-pulse-load subsystems like GSM/UMTS PA drivers) |
| Dropout voltage | 210 mV typ. at 300 mA (enables regulation from 2.71 V input, critical for single-cell Li-ion systems) |
| Output noise | 38 μVrms (10 Hz–100 kHz) (minimizes phase noise in RF local oscillator supply paths) |
| Ripple rejection | 70 dB typ. at 1 kHz (suppresses switching noise from upstream DC/DC converters) |
| Load transient response | ±80 mV max ΔVOUT (1 mA ↔ 300 mA, COUT = 1.0 μF) (maintains voltage integrity during burst-mode processor activity) |
| Quiescent current | 68 μA typ. at 2.5 V output (extends battery life in always-on sensor or modem standby modes) |
| Standby current | 0.1 μA typ. (CONTROL = 0 V) (enables ultra-low-power deep-sleep states) |
Pinout & Package
TCR3DM25,LF(SE) uses the ultra-compact DFN4E package (1.0 mm × 1.0 mm × 0.58 mm height, 1.3 mg weight) with wettable flank terminals for automated optical inspection. The exposed center pad must be connected to GND for thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIN | Input power supply | Accepts 1.75–5.5 V; requires 1.0 μF ceramic decoupling close to pin |
| VOUT | Regulated output | Delivers 2.5 V ±1.0%; connects to load and 1.0 μF ceramic capacitor |
| GND | Ground reference | Common return for input/output circuits and thermal path via center pad |
| CONTROL | Enable/disable input | Logic-high (≥1.0 V) enables regulation; logic-low (≤0.4 V) disables output and activates auto-discharge |
Key Features
| Feature | Design Value |
|---|---|
| Inrush current protection | Internally limits peak input current during power-up to prevent input rail collapse in multi-rail portable systems |
| Auto-discharge function | Actively discharges VOUT to <100 mV within 100 μs after CONTROL deactivation, eliminating hold-up voltage in sequenced power domains |
| Ceramic capacitor compatibility | Stable with 1.0 μF X5R/X7R ceramics on both input and output - eliminates need for bulk tantalum or electrolytic caps |
| Low-noise LDO architecture | 38 μVrms noise floor enables direct powering of RF synthesizers and ADC reference supplies without additional filtering |
| Thermal shutdown + OCP | Protects against sustained overload or PCB thermal runaway; recovery is automatic after fault removal and junction cooldown |
Applications
| Cellular Baseband Power | RF Transceiver Bias |
|---|---|
|
Use Scenario: Supplying core voltage to LTE/5G baseband processors during burst-mode data transmission. IC Role / Device Role / Timing Role: Primary 2.5 V LDO delivering clean, low-noise power with fast transient response to handle 1–300 mA load steps. Use Value: Maintains <±80 mV output deviation during 1 ms load transitions, preventing digital logic errors and clock jitter in high-speed interfaces. |
Use Scenario: Providing bias voltage to RF front-end modules (FEMs) and power amplifiers in smartphone antenna arrays. IC Role / Device Role / Timing Role: Low-noise 2.5 V supply isolating sensitive RF circuitry from noisy digital supply domains. Use Value: 38 μVrms noise and 70 dB ripple rejection minimize AM-to-PM distortion and phase noise degradation in transmit chains. |
| Wearable Sensor Hub | IoT Edge Node MCU Core |
|
Use Scenario: Powering ultra-low-power inertial measurement units (IMUs) and environmental sensors in compact wearables. IC Role / Device Role / Timing Role: Always-on 2.5 V regulator with 0.1 μA standby current and auto-discharge for rapid wake/sleep cycling. Use Value: Enables sub-10 μA system sleep current by fully discharging VOUT during deep-sleep, eliminating leakage through downstream loads. |
Use Scenario: Delivering regulated 2.5 V to ARM Cortex-M microcontroller cores in battery-powered industrial IoT nodes. IC Role / Device Role / Timing Role: Main system LDO supporting dynamic voltage scaling and brown-out-free operation down to 1.75 V input. Use Value: 210 mV dropout ensures >2.5 V output even as single Li-ion cell discharges to 2.71 V, extending usable battery capacity by ~12%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-noise, ultra-small LDO applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Torex XC6216D252MR-G | 2.5 V fixed, 300 mA, 250 mV dropout (typ.), no inrush protection or auto-discharge | Lacks integrated inrush limiting and auto-discharge - requires external circuitry for safe hot-plug or sequencing | Choose if board space allows discrete discharge FET and inrush resistor, and noise spec is relaxed to 55 μVrms |
| Rohm BD3572EFJ-ME2 | 2.5 V fixed, 300 mA, 200 mV dropout (typ.), 45 μVrms noise, no inrush protection | Higher noise and missing inrush circuit limit suitability for RF-sensitive or multi-rail hot-swap designs | Prefer where thermal performance is prioritized (higher PD rating) but inrush control and ultra-low noise are non-critical |
Compared with TCR3DM25,LF(SE), the XC6216D252MR-G offers comparable size and current but lacks integrated inrush and discharge functions - increasing BOM count and layout complexity. The BD3572EFJ-ME2 delivers slightly lower dropout but higher noise and no inrush protection, making it less suitable for RF or tightly sequenced portable systems.
Availability
TCR3DM25,LF(SE) is available at Aetrix Electronics and suitable for cellular handsets, wearable health monitors, and IoT edge nodes requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for TCR3DM25,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with expertise in analog, power, and logic ICs.
The TCR3DM series targets space-constrained portable electronics, delivering ultra-small-footprint, low-noise LDOs with integrated protection features for battery-powered RF and digital subsystems.
FAQ
What is the minimum input voltage required for TCR3DM25,LF(SE) to maintain regulation at 300 mA?
The TCR3DM25,LF(SE) requires a minimum input voltage of 2.71 V to sustain 2.5 V output at 300 mA load, based on its 210 mV typical dropout voltage. This allows reliable operation across the full discharge curve of a single-cell Li-ion battery (2.7–4.2 V), maximizing usable energy before brownout.
Does TCR3DM25,LF(SE) require external components for stability?
No, the TCR3DM25,LF(SE) is internally compensated and stable with only 1.0 μF ceramic capacitors on VIN and VOUT - no ESR requirements or external compensation networks needed. Toshiba specifies X5R/X7R dielectrics with ≤10 Ω ESR for optimal transient performance.
How does the auto-discharge function operate in TCR3DM25,LF(SE)?
When the CONTROL pin is driven low (≤0.4 V), the TCR3DM25,LF(SE) activates an internal discharge FET between VOUT and GND, reducing output voltage to <100 mV within 100 μs. This eliminates residual charge that could interfere with power sequencing or cause latch-up in downstream logic.
Can TCR3DM25,LF(SE) be used with input voltages above 5.5 V?
No - the absolute maximum input voltage for TCR3DM25,LF(SE) is 6.0 V, but the recommended operating range is limited to 1.75–5.5 V per datasheet specifications. Exceeding 5.5 V risks violating safe operating area limits and may trigger overvoltage stress not covered by protection circuits.
Is the DFN4E package of TCR3DM25,LF(SE) compatible with standard reflow profiles?
Yes, the TCR3DM25,LF(SE) in DFN4E (1.0 mm × 1.0 mm) is qualified for JEDEC J-STD-020 moisture sensitivity level 1 and supports standard lead-free reflow profiles (peak 260°C). Its wettable flank design enables reliable solder joint inspection using automated optical inspection (AOI) systems.
TCR3DM25,LF(SE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 4-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Positive
- Output Type:
- Fixed
- Number of Regulators:
- 1
- Voltage - Input (Max):
- 5.5V
- Voltage - Output (Min/Fixed):
- 2.5V
- Voltage - Output (Max):
- -
- Voltage Dropout (Max):
- 0.29V @ 300mA
- Current - Output:
- 300mA
- Current - Quiescent (Iq):
- -
- Current - Supply (Max):
- -
- PSRR:
- 70dB (1kHz)
- Control Features:
- Enable
- Protection Features:
- Over Current, Over Temperature
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN (1x1)
TCR3DM25,LF(SE FAQ
1.How can I place an order for TCR3DM25,LF(SE through Aetrix?
Please submit a Request for Quotation (RFQ) for TCR3DM25,LF(SE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCR3DM25,LF(SE reliable?
The price and inventory of TCR3DM25,LF(SE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR3DM25,LF(SE is usually 5 days.
3.What payment methods are accepted for TCR3DM25,LF(SE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR3DM25,LF(SE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCR3DM25,LF(SE?
TCR3DM25,LF(SE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCR3DM25,LF(SE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCR3DM25,LF(SE?
For technical support, including TCR3DM25,LF(SE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR3DM25,LF(SE requirements.
6.How does Aetrix verify that TCR3DM25,LF(SE is sourced from the original manufacturer or authorized distributors?
All TCR3DM25,LF(SE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR3DM25,LF(SE meets industry standards.
7.What is the process for return or replacement of TCR3DM25,LF(SE?
All TCR3DM25,LF(SE units undergo pre-shipment inspection (PSI). If there is an issue with TCR3DM25,LF(SE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCR3DM25,LF(SE part is unused and in its original packaging.
Return procedure for TCR3DM25,LF(SE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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