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Toshiba Semiconductor and Storage TCR3DM285,LF(SE
- Part No.:
- TCR3DM285,LF(SE
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package:
- 4-UDFN Exposed Pad
- Datasheet:
-
TCR3DM285,LF(SE.pdf
- Description:
- LDO REG IOUT: 300MA VIN: 6V VOUT
- Quantity:
- Payment:
- Shipping:
Inventory:10,000
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Product details
Overview
TCR3DM285,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 2.85 V fixed-output CMOS low-dropout regulator delivering up to 300 mA with 200 mV typical dropout (at 300 mA), 38 μVrms output noise, and inrush current protection - deployed as a primary power rail for RF transceivers and baseband ICs in cellular handsets.
For engineers reviewing the TCR3DM285,LF(SE) datasheet, TCR3DM285,LF(SE) pinout, TCR3DM285,LF(SE) application, or TCR3DM285,LF(SE) equivalent, key selection criteria include guaranteed 2.85 V ±1.0% accuracy across temperature, ultra-small DFN4E (1.0 mm × 1.0 mm) footprint compatibility with 1.0 μF ceramic input/output capacitors, and fast load transient response (±80 mV) under dynamic current steps.
Technical Context
The TCR3DM285,LF(SE) integrates a CMOS pass transistor with internal feedback loop compensation optimized for stability with 1.0 μF ceramic output capacitance. Its control logic accepts TTL-compatible ON/OFF signals (VCT(OFF) ≤ 0.4 V, VCT(ON) ≥ 1.0 V) and activates auto-discharge when disabled.
It implements three independent protection mechanisms: thermal shutdown at 150°C junction temperature, foldback overcurrent limiting, and dedicated inrush current suppression circuitry that limits peak input current during startup - all operating without external components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output voltage | Fixed 2.85 V ±1.0% (guaranteed over -40°C to +85°C) |
| Max output current | 300 mA continuous - supports single-core application processors and PMIC subsystems |
| Dropout voltage | 200 mV typ. at 300 mA - enables operation from 3.05 V input (e.g., single Li-ion cell post-boost) |
| Output noise | 38 μVrms (10 Hz–100 kHz) - meets RF IC power supply spectral purity requirements |
| Load transient response | ±80 mV deviation (1 mA ↔ 300 mA step, 1.0 μF COUT) - maintains stable bias for high-speed ADCs/DACs |
| Ripple rejection | 70 dB typ. at 1 kHz - suppresses switching noise from upstream DC/DC converters |
| Quiescent current | 68 μA typ. at 2.85 V - extends battery life in always-on sensor nodes |
| Standby current | 0.1 μA typ. - enables deep-sleep modes in portable IoT devices |
Pinout & Package
TCR3DM285,LF(SE) uses the DFN4E package (1.0 mm × 1.0 mm × 0.58 mm height), with exposed thermal pad connected to GND for enhanced thermal performance. The 4-pin configuration supports minimal PCB real estate and high-density layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIN | Input power supply | Accepts 1.75–5.5 V; requires 1.0 μF ceramic capacitor placed adjacent to pin |
| VOUT | Regulated output | Delivers stable 2.85 V; connects directly to load with 1.0 μF ceramic capacitor |
| GND | Ground reference | Common return path for VIN, VOUT, CONTROL; must connect to exposed thermal pad |
| CONTROL | Enable/disable input | TTL-compatible: HIGH ≥1.0 V enables regulator; LOW ≤0.4 V disables with auto-discharge |
Key Features
| Feature | Design Value |
|---|---|
| Inrush current protection | Hardware-limited startup surge - eliminates need for external soft-start circuitry in battery-powered designs |
| Auto-discharge function | Actively discharges VOUT via internal switch when CONTROL = LOW - prevents residual voltage hold-up in power sequencing |
| Ultra-low noise regulation | 38 μVrms output noise - avoids phase noise degradation in local oscillator supplies |
| Thermal and overcurrent protection | Integrated foldback current limit and 150°C thermal shutdown - sustains reliability without external monitoring |
| Ceramic capacitor compatibility | Stable with 1.0 μF input/output ceramics (ESR < 10 Ω) - reduces BOM count and board area vs. tantalum alternatives |
| Pull-down on CONTROL | Internal resistor to GND - ensures default OFF state during power-up or floating control lines |
Applications
| Smartphone Baseband Power | Wearable Sensor Hub Supply |
|---|---|
|
Use Scenario: Powers ARM Cortex-M4 microcontroller and integrated analog front-end in compact fitness trackers. IC Role / Device Role / Timing Role: Primary 2.85 V LDO supplying core logic and ADC reference rails. Use Value: 68 μA quiescent current extends battery runtime beyond 7 days; ±80 mV load transient response prevents digital glitches during motion-sensing bursts. |
Use Scenario: Supplies BLE SoC (e.g., nRF52840) RF and digital domains in hearables with space-constrained PCBs. IC Role / Device Role / Timing Role: Dual-rail LDO providing clean 2.85 V for RF transceiver and 1.8 V (via second LDO) for core logic. Use Value: DFN4E footprint (1.0 mm²) enables placement within 2 mm of antenna; 70 dB ripple rejection isolates RF section from noisy DC/DC converter. |
| Industrial IoT Edge Node | Automotive Cabin Camera Module |
|
Use Scenario: Powers ultra-low-power MCU and environmental sensors (temperature/humidity/pressure) in battery-operated gateways. IC Role / Device Role / Timing Role: Always-on 2.85 V regulator maintaining RTC and wake-up circuitry during deep sleep. Use Value: 0.1 μA standby current enables >10-year battery life; -40°C to +85°C operation supports outdoor deployment. |
Use Scenario: Supplies image signal processor (ISP) and CIS interface in AEC-Q200-compliant rear-view camera modules. IC Role / Device Role / Timing Role: Secondary LDO generating 2.85 V for ISP I/O and memory interface from 5 V main rail. Use Value: 200 mV dropout allows operation during cold-crank (input down to 3.05 V); inrush protection prevents bus voltage sag during camera power-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-noise, low-dropout regulator applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Torex XC6210B285MR-G | 2.85 V output, 200 mA max, 150 mV dropout, no inrush protection or auto-discharge | Lacks inrush current limiting and active discharge - requires external circuitry for safe power sequencing | Select when cost sensitivity outweighs need for integrated protection features and higher current capability is unnecessary |
| Rohm BD3572FP-E2 | 2.85 V output, 300 mA max, 250 mV dropout, 45 μVrms noise, no inrush circuit | Higher noise and no inrush suppression - unsuitable for RF-sensitive applications requiring clean startup | Choose only if board-level soft-start and discharge circuits are already implemented and thermal margin permits higher dropout |
Compared with TCR3DM285,LF(SE), XC6210B285MR-G trades integrated inrush/auto-discharge for lower unit cost but requires additional components for robust power sequencing, while BD3572FP-E2 offers similar current rating but compromises noise performance and lacks hardware inrush control - making TCR3DM285,LF(SE) the optimal choice for space-constrained, RF-critical, and battery-sensitive designs.
Availability
TCR3DM285,LF(SE) is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, and industrial IoT edge nodes requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for TCR3DM285,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power efficiency and miniaturization.
The TCR3DM series targets portable electronics requiring ultra-small, low-noise, protected LDOs - specifically engineered for high-density mobile and wearable applications where board space, battery life, and RF integrity are critical.
FAQ
What is the guaranteed output voltage tolerance for TCR3DM285,LF(SE) over temperature?
The TCR3DM285,LF(SE) guarantees ±1.0% output voltage accuracy across the full operating temperature range of -40°C to +85°C, verified per Electrical Characteristics table (page 4 of datasheet). This tolerance applies specifically to the 2.85 V output variant and ensures stable biasing for precision analog circuits without external trimming. TCR3DM285,LF(SE) achieves this using laser-trimmed internal resistive feedback network and temperature-compensated bandgap reference.
Does TCR3DM285,LF(SE) require an external pull-up resistor on the CONTROL pin?
No, TCR3DM285,LF(SE) integrates an internal pull-down resistor between CONTROL and GND, ensuring default OFF state during power-up or unconnected control lines. This eliminates need for external components and simplifies system-level power sequencing design. TCR3DM285,LF(SE) activates only when CONTROL voltage exceeds 1.0 V (typ.) and deactivates when pulled below 0.4 V (typ.), with auto-discharge engaging immediately upon disable.
Can TCR3DM285,LF(SE) operate with a 1.0 μF ceramic capacitor on both input and output?
Yes, TCR3DM285,LF(SE) is fully stable with 1.0 μF X5R/X7R ceramic capacitors on both VIN and VOUT pins, as confirmed in Application Note (page 5) and Absolute Maximum Ratings. Toshiba specifies ESR < 10 Ω for optimal phase margin; standard 0402/0603 ceramics meet this requirement. Using these small-case ceramics enables TCR3DM285,LF(SE) to fit within 1.0 mm² footprint constraints typical of modern mobile PCBs.
What thermal derating applies to TCR3DM285,LF(SE) at 85°C ambient?
At 85°C ambient, TCR3DM285,LF(SE) power dissipation must be limited to approximately 200 mW (per Figure on page 5), corresponding to ~250 mA output current at 2.85 V (assuming 3.5 V input). This derating follows the measured thermal resistance curve on glass-epoxy FR4 board (40 mm × 40 mm, 50% copper coverage). TCR3DM285,LF(SE) incorporates thermal shutdown at 150°C junction temperature to prevent permanent damage under overload conditions.
How does the inrush current protection circuit in TCR3DM285,LF(SE) function during startup?
The TCR3DM285,LF(SE) inrush current protection circuit actively limits peak input current during initial power application by controlling gate slew rate of the internal CMOS pass transistor. This prevents large input voltage droop and avoids triggering upstream supply brownout detectors - critical in multi-rail battery systems. Unlike external RC soft-start, this feature is fully integrated and requires no external components. TCR3DM285,LF(SE) achieves controlled startup without compromising final regulation accuracy or transient response.
TCR3DM285,LF(SE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 4-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Positive
- Output Type:
- Fixed
- Number of Regulators:
- 1
- Voltage - Input (Max):
- 5.5V
- Voltage - Output (Min/Fixed):
- 2.85V
- Voltage - Output (Max):
- -
- Voltage Dropout (Max):
- 0.25V @ 300mA
- Current - Output:
- 300mA
- Current - Quiescent (Iq):
- -
- Current - Supply (Max):
- -
- PSRR:
- -
- Control Features:
- Enable
- Protection Features:
- Over Current, Over Temperature
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN (1x1)
TCR3DM285,LF(SE FAQ
1.How can I place an order for TCR3DM285,LF(SE through Aetrix?
Please submit a Request for Quotation (RFQ) for TCR3DM285,LF(SE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCR3DM285,LF(SE reliable?
The price and inventory of TCR3DM285,LF(SE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR3DM285,LF(SE is usually 5 days.
3.What payment methods are accepted for TCR3DM285,LF(SE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR3DM285,LF(SE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCR3DM285,LF(SE?
TCR3DM285,LF(SE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCR3DM285,LF(SE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCR3DM285,LF(SE?
For technical support, including TCR3DM285,LF(SE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR3DM285,LF(SE requirements.
6.How does Aetrix verify that TCR3DM285,LF(SE is sourced from the original manufacturer or authorized distributors?
All TCR3DM285,LF(SE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR3DM285,LF(SE meets industry standards.
7.What is the process for return or replacement of TCR3DM285,LF(SE?
All TCR3DM285,LF(SE units undergo pre-shipment inspection (PSI). If there is an issue with TCR3DM285,LF(SE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCR3DM285,LF(SE part is unused and in its original packaging.
Return procedure for TCR3DM285,LF(SE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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