Toshiba Semiconductor and Storage TCR3DM28,LF(SE

Overview

TCR3DM28,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 2.8 V fixed-output, 300 mA CMOS low-dropout regulator with inrush current protection, auto-discharge, and on/off control input. It delivers 210 mV typical dropout at full load, 38 μVrms output noise, and ±80 mV load transient response with 1.0 μF ceramic capacitors-designed for power management in space-constrained portable electronics.

For engineers reviewing the TCR3DM28,LF(SE) datasheet, TCR3DM28,LF(SE) pinout, TCR3DM28,LF(SE) application, or TCR3DM28,LF(SE) equivalent, key selection criteria include dropout voltage at 300 mA, inrush current suppression behavior, thermal shutdown threshold, control logic compatibility (1.0–5.5 V ON range), and DFN4E package layout constraints for high-density PCBs.

Technical Context

The TCR3DM28,LF(SE) employs a CMOS pass transistor architecture enabling ultra-low quiescent current (68 μA typ. at 2.8 V output) and stable regulation under fast load transients. Its integrated inrush current protection circuit limits input surge during power-up without external components, while the auto-discharge function actively discharges the output capacitor when disabled via the CONTROL pin.

It operates across –40°C to +85°C with over-current and over-temperature protection, and achieves 70 dB ripple rejection at 1 kHz. The device requires only 1.0 μF ceramic input and output capacitors, leveraging internal compensation optimized for low-ESR ceramics (recommended ESR < 10 Ω).

Key Specifications

Pinout & Package

TCR3DM28,LF(SE) is housed in an ultra-small DFN4E package (1.0 mm × 1.0 mm × 0.58 mm, 1.3 mg), with exposed thermal pad (center electrode) recommended to be connected to GND for optimal thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR3DM28,LF(SE), the XC6219B282MR-G offers identical output and current rating but lacks integrated inrush and discharge functions-increasing BOM count and layout complexity. The BD3572EFJ-ME2 provides similar thermal protection but higher quiescent draw and no discharge capability, making TCR3DM28,LF(SE) superior for battery-constrained, fast-cycle applications requiring clean power sequencing.

Availability

TCR3DM28,LF(SE) is available at Aetrix Electronics and suitable for smartphone baseband power, wearable sensor hubs, medical patch monitors, industrial wireless nodes, and portable instrumentation requiring stable component supply with tight parametric consistency and long-term lifecycle support.

Supply support for TCR3DM28,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power efficiency and miniaturization.

The TCR3DM series targets portable and space-constrained applications needing ultra-small-footprint, low-noise, feature-integrated LDOs-specifically addressing challenges in battery-powered devices requiring inrush control, fast shutdown, and minimal external components.

FAQ

What is the maximum input voltage rating for TCR3DM28,LF(SE)?

The absolute maximum input voltage for TCR3DM28,LF(SE) is 6.0 V. However, the recommended operating input voltage range is 1.75 V to 5.5 V under normal conditions. Exceeding 5.5 V may trigger overvoltage stress not covered by standard reliability testing, and operation above 6.0 V risks permanent damage. Always maintain VIN within specification to ensure TCR3DM28,LF(SE) meets its rated dropout, noise, and thermal performance.

Does TCR3DM28,LF(SE) require external components for stability?

No, TCR3DM28,LF(SE) is internally compensated and stable with only 1.0 μF ceramic capacitors on both VIN and VOUT pins. Toshiba specifies ESR < 10 Ω for optimal phase margin and transient response. No external resistors, capacitors, or feedback networks are needed-making TCR3DM28,LF(SE) a true plug-and-play solution for compact layouts where board area is constrained.

How does the inrush current protection circuit operate in TCR3DM28,LF(SE)?

The inrush current protection circuit in TCR3DM28,LF(SE) limits peak input current during initial power-up by controlling the gate drive slew rate of the internal CMOS pass transistor. This prevents large input voltage droop and avoids triggering upstream supply undervoltage lockout-critical when powered from weak sources like coin cells or aging batteries. The function is fully integrated and requires no external configuration or enable timing.

What is the thermal shutdown threshold for TCR3DM28,LF(SE)?

TCR3DM28,LF(SE) activates thermal shutdown at a junction temperature of approximately 150°C, as defined in its Absolute Maximum Ratings. Once triggered, the device halts regulation and enters safe-off state until junction temperature falls below the hysteresis threshold (~20°C below trip point). This protection is internal and automatic-no external monitoring or intervention is required to safeguard TCR3DM28,LF(SE) under sustained overload or poor heatsinking conditions.

Can TCR3DM28,LF(SE) be used with ceramic capacitors having ESR below 1 Ω?

Yes, TCR3DM28,LF(SE) is specifically designed for low-ESR ceramic capacitors, including those with ESR well below 1 Ω. Toshiba recommends ESR < 10 Ω, and typical X5R/X7R 1.0 μF ceramics (ESR ≈ 0.03–0.1 Ω) are fully compatible. Using ultra-low-ESR types does not compromise stability-TCR3DM28,LF(SE)'s internal compensation accounts for this range, ensuring robust phase margin and maintaining its specified ±80 mV load transient response.