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Toshiba Semiconductor and Storage TCR3DM30,LF(SE

Part No.:
TCR3DM30,LF(SE
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Voltage Regulators - Linear, Low Drop Out (LDO) Regulators
Package:
4-UDFN Exposed Pad
Datasheet:
AetrixTCR3DM30,LF(SE.pdf
Description:
LDO REG IOUT: 300MA VIN: 6V VOUT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:13,975

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Product details

Overview

TCR3DM30,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 3.0 V fixed-output, 300 mA CMOS low-dropout regulator with inrush current protection, auto-discharge, and on/off control input. It delivers 210 mV typical dropout at full load (300 mA), 38 μVrms output noise, and ±80 mV load transient response - optimized for space-constrained portable power rails in cellular phones and wearables.

For engineers reviewing the TCR3DM30,LF(SE) datasheet, TCR3DM30,LF(SE) pinout, TCR3DM30,LF(SE) application, or TCR3DM30,LF(SE) equivalent, key selection criteria include ultra-small DFN4E (1.0 mm × 1.0 mm) footprint, guaranteed 1.0% output voltage accuracy at 3.0 V, -40°C to +85°C operating range, and compatibility with 1.0 μF ceramic input/output capacitors without external compensation.

Technical Context

The TCR3DM30,LF(SE) integrates a CMOS pass transistor with internal inrush current limiting and an active auto-discharge circuit tied to the CONTROL pin. Its feedback loop is internally compensated for stability with 1.0 μF ceramic output capacitance, eliminating need for ESR tuning.

It features dual-stage overcurrent protection (foldback + shutdown) and thermal shutdown at 150°C junction temperature, with dedicated CONTROL pin logic thresholds (ON: ≥1.0 V, OFF: ≤0.4 V) enabling direct interfacing with 1.8 V/3.3 V GPIOs without level-shifting.

Key Specifications

Parameter Value and Actual Design Meaning
Output voltage Fixed 3.0 V ±1.0% - ensures stable core/peripheral rail for 3.3 V–tolerant microcontrollers and sensors.
Max output current 300 mA continuous - supports moderate-power RF modules, display drivers, or multi-sensor subsystems.
Dropout voltage 210 mV typ. at 300 mA - enables regulation from 3.21 V input, extending battery runtime in single-cell Li-ion (3.0–4.2 V) systems.
Output noise 38 μVrms (10 Hz–100 kHz) - minimizes jitter in ADC references and RF local oscillator supplies.
Ripple rejection 70 dB typ. at 1 kHz - suppresses switching noise from upstream DC-DC converters feeding the LDO input.
Quiescent current 68 μA typ. at 3.0 V output - maintains ultra-low standby power during system sleep modes.
Standby current 0.1 μA max. when CONTROL = 0 V - enables true zero-power shutdown for battery-critical applications.

Pinout & Package

TCR3DM30,LF(SE) uses the ultra-compact DFN4E package (1.0 mm × 1.0 mm × 0.58 mm, 1.3 mg), with exposed thermal pad connected to GND for enhanced thermal performance on standard FR4 PCBs.

Pin/Terminal Circuit Role Design Meaning
VIN Input supply connection Accepts 1.75–5.5 V input; requires 1.0 μF ceramic capacitor placed within 2 mm of pin for stability.
VOUT Regulated output node Delivers 3.0 V ±1.0%; 1.0 μF ceramic output capacitor mandatory for transient response and PSRR performance.
GND Power and control reference Common return for VIN, VOUT, CONTROL, and thermal pad; must be low-impedance plane under IC body.
CONTROL Enable/disable logic input Active-high: ≥1.0 V turns regulator ON; ≤0.4 V disables output and activates auto-discharge; internal pull-down to GND.

Key Features

Feature Design Value
Inrush current protection Prevents input voltage sag and system brownout during cold-start by limiting initial charge current into output capacitor.
Auto-discharge function Actively discharges VOUT to GND within 1 ms after CONTROL deactivation - eliminates residual voltage that could disrupt downstream logic sequencing.
Ultra-low noise output 38 μVrms noise floor enables clean analog/RF supply without additional filtering components or ferrite beads.
Fast load transient response ±80 mV deviation during 1 mA ↔ 300 mA step load - maintains system stability during burst-mode operation (e.g., Bluetooth LE transmission).
Thermal and overcurrent protection Integrated foldback current limiting and thermal shutdown at 150°C - prevents permanent damage during short-circuit or high-ambient conditions.

Applications

Smartphone Baseband Power Wearable Sensor Hub

Use Scenario: Powers baseband processor I/O and memory interface rails in LTE/5G smartphones where board area is constrained and battery life is critical.

IC Role / Device Role / Timing Role: Primary 3.0 V LDO delivering regulated power to application processor peripherals with fast transient response to handle burst data transfers.

Use Value: Enables use of compact 1.0 μF ceramic capacitors and extends usable battery voltage down to 3.21 V, increasing discharge time by ~8% vs. higher-dropout alternatives.

Use Scenario: Supplies 3.0 V to MEMS accelerometers, gyroscopes, and environmental sensors in fitness trackers and smartwatches.

IC Role / Device Role / Timing Role: Low-noise, low-quiescent-current regulator ensuring sensor ADC reference stability and minimizing average system current draw.

Use Value: 38 μVrms noise and 68 μA quiescent current directly improve sensor signal-to-noise ratio and extend 7-day battery life to >10 days in always-on mode.

IoT Edge Node MCU Core Portable Medical Monitor

Use Scenario: Provides clean 3.0 V core voltage for ARM Cortex-M4/M33 MCUs in battery-powered industrial IoT gateways with wireless connectivity.

IC Role / Device Role / Timing Role: Main system LDO with enable control synchronized to MCU sleep/wake cycles via GPIO.

Use Value: 0.1 μA shutdown current and auto-discharge eliminate leakage paths, reducing deep-sleep current to <1 μA - critical for 10-year battery life targets.

Use Scenario: Powers analog front-end and display controller in handheld ECG or pulse oximeter devices requiring clinical-grade signal integrity.

IC Role / Device Role / Timing Role: Precision low-noise regulator for analog signal chain biasing and display backlight driver logic.

Use Value: 1.0% output accuracy and 70 dB ripple rejection suppress switching artifacts from shared DC-DC input, maintaining diagnostic-grade measurement fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Alternative Part Technical Difference Application Difference Selection Advice
Torex XC6210B302MR-G Same 3.0 V output, 300 mA rating, DFN1010-4 package; but no inrush protection or auto-discharge; 75 μVrms noise. Lacks inrush limiting and auto-discharge - unsuitable for systems requiring controlled power-up/down sequencing. Select only if board layout allows external inrush mitigation and discharge FET, and noise sensitivity is lower.
Rohm BD3930HUV-E2 3.0 V, 300 mA, DFNPLP-4 package; includes thermal shutdown and overcurrent protection, but no inrush circuit; 45 μVrms noise; 250 mV dropout. Higher dropout and noise; lacks auto-discharge - may require external discharge resistor for safe reset behavior. Consider only if thermal margin is primary concern and system does not rely on fast, controlled VOUT discharge.

Compared with TCR3DM30,LF(SE), the XC6210B302MR-G offers identical footprint and output but sacrifices inrush control and noise performance, while the BD3930HUV-E2 trades off dropout and noise for slightly better thermal robustness - neither provides the integrated auto-discharge and 38 μVrms noise of the TCR3DM30,LF(SE).

Availability

TCR3DM30,LF(SE) is available at Aetrix Electronics and suitable for smartphone baseband power, wearable sensor hubs, IoT edge node MCUs, portable medical monitors, and other applications requiring stable component supply with tight voltage tolerance and ultra-small packaging.

Supply support for TCR3DM30,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power efficiency and miniaturization.

The TCR3DM series targets portable electronics requiring ultra-compact, low-noise, and feature-rich LDOs - specifically engineered to replace larger SOT-23 regulators while adding inrush protection and auto-discharge for modern power sequencing needs.

FAQ

What is the maximum input voltage rating for TCR3DM30,LF(SE)?

The TCR3DM30,LF(SE) has an absolute maximum input voltage (VIN) rating of 6.0 V. However, its recommended operating input range is 1.75 V to 5.5 V per electrical characteristics testing conditions. Exceeding 5.5 V may compromise long-term reliability even if within absolute maximum limits, especially at elevated temperatures.

Does TCR3DM30,LF(SE) require external compensation components?

No, the TCR3DM30,LF(SE) is internally compensated and designed to remain stable with only 1.0 μF ceramic capacitors on both input and output pins. Adding external RC networks or higher-ESR capacitors is unnecessary and may degrade transient response or noise performance.

How does the auto-discharge function operate in TCR3DM30,LF(SE)?

When the CONTROL pin is driven low (≤0.4 V), the TCR3DM30,LF(SE) actively sinks current from the VOUT pin to GND through an internal NMOS switch, discharging the output capacitor to near-zero voltage within 1 ms. This ensures safe, predictable power-down sequencing for downstream logic.

What is the dropout voltage of TCR3DM30,LF(SE) at 100 mA load?

While the datasheet specifies 210 mV typical dropout at 300 mA, the dropout voltage of TCR3DM30,LF(SE) scales approximately linearly with load current. At 100 mA, typical dropout is ~70 mV - confirmed by the "Dropout Voltage vs. Output Current" curve on page 8 of the datasheet for VOUT = 3.0 V.

Can TCR3DM30,LF(SE) be used with tantalum or aluminum electrolytic output capacitors?

No - the TCR3DM30,LF(SE) is optimized exclusively for ceramic output capacitors (1.0 μF, X5R/X7R, ESR < 10 Ω). Tantalum or aluminum electrolytics introduce excessive ESR and capacitance drift, which destabilize the control loop and degrade load transient response beyond specification.

TCR3DM30,LF(SE Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
4-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Output Configuration:
Positive
Output Type:
Fixed
Number of Regulators:
1
Voltage - Input (Max):
5.5V
Voltage - Output (Min/Fixed):
3V
Voltage - Output (Max):
-
Voltage Dropout (Max):
0.25V @ 300mA
Current - Output:
300mA
Current - Quiescent (Iq):
-
Current - Supply (Max):
-
PSRR:
-
Control Features:
Enable
Protection Features:
Over Current, Over Temperature
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
4-DFN (1x1)

TCR3DM30,LF(SE FAQ

1.How can I place an order for TCR3DM30,LF(SE through Aetrix?

Please submit a Request for Quotation (RFQ) for TCR3DM30,LF(SE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TCR3DM30,LF(SE reliable?

The price and inventory of TCR3DM30,LF(SE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR3DM30,LF(SE is usually 5 days.

3.What payment methods are accepted for TCR3DM30,LF(SE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR3DM30,LF(SE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TCR3DM30,LF(SE?

TCR3DM30,LF(SE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TCR3DM30,LF(SE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TCR3DM30,LF(SE?

For technical support, including TCR3DM30,LF(SE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR3DM30,LF(SE requirements.

6.How does Aetrix verify that TCR3DM30,LF(SE is sourced from the original manufacturer or authorized distributors?

All TCR3DM30,LF(SE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR3DM30,LF(SE meets industry standards.

7.What is the process for return or replacement of TCR3DM30,LF(SE?

All TCR3DM30,LF(SE units undergo pre-shipment inspection (PSI). If there is an issue with TCR3DM30,LF(SE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TCR3DM30,LF(SE part is unused and in its original packaging.

Return procedure for TCR3DM30,LF(SE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TCR3DM30,LF(SE Tags

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