Toshiba Semiconductor and Storage TCR3DM32,LF(SE

Overview

TCR3DM32,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 3.2 V fixed-output CMOS low-dropout regulator delivering up to 300 mA with 180–230 mV typical dropout (3.2 V output), 38 μV_rms output noise, and inrush current protection - used for powering RF transceivers and baseband ICs in compact mobile devices.

For engineers reviewing the TCR3DM32,LF(SE) datasheet, TCR3DM32,LF(SE) pinout, TCR3DM32,LF(SE) application, or TCR3DM32,LF(SE) equivalent, key selection criteria include ultra-small DFN4E package compatibility, auto-discharge functionality during shutdown, ±80 mV load transient response with 1.0 μF ceramic output capacitor, and guaranteed 1.0% output voltage accuracy at 3.2 V.

Technical Context

The TCR3DM32,LF(SE) integrates a CMOS pass transistor with internal inrush current limiting and an active auto-discharge circuit tied to the CONTROL pin. Its control logic accepts 0–0.4 V for OFF and 1.0–5.5 V for ON states, enabling precise power sequencing in multi-rail systems.

Designed for high-density portable applications, it operates across –40°C to +85°C with thermal shutdown and overcurrent protection, and achieves 70 dB ripple rejection at 1 kHz while supporting ceramic input/output capacitors as small as 1.0 μF each.

Key Specifications

Pinout & Package

TCR3DM32,LF(SE) uses the ultra-compact DFN4E package (1.0 mm × 1.0 mm × 0.58 mm, 1.3 mg), with exposed center thermal pad that must be connected to GND for optimal thermal performance and EMI suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise, ultra-small LDO applications.

Compared with XC6210B322MR-G and BD3572EFJ-ME2, TCR3DM32,LF(SE) uniquely combines DFN4E's 1.0 mm² footprint, guaranteed 180–230 mV dropout at full 300 mA, and integrated inrush/auto-discharge - making it optimal for high-transient, space-limited mobile power rails where reliability and sequencing control are mandatory.

Availability

TCR3DM32,LF(SE) is available at Aetrix Electronics and suitable for smartphone baseband power, wearable sensor hubs, IoT edge node PMIC cores, and compact camera module bias requiring stable component supply across high-volume production cycles.

Supply support for TCR3DM32,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on miniaturization, efficiency, and integration.

The TCR3DM series targets portable electronics power management, specifically engineered to replace legacy SOT-23 LDOs with ultra-compact DFN4E packaging, inrush control, and auto-discharge for modern battery-powered SoC subsystems.

FAQ

What is the maximum input voltage rating for TCR3DM32,LF(SE)?

The absolute maximum input voltage for TCR3DM32,LF(SE) is 6.0 V. Operation above this level risks permanent damage. The recommended operating input range is 1.75 V to 5.5 V, ensuring proper regulation across the full 300 mA load and temperature range. For battery-powered designs, this allows direct connection to single-cell Li-ion (4.2 V max) or dual-cell alkaline (3.0 V nominal) sources without pre-regulation.

Does TCR3DM32,LF(SE) require an external resistor on the CONTROL pin?

No, TCR3DM32,LF(SE) includes an internal pull-down resistor between CONTROL and GND, ensuring a defined OFF state during power-up or MCU reset. An external resistor is unnecessary unless specific logic-level translation or noise immunity is required - for example, driving CONTROL from a 1.8 V GPIO with long traces may benefit from a 10 kΩ series resistor to limit ESD current.

Can TCR3DM32,LF(SE) be used with 0402-size ceramic capacitors?

Yes, TCR3DM32,LF(SE) is fully compatible with 0402 (1005 metric) 1.0 μF X5R/X7R MLCCs on both input and output. The device's internal compensation and low ESR tolerance eliminate the need for larger case sizes. However, ensure the capacitor's DC bias derating maintains ≥0.8 μF effective capacitance at rated voltage to preserve ±80 mV transient response.

What thermal performance can be expected from TCR3DM32,LF(SE) on a standard FR4 PCB?

When mounted on a 40 mm × 40 mm FR4 board with 50% copper coverage on both sides, TCR3DM32,LF(SE) delivers 420 mW power dissipation capability. At 300 mA load and 3.2 V output with 4.0 V input (0.8 V drop), power dissipation is 240 mW - resulting in ~35°C junction-to-ambient rise, well within the –40°C to +85°C operating range without forced airflow.

How does the auto-discharge function behave during CONTROL pin deactivation?

When the CONTROL pin transitions from HIGH to LOW, TCR3DM32,LF(SE) immediately disables the pass transistor and activates an internal discharge FET between VOUT and GND. This discharges a 1.0 μF output capacitor from 3.2 V to <0.1 V in under 10 ms, preventing back-powering of upstream circuits and ensuring deterministic power-down sequencing in multi-rail systems.