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Toshiba Semiconductor and Storage TCR3DM33,RF
- Part No.:
- TCR3DM33,RF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package:
- 4-UDFN Exposed Pad
- Datasheet:
-
TCR3DM33,RF.pdf
- Description:
- LDO REG IOUT: 300MA VIN: 6V VOUT
- Quantity:
- Payment:
- Shipping:
Inventory:7,470
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Product details
Overview
TCR3DM33,RF from Toshiba Electronic Devices & Storage Corporation is a 3.3 V fixed-output CMOS low-dropout regulator delivering up to 300 mA with 180 mV typical dropout (IOUT = 300 mA), 38 μVrms output noise, and inrush current protection - deployed in power rails for cellular phone baseband ICs and RF front-end modules.
For engineers reviewing the TCR3DM33,RF datasheet, TCR3DM33,RF pinout, TCR3DM33,RF application, or TCR3DM33,RF equivalent, key selection criteria include dropout voltage at full load, load transient response (±80 mV), ceramic capacitor compatibility (CIN/COUT = 1.0 μF), auto-discharge function, and DFN4E package thermal performance under 85°C ambient operation.
Technical Context
The TCR3DM33,RF integrates a CMOS pass transistor with internal inrush current limiting and an active auto-discharge circuit tied to the CONTROL pin. Its feedback loop is optimized for stability with 1.0 μF ceramic capacitors on both input and output.
It features over-current and over-temperature protection with thermal shutdown latching, plus a dedicated CONTROL pin that enables ON/OFF sequencing with 0.4 V maximum OFF threshold and 1.0 V minimum ON threshold - supporting system-level power management in multi-rail portable devices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output voltage | Fixed 3.3 V ±1.0% (ensures stable core voltage for 3.3 V logic and RF ICs) |
| Max output current | 300 mA continuous (supports high-pulse current loads like GSM/GPRS transmitters) |
| Dropout voltage | 180 mV typ. at 300 mA (enables operation down to VIN = 3.48 V, extending battery runtime) |
| Output noise | 38 μVrms (10 Hz–100 kHz) (minimizes phase noise in RF synthesizers and ADC reference supplies) |
| Load transient response | ±80 mV max (1 mA ↔ 300 mA step, COUT = 1.0 μF) (maintains regulation during burst-mode RF transmission) |
| Ripple rejection | 70 dB typ. at 1 kHz (suppresses switching noise from upstream DC/DC converters) |
| Quiescent current | 68 μA typ. at 3.3 V (reduces standby power in always-on sensor or connectivity modules) |
Pinout & Package
TCR3DM33,RF uses the ultra-compact DFN4E package (1.0 mm × 1.0 mm × 0.58 mm, 1.3 mg), with exposed thermal pad connected to GND for enhanced heat dissipation in space-constrained PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIN | Input power supply | Accepts 1.75–5.5 V; requires 1.0 μF ceramic decoupling close to pin |
| VOUT | Regulated output | Delivers stable 3.3 V; connects directly to load with 1.0 μF ceramic output capacitor |
| GND | Ground reference | Common return path; center thermal pad must be soldered to GND plane for thermal and EMI control |
| CONTROL | Enable/disable input | Active-high logic: ≥1.0 V = ON, ≤0.4 V = OFF; includes internal pull-down to GND |
Key Features
| Feature | Design Value |
|---|---|
| Inrush current protection | Limits peak input current during startup to prevent voltage droop on shared supply rails |
| Auto-discharge function | Actively discharges VOUT via internal FET when CONTROL = LOW, enabling fast power-down sequencing |
| Ceramic capacitor support | Stable with 1.0 μF CIN and COUT (no ESR requirement), reducing board area vs. tantalum alternatives |
| Low thermal resistance | θJA ≈ 238 °C/W (on FR4 board), enabling 300 mA operation at 85°C ambient without derating |
| Precision output accuracy | ±1.0% over temperature (−40°C to +85°C), critical for analog sensor and RF biasing stability |
Applications
| Cellular Baseband Power | RF Front-End Biasing |
|---|---|
Use Scenario: Powering application processors and modem ICs in LTE/5G smartphones during burst transmission cycles. IC Role / Device Role / Timing Role: Primary LDO supplying clean 3.3 V to baseband SoC I/O and memory interfaces. Use Value: Fast load transient response (±80 mV) prevents brownout during 300 mA transmit pulses, while low noise preserves signal integrity in high-speed data paths. |
Use Scenario: Providing regulated bias to PA drivers, LNAs, and RF switches in sub-6 GHz front-end modules. IC Role / Device Role / Timing Role: Low-noise post-regulator after buck converter, isolating sensitive RF circuitry from switching noise. Use Value: 38 μVrms output noise and 70 dB ripple rejection minimize phase noise degradation in local oscillators and receiver chains. |
| Wearable Sensor Hub | IoT Edge Node MCU Supply |
Use Scenario: Powering MEMS accelerometers, gyroscopes, and environmental sensors in compact wearables with coin-cell or small Li-ion batteries. IC Role / Device Role / Timing Role: Ultra-low-quiescent (68 μA) LDO enabling long-term sensor monitoring in sleep mode. Use Value: Auto-discharge ensures rapid VOUT collapse during MCU deep-sleep entry, eliminating leakage through unpowered peripherals. |
Use Scenario: Supplying 3.3 V to ARM Cortex-M microcontrollers and BLE/Wi-Fi radios in battery-powered industrial IoT nodes. IC Role / Device Role / Timing Role: Main system rail LDO with enable control synchronized to radio wake-up events. Use Value: Inrush protection prevents battery voltage sag during cold-start of MCU + radio combo, ensuring reliable boot sequence. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LDO regulator applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Torex XC6210B332MR-G | Same 3.3 V output, 300 mA rating, but higher dropout (250 mV typ.), no auto-discharge | Lacks active discharge; unsuitable where fast VOUT decay is required for sequencing | Prefer TCR3DM33,RF when auto-discharge and lower dropout are needed for tight battery headroom |
| Rohm BD33IC0WEFJ-C | 3.3 V, 300 mA, 200 mV dropout, but requires 2.2 μF COUT and has no inrush protection | No integrated inrush limiting; external RC network needed for surge control | Choose TCR3DM33,RF for simplified design with built-in inrush protection and ceramic capacitor flexibility |
Compared with XC6210B332MR-G and BD33IC0WEFJ-C, the TCR3DM33,RF delivers superior system-level integration via inrush protection, auto-discharge, and guaranteed stability with 1.0 μF ceramics - reducing BOM count and layout complexity in space- and power-constrained portable designs.
Availability
TCR3DM33,RF is available at Aetrix Electronics and suitable for cellular handsets, RF front-end modules, wearable sensor systems, and battery-powered IoT edge nodes requiring stable component supply with consistent lead times and full traceability.
Supply support for TCR3DM33,RF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-efficiency, miniaturized analog and power management ICs for consumer, industrial, and communications markets, with emphasis on reliability and integration.
The TCR3DM series targets portable electronics requiring ultra-small footprint, low-noise, and intelligent power control - specifically engineered for battery-powered RF and baseband subsystems demanding high transient performance and sequencing capability.
FAQ
What is the maximum input voltage rating for TCR3DM33,RF?
The TCR3DM33,RF supports a maximum input voltage of 6.0 V per absolute maximum ratings. However, for reliable operation across temperature and load, the recommended operating VIN range is 1.75 V to 5.5 V - ensuring proper dropout margin and thermal safety during 300 mA output conditions. Exceeding 5.5 V may trigger overvoltage stress not covered by functional specifications.
Does TCR3DM33,RF require an external resistor for the CONTROL pin?
No, the TCR3DM33,RF includes an internal pull-down resistor between CONTROL and GND, so no external resistor is needed for default OFF-state behavior. The CONTROL pin accepts standard CMOS logic levels: it turns ON when driven to ≥1.0 V and turns OFF when ≤0.4 V. This simplifies interface design with microcontrollers or PMIC sequencers.
Can TCR3DM33,RF operate with only 1.0 μF ceramic capacitors on input and output?
Yes, the TCR3DM33,RF is fully characterized and guaranteed stable with 1.0 μF X5R/X7R ceramic capacitors on both VIN and VOUT. Unlike many LDOs requiring specific ESR ranges, this device eliminates the need for tantalum or aluminum electrolytic capacitors - reducing size, cost, and aging-related drift in portable applications.
How does the auto-discharge function work in TCR3DM33,RF?
When the CONTROL pin is pulled LOW (≤0.4 V), the TCR3DM33,RF activates an internal NMOS switch between VOUT and GND, discharging the output capacitor rapidly. This ensures VOUT falls to near-zero within microseconds, enabling precise power sequencing in multi-rail systems - a feature absent in most standard LDOs and critical for avoiding latch-up in downstream logic.
What is the thermal performance of TCR3DM33,RF on a standard FR4 PCB?
On a 40 mm × 40 mm FR4 board with 50% copper coverage on both sides, the TCR3DM33,RF achieves a junction-to-ambient thermal resistance (θJA) of approximately 238 °C/W. At 300 mA and 85°C ambient, junction temperature remains below 125°C - well within the 150°C absolute maximum - confirming suitability for sustained operation in thermally dense smartphone and wearable PCB layouts.
TCR3DM33,RF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 4-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Positive
- Output Type:
- Fixed
- Number of Regulators:
- 1
- Voltage - Input (Max):
- 5.5V
- Voltage - Output (Min/Fixed):
- 3.3V
- Voltage - Output (Max):
- -
- Voltage Dropout (Max):
- 0.23V @ 300mA
- Current - Output:
- 300mA
- Current - Quiescent (Iq):
- -
- Current - Supply (Max):
- -
- PSRR:
- -
- Control Features:
- Enable
- Protection Features:
- Over Current, Over Temperature
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN (1x1)
TCR3DM33,RF FAQ
1.How can I place an order for TCR3DM33,RF through Aetrix?
Please submit a Request for Quotation (RFQ) for TCR3DM33,RF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCR3DM33,RF reliable?
The price and inventory of TCR3DM33,RF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR3DM33,RF is usually 5 days.
3.What payment methods are accepted for TCR3DM33,RF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR3DM33,RF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCR3DM33,RF?
TCR3DM33,RF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCR3DM33,RF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCR3DM33,RF?
For technical support, including TCR3DM33,RF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR3DM33,RF requirements.
6.How does Aetrix verify that TCR3DM33,RF is sourced from the original manufacturer or authorized distributors?
All TCR3DM33,RF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR3DM33,RF meets industry standards.
7.What is the process for return or replacement of TCR3DM33,RF?
All TCR3DM33,RF units undergo pre-shipment inspection (PSI). If there is an issue with TCR3DM33,RF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCR3DM33,RF part is unused and in its original packaging.
Return procedure for TCR3DM33,RF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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