Toshiba Semiconductor and Storage TCR3DM36,LF

Overview

TCR3DM36,LF from Toshiba Electronic Devices & Storage Corporation is a 3.6 V fixed-output CMOS low-dropout regulator delivering up to 300 mA with 150 mV typical dropout voltage (at 300 mA), 38 μV_rms output noise, and inrush current protection - deployed as a primary power rail for RF transceivers and baseband ICs in cellular handsets.

For engineers reviewing the TCR3DM36,LF datasheet, TCR3DM36,LF pinout, TCR3DM36,LF application, or TCR3DM36,LF equivalent, key selection criteria include ultra-low-noise regulation for sensitive analog circuitry, fast load transient response (±80 mV), compatibility with 1.0 μF ceramic input/output capacitors, and DFN4E package constraints for high-density portable PCB layouts.

Technical Context

The TCR3DM36,LF employs a CMOS pass transistor architecture enabling low quiescent current (78 μA typical at 4.5 V output) and stable operation with minimal external components. Its integrated inrush current protection circuit limits peak input current during power-up, while the auto-discharge function rapidly discharges the output capacitor when disabled via the CONTROL pin.

It features internal over-current and over-temperature protection, a dedicated CONTROL pin with defined ON/OFF thresholds (1.0–5.5 V for ON, 0–0.4 V for OFF), and a center thermal pad that must be connected to GND for thermal performance. The device operates across –40°C to +85°C and supports input voltages from 1.75 V to 5.5 V.

Key Specifications

Pinout & Package

TCR3DM36,LF is housed in an ultra-small DFN4E package (1.0 mm × 1.0 mm × 0.58 mm height) with exposed thermal pad. The package weighs 1.3 mg and requires GND connection of the center pad for thermal management and electrical stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise, 300 mA LDO applications.

Compared with TCR3DM36,LF, TCS2112A36 trades auto-discharge for slightly higher IQ, while MCP1703T-3602E/MB sacrifices dropout performance and package size for broader vendor availability - making TCR3DM36,LF optimal for space-constrained, noise-sensitive, and sequenced-power designs.

Availability

TCR3DM36,LF is available at Aetrix Electronics and suitable for cellular handset power management, wearable sensor hubs, industrial IoT edge nodes, and automotive infotainment displays requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for TCR3DM36,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power efficiency and miniaturization.

The TCR3DM series targets portable electronics requiring ultra-small, low-noise, and feature-rich LDOs - specifically engineered for high-density mobile platforms where board space, battery life, and signal integrity are critical.

FAQ

What is the maximum input voltage rating for TCR3DM36,LF?

The absolute maximum input voltage for TCR3DM36,LF is 6.0 V. However, the recommended operating input voltage range is 1.75 V to 5.5 V per electrical characteristics testing conditions. Exceeding 5.5 V may trigger overvoltage stress not covered by standard reliability qualification, and operation above 6.0 V risks permanent damage. Always ensure input transient suppression (e.g., TVS diode) is implemented if the source can exceed 5.5 V.

Does TCR3DM36,LF require an external pull-up resistor on the CONTROL pin?

No, TCR3DM36,LF does not require an external pull-up resistor on the CONTROL pin because it integrates an internal pull-down. When left unconnected, the CONTROL pin defaults to logic LOW, disabling the regulator and activating auto-discharge. To enable the device, drive the pin to ≥1.0 V using a clean digital signal - no external biasing components are needed, simplifying PCB layout and reducing BOM count.

Can TCR3DM36,LF operate with a 1.0 μF ceramic capacitor on both input and output?

Yes, TCR3DM36,LF is fully characterized and guaranteed to operate stably with 1.0 μF X5R/X7R ceramic capacitors on both VIN and VOUT. This is explicitly validated in the datasheet's Electrical Characteristics table and Application Note section. Using smaller or lower-ESR capacitors may degrade load transient response or cause instability, so adherence to the 1.0 μF minimum value is required for production compliance.

What is the thermal pad connection requirement for TCR3DM36,LF?

The center thermal pad of TCR3DM36,LF must be soldered to a GND plane on the PCB. It is not optional - the pad serves both thermal conduction (to dissipate up to 420 mW) and electrical grounding for internal circuit stability. Leaving it floating or connecting it to another net violates the Absolute Maximum Ratings and may cause thermal runaway or output regulation failure. Use at least four thermal vias under the pad connected to an inner-layer GND plane.

How does the inrush current protection circuit in TCR3DM36,LF function during startup?

The inrush current protection circuit in TCR3DM36,LF limits peak input current during initial power application by controlling the gate slew rate of the internal CMOS pass transistor. This prevents large capacitive loads on VOUT from drawing excessive current from VIN, avoiding input rail collapse and preventing false triggering of upstream overcurrent protection. The feature operates automatically - no external components or configuration are required - and is active each time the CONTROL pin transitions from OFF to ON.