Infineon Technologies TD142N12KOFHPSA1

Overview

TD142N12KOFHPSA1 from Infineon Technologies is a phase-control thyristor module rated for 1200 V repetitive peak forward/reverse off-state voltage (V_DRM/V_RRM), 142 A average on-state current (I_TAVM) at T_C = 85 °C, and 230 A RMS on-state current (I_TRMSM). It features 1000 V/µs critical rate of rise of off-state voltage (dv/dt)_cr, 150 A/µs critical rate of rise of on-state current (di/dt)_cr, and is designed for industrial AC power control in medium-power rectifier and motor drive circuits.

For engineers reviewing the TD142N12KOFHPSA1 datasheet, TD142N12KOFHPSA1 pinout, TD142N12KOFHPSA1 application, or TD142N12KOFHPSA1 equivalent, key selection criteria include verified thermal resistance (R_thJC = 0.110 °C/W per module), gate trigger parameters (I_GT ≤ 150 mA, V_GT ≤ 2 V), and surge capability (I_TSM = 4800 A, t_P = 10 ms).

Technical Context

This device is a press-pack, dual-arm thyristor module with AlN ceramic internal isolation and silicon pellets under mechanical pressure contact. It supports both two-pulse (B2) and six-pulse (B6) bridge configurations, with commutated turn-off time (t_q) of 200 µs at T_vj = 125 °C and specified for natural or forced cooling using heatsink type KM17.

Its gate control characteristics are defined per DIN IEC 747-6: latching current (I_L) ≤ 800 mA, holding current (I_H) ≤ 200 mA, and non-trigger limits (I_GD ≤ 10 mA, V_GD ≤ 0.25 V) ensure robust noise immunity in high-noise industrial environments.

Key Specifications

Pinout & Package

TD142N12KOFHPSA1 is housed in a press-pack module with isolated copper baseplate and dual thyristor arms. Electrical terminals are arranged as three main power connections (Anode 1, Cathode 1, Anode 2/Cathode 2 common) plus two isolated gate control terminals (G1, K1 and G2, K2). Mechanical mounting uses M1 screws (6 Nm ±15%) and terminal connections use M2 screws (6 Nm ±10%).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT142N12KOFHPSA1 and DT142N12KOFHPSA1, TD142N12KOFHPSA1 offers standardized dual-arm isolation and gate separation ideal for independent B6 bridge control, whereas TT variant prioritizes mechanical interchangeability and DT variant targets AC switching symmetry.

Availability

TD142N12KOFHPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, DC power supplies, welding equipment, and heating control systems requiring stable component supply and long-term production continuity.

Supply support for TD142N12KOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to Infineon's "Netz-Thyristor-Modul" series, engineered specifically for high-reliability, medium-power AC phase control in harsh industrial environments where thermal stability and gate noise immunity are critical.

FAQ

What is the maximum junction temperature and how is it enforced?

The maximum junction temperature (T_{vj max}) is 125 °C, strictly enforced by thermal design using the specified R_thJC = 0.110 °C/W and R_thCH = 0.03 °C/W values. Engineers must limit case temperature (T_C) to ≤85 °C at 142 A average current, verified via thermocouple measurement on the baseplate under worst-case ambient and cooling conditions.

Does TD142N12KOFHPSA1 require external snubber circuits?

Snubbers are not mandatory due to its 1000 V/µs (dv/dt)_cr rating, which exceeds typical 50/60 Hz line transients. However, a small RC snubber (e.g., 100 Ω + 0.1 µF) is recommended for inductive loads with rapid current decay or in systems with long cable runs to suppress voltage overshoot beyond V_DSM = 1200 V.

How are the gate terminals isolated and what is their voltage rating?

Gate terminals G1/K1 and G2/K2 are galvanically isolated from each other and from the main power terminals by AlN ceramic insulation, rated for 3.0 kV RMS (1 sec) per IEC 60747-5. This allows independent gate drive referencing and eliminates ground-loop coupling in multi-module systems.

Can TD142N12KOFHPSA1 be used in parallel configurations?

Parallel operation is not recommended without active current-sharing circuitry. The device lacks built-in dynamic balancing features, and parameter spread (e.g., V_T, t_q) between units may cause unequal current distribution. For >230 A RMS requirements, use higher-rated modules (e.g., TD162N14KOF) instead of paralleling.