Infineon Technologies TD162N12KOFHPSA1

Overview

TD162N12KOFHPSA1 from Semikron is a phase-control thyristor module with dual anti-parallel SCR configuration, rated for 1200 V repetitive peak off-state voltage (VDRM/VRRM), 162 A average on-state current (ITAVM) at TC = 85°C, and 260 A RMS on-state current (ITRMSM). It delivers 1.41 V maximum on-state voltage at 500 A and 125°C junction temperature, and is designed for industrial AC power control in medium-power rectification and motor speed regulation.

For engineers reviewing the TD162N12KOFHPSA1 datasheet, TD162N12KOFHPSA1 pinout, TD162N12KOFHPSA1 application, or TD162N12KOFHPSA1 equivalent, key selection criteria include commutated turn-off time (tq = 200 µs typ), critical dv/dt rating (1000 V/µs), thermal resistance (RthJC = 0.096 °C/W per arm, DC), gate trigger current (IGT ≤ 150 mA), and isolation test voltage (3.0 kV RMS, 1 sec).

Technical Context

This dual-thyristor module implements a B6 six-pulse bridge-compatible anti-parallel SCR topology optimized for line-commutated AC-to-DC conversion. Its 125°C maximum junction temperature and 0.096 °C/W junction-to-case thermal resistance per arm support high-reliability operation under forced-air cooling with heatsink KM17 (Papst 4650N).

The device features a pressure-contact silicon pellet construction with aluminum nitride (AlN) internal insulation, enabling 3.0 kV RMS isolation (1 sec) and creepage distance of 15 mm. Its 200 µs typical commutated turn-off time (tq) and 1000 V/µs critical off-state voltage rise rate (dv/dt)cr ensure robust commutation in inductive load applications such as DC motor drives and welding power supplies.

Key Specifications

Pinout & Package

TD162N12KOFHPSA1 is housed in a press-pack module package with isolated baseplate, featuring three main terminals (A1, A2, G) per thyristor arm and common mechanical mounting points. The module uses pressure-contact Si pellets and AlN ceramic isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with SKKT 106/12 E and TT162N12KOF, TD162N12KOFHPSA1 offers higher current capacity (162 A vs. 106 A), lower thermal resistance (0.096 vs. 0.125 °C/W), and integrated dual-arm topology-enabling compact, thermally balanced six-pulse rectifiers without external paralleling.

Availability

TD162N12KOFHPSA1 is available at Aetrix Electronics and suitable for industrial DC motor drives, medium-power welding supplies, AC voltage regulators, and static VAR compensators requiring stable component supply and long-term production continuity.

Supply support for TD162N12KOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semikron is a German power semiconductor manufacturer specializing in high-reliability modules for industrial, energy, and traction applications.

This part belongs to the SKiiP® and Press-Pack thyristor module product line, engineered for ruggedized line-commutated power conversion in harsh environments where thermal cycling, voltage transients, and long service life are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum allowable case temperature (TC) is not fixed-it depends on load current and conduction angle. At ITAVM = 162 A and Θ = 180° (full conduction), TC must not exceed 85°C per datasheet derating curves. With forced cooling (KM17/Papst 4650N), TC can reach 105°C at lower currents. Always reference Figure 7 (TC = f(ITAVM)) in the official datasheet for exact limits.

Does TD162N12KOFHPSA1 require a heatsink, and what mounting torque is specified?

Yes, active heatsinking is mandatory: RthJC = 0.096 °C/W per arm demands low-thermal-resistance mounting. Mechanical connections require M1 screws tightened to 6 Nm ± 15%, and electrical terminals (M2) to 6 Nm ± 10%. Use thermal interface material with ≤0.1 °C·in²/W resistance and verify flatness < 30 µm across the baseplate.

Can this module be used in parallel configurations, and what precautions apply?

Parallel operation is supported but requires matched modules, identical gate drive timing (< 1 µs skew), and current-sharing inductors (≥10 µH per arm). Gate resistors must be ≤10 Ω to ensure simultaneous turn-on; mismatched tq or vT values cause current imbalance. Derate total ITAVM by 15% for two modules in parallel.

What is the gate drive requirement for reliable turn-on under worst-case conditions?

For guaranteed turn-on at Tvj = 125°C and vD = 6 V, gate trigger current must exceed 150 mA (IGT max), with pulse width ≥20 µs and diG/dt ≥0.6 A/µs. A 15 V, 200 mA peak gate driver with 1 µF local decoupling is recommended. Avoid exceeding VGT = 2 V to prevent gate oxide stress.