Infineon Technologies TD330N16KOFHPSA2

Overview

TD330N16KOFHPSA2 from Infineon Technologies is a phase-control thyristor module designed for high-power AC line switching and rectification in industrial drive systems. It delivers 330 A average on-state current (ITAVM) at TC = 85°C, 1600 V repetitive peak off-state voltage (VDRM/VRRM), and features pressure-contact die attachment for thermal and mechanical robustness. It is used in soft starters, static switches, and UPS rectifiers where high surge capability (ITSM = 12.5 kA) and low conduction loss (VT0 = 0.8 V, rT = 0.5 mΩ) are critical.

For engineers reviewing the TD330N16KOFHPSA2 datasheet, TD330N16KOFHPSA2 pinout, TD330N16KOFHPSA2 application, or TD330N16KOFHPSA2 equivalent, key selection criteria include junction-to-case thermal resistance (RthJC = 0.106 K/W), gate trigger parameters (IGT ≤ 200 mA, VGT ≤ 2 V), commutation turn-off time (tq = 250 µs), and electrically insulated baseplate compatibility with TIM pre-application.

Technical Context

This dual-thyristor module operates in phase-controlled AC power circuits, enabling precise firing-angle control to regulate RMS output voltage and current. Its design supports both half-wave and full-wave bridge configurations (B2/B6), with validated performance up to 130°C junction temperature and 1000 V/µs critical dv/dt rating.

The module integrates two thyristor dies in a single industrial-standard package with electrically isolated copper baseplate and pressure-contact interconnection. Thermal management is optimized via low RthJC (0.106 K/W per arm) and optional pre-applied TIM, enabling stable operation under high I²t stress (781,250 A²s at Tvj = 25°C, tP = 10 ms).

Key Specifications

Pinout & Package

TD330N16KOFHPSA2 is housed in an industrial-standard press-pack module with electrically insulated baseplate (Class 1, EN61140), AlN ceramic isolation, and M1 (5 Nm) mechanical mounting points. The module contains two thyristor arms sharing common cathode/anode terminals and independent gate terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT330N16KOFHPSA2 and TD330N16KOFTLPSA2, TD330N16KOFHPSA2 offers optimal balance of pre-applied TIM convenience, 17 mm creepage, and 0.106 K/W RthJC-making it ideal for indoor industrial drives where thermal assembly control and space constraints favor integrated TIM.

Availability

TD330N16KOFHPSA2 is available at Aetrix Electronics and suitable for soft starters, UPS rectifiers, static switches, and crowbar protection systems requiring stable component supply, long-life reliability, and qualified industrial-grade thermal performance.

Supply support for TD330N16KOFHPSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

This part belongs to Infineon's High-Power Thyristor Module product line, engineered for ruggedized AC power control in motor drives, power conditioning, and grid-tied equipment where reliability under thermal and electrical stress is mission-critical.

FAQ

What is the maximum allowable junction temperature for TD330N16KOFHPSA2?

The maximum junction temperature (Tvj max) is 130°C, as specified in the Infineon technical information document revision 3.5. Operation beyond this limit risks irreversible degradation of the thyristor die and pressure-contact interface. Thermal design must ensure that under worst-case ITAVM and ambient conditions, junction temperature remains below 130°C using the provided ZthJC transient impedance model and RthCH values.

Does TD330N16KOFHPSA2 require external gate resistors?

Yes - gate resistors are required to limit peak gate current and shape the gate pulse rise time. The datasheet specifies maximum gate trigger current IGT ≤ 200 mA and gate trigger voltage VGT ≤ 2 V at 12 V anode-cathode voltage. A typical gate resistor of 10–22 Ω (with appropriate power rating) ensures compliance with the 20 W/10 ms peak gate power limit and prevents gate damage during repeated firing.

Can TD330N16KOFHPSA2 be used in a single-phase full-wave bridge configuration?

Yes - the module contains two independent thyristor arms, each with isolated anode, cathode, and gate terminals, making it suitable for single-phase full-wave (B2) bridge rectification or phase control. The 1600 V VDRM rating supports 400–480 VAC line voltages with safety margin. Layout must maintain ≥17 mm creepage between high-voltage terminals and respect the 3.6 kV insulation test rating.

Is the baseplate electrically isolated, and what is its insulation rating?

Yes - the baseplate uses AlN ceramic isolation rated for 3.6 kV RMS (1 second, 50 Hz) and 3.0 kV RMS (1 minute). This Class 1 insulation (per EN61140) allows direct mounting onto grounded heatsinks without additional insulating hardware, reducing system complexity and thermal resistance. The isolation remains valid only if mounting torque is maintained within ±15% of 5 Nm for M1 screws.