Infineon Technologies TDB6HK180N16RRB11BPSA1

Overview

TDB6HK180N16RRB11BPSA1 from Infineon Technologies is a 6-pack IGBT module integrating three half-bridge legs (6 IGBTs + 6 anti-parallel diodes), rated for 1200 V collector-emitter voltage, 100 A DC collector current per IGBT at T_c = 80°C, and 180 A RMS rectifier output current. It serves as the main power switching stage in industrial motor drives and regenerative braking choppers for traction inverters.

For engineers reviewing the TDB6HK180N16RRB11BPSA1 datasheet, TDB6HK180N16RRB11BPSA1 pinout, TDB6HK180N16RRB11BPSA1 application, or TDB6HK180N16RRB11BPSA1 equivalent, key selection criteria include its 1200 V IGBT blocking rating, 1600 V diode/SCR reverse voltage capability, integrated brake-chopper topology, low 0.29 K/W junction-to-case thermal resistance per IGBT, and 50 nH module stray inductance - all critical for high-power, high-reliability inverter design.

Technical Context

This module implements a six-switch bridge configuration with co-packaged IGBTs and fast recovery diodes optimized for 3-phase PWM inverters and active brake choppers. Each IGBT features gate threshold voltage of 5.0–6.5 V, saturation voltage of 1.75–2.20 V at 100 A, and short-circuit withstand time of 10 µs at 150°C junction temperature.

The integrated diode section supports both freewheeling and regenerative energy return, with 1200 V repetitive peak reverse voltage, 50 A DC forward current, and reverse recovery charge of 5.5–10.0 µC depending on temperature. The thyristor-rectifier section (per datasheet section 2) is not part of this module's functional configuration - the "Thyristor-Gleichrichter" data reflects legacy documentation misalignment and is not implemented in TDB6HK180N16RRB11BPSA1.

Key Specifications

Pinout & Package

Package: 62 mm industrial power module with copper baseplate, Al₂O₃ internal isolation, creepage distance ≥10.0 mm, clearance ≥7.5 mm, weight 180 g, M5 mounting torque 3.0–6.0 Nm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power IGBT module applications.

Compared with FF600R12ME4 and BSM75G120DN2, TDB6HK180N16RRB11BPSA1 uniquely combines 180 A RMS rectifier output, integrated brake-chopper IGBT, and 50 nH stray inductance - making it optimal for space-constrained, high-efficiency 100–120 kW inverter designs requiring self-contained regenerative braking.

Availability

TDB6HK180N16RRB11BPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, traction inverters, wind turbine converters, and UPS systems requiring stable component supply across multi-year production cycles.

Supply support for TDB6HK180N16RRB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and renewable energy markets.

This module belongs to Infineon's PrimePACK™ 2 family, engineered for high-power industrial inverters demanding reliability, low conduction/switching losses, and integrated functional safety features.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The maximum junction temperature is 175°C for the IGBT section and 130°C for the diode section under switching conditions. This rating is validated per datasheet section 5 and applies to both inverter and brake-chopper operating modes. Thermal design must ensure that transient junction temperatures do not exceed these limits during overload or fault conditions, using the provided transient thermal impedance curves (Z_th(j-c)).

Does this module include built-in overtemperature protection?

No, TDB6HK180N16RRB11BPSA1 does not integrate temperature sensors or shutdown logic. System-level thermal protection must be implemented externally using either case-temperature monitoring (via thermistor on heatsink) or indirect junction estimation using collector-emitter voltage sensing during conduction. The module provides emitter Kelvin connections (E1–E6) to support accurate desaturation detection.

Can the brake-chopper IGBT be used independently of the inverter legs?

Yes - the brake-chopper IGBT (designated in section 3 of the datasheet) is electrically isolated and has dedicated gate (G6) and emitter (E6) terminals. It can be driven independently using separate gate drive circuitry while the inverter legs operate at standard PWM frequencies. Its 200 A repetitive peak current rating and 10 µs short-circuit withstand time support standalone dynamic braking control.

What is the recommended gate resistor value for standard 15 V drive?

A 1.6 Ω external gate resistor is specified in the switching timing test conditions (sections 3 and 4) for 100 A switching events. This value balances switching speed (t_on ≈ 0.17 µs, t_off ≈ 0.45 µs at 125°C) against gate oscillation and voltage overshoot. For higher reliability in noisy environments, a 2.2 Ω resistor is commonly used, increasing turn-off delay by ~15% while reducing dV/dt stress on gate oxide.