Infineon Technologies TDB6HK180N16RRB21BOSA1

Overview

TDB6HK180N16RRB21BOSA1 from Infineon is a 1200 V / 180 A EconoPACK™2 IGBT module integrating IGBTs, anti-parallel diodes, and thyristors for half-controlled B6-bridge and active rectifier topologies. It delivers 515 W total power dissipation at TC = 25°C, features 2.5 kV AC/1 min isolation, and uses Al₂O₃ substrate with copper baseplate for low thermal resistance (RthJC = 0.29 K/W per IGBT).

For engineers reviewing the TDB6HK180N16RRB21BOSA1 datasheet, TDB6HK180N16RRB21BOSA1 pinout, TDB6HK180N16RRB21BOSA1 application, or TDB6HK180N16RRB21BOSA1 equivalent, key selection criteria include VCES = 1200 V, VRRM = 1600 V (thyristor/diode), IC nom = 180 A (rectifier output), short-circuit withstand time ≤10 µs, and RthCH = 0.02 K/W (per module) for high-power industrial drive thermal management.

Technical Context

This module implements a hybrid half-controlled rectifier architecture combining IGBTs (for chopper/active switching), fast recovery diodes (for freewheeling), and phase-controlled thyristors (for line-commutated rectification). Its dual-voltage rating-1200 V for IGBTs and 1600 V for thyristors/diodes-enables asymmetric voltage handling across conduction paths.

Thermal design leverages a copper baseplate with Al₂O₃ insulation (2.5 kV AC/1 min), achieving RthCH = 0.02 K/W per module and enabling high-power density in compact EconoPACK™2 packaging. Stray inductance is controlled at LsCE = 50 nH to limit voltage overshoot during switching.

Key Specifications

Pinout & Package

EconoPACK™2 package with isolated copper baseplate, 2.5 kV AC/1 min insulation, and M5 mounting screws. Dimensions conform to Infineon standard EconoPACK™2 outline (140 mm × 100 mm × 17 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid rectifier module applications.

Compared with FF600R12ME4 and BSM150GB120DN2, TDB6HK180N16RRB21BOSA1 uniquely integrates thyristors rated for 1600 V VRRM within the same package-enabling true half-controlled B6-bridge operation without external devices, reducing bill-of-materials count by ≥40% and system-level stray inductance by >60%.

Availability

TDB6HK180N16RRB21BOSA1 is available at Aetrix Electronics and suitable for industrial motor drives, active rectifier systems, crane & hoist control, and energy recovery braking requiring stable component supply and long-term lifecycle assurance.

Supply support for TDB6HK180N16RRB21BOSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

This part belongs to Infineon's EconoPACK™2 hybrid power module product line, designed specifically for medium-power industrial drives requiring integrated half-controlled rectification, active braking, and high thermal reliability in compact form factors.

FAQ

What is the maximum allowable case temperature for continuous operation?

The module supports continuous operation at TC = 80°C for all sections (IGBT, diode, thyristor), with peak transient case temperatures up to 100°C permitted for ≤1 minute. Exceeding 80°C requires derating per the RthJC and RthCH curves in the datasheet to maintain Tvj ≤ 175°C (IGBT) or ≤130°C (thyristor).

Can this module be used in a fully controlled three-phase inverter?

No-TDB6HK180N16RRB21BOSA1 lacks upper-leg thyristors and has asymmetrical voltage ratings (1200 V IGBT vs. 1600 V thyristor), making it unsuitable for full-bridge inverter operation. It is engineered exclusively for half-controlled B6-bridge and active rectifier topologies where thyristors handle line-commutated conduction.

What gate drive voltage is required for reliable thyristor triggering?

Thyristors require VGT = 2.0 V and IGT = 100 mA at Tvj = 25°C, with gate trigger pulses ≥10 µs duration. Drive circuits must deliver ≥300 mW peak power per gate (VGT × IGT) and maintain VGD < 0.3 V under non-trigger conditions to prevent false turn-on at high dv/dt (up to 1000 V/µs).

How does the 2.5 kV isolation rating impact system safety certification?

The 2.5 kV AC/1 min isolation between terminals and heatsink satisfies IEC 61800-5-1 reinforced insulation requirements for 690 V AC drives, eliminating need for additional creepage/clearance barriers. CTI > 200 and 10 mm creepage distance further support UL 508 and EN 61800-5-1 compliance in industrial environments.