Infineon Technologies TDB6HK180N16RRB48BPSA1
- Part No.:
- TDB6HK180N16RRB48BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- SCRs - Modules
- Package:
- Module
- Datasheet:
-
TDB6HK180N16RRB48BPSA1.pdf
- Description:
- SCR MODULE VDRM 1600V 70A
- Quantity:
- Payment:

- Shipping:

Inventory:9,504
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Product details
Overview
TDB6HK180N16RRB48BPSA1 from Infineon is a 1200 V / 180 A EconoPACK™2 power module integrating IGBTs, thyristors, and diodes for hybrid active rectifier and brake-chopper applications. It features 2.5 kV AC isolation, Al₂O₃ substrate with 0.02 K/W total case-to-heatsink thermal resistance, and supports 175 °C IGBT junction operation in inverter/brake-chopper topologies.
For engineers reviewing the TDB6HK180N16RRB48BPSA1 datasheet, TDB6HK180N16RRB48BPSA1 pinout, TDB6HK180N16RRB48BPSA1 application, or TDB6HK180N16RRB48BPSA1 equivalent, key selection criteria include its dual-function thyristor-IGBT-diode integration, 1600 V reverse-rated thyristor/diode sections, 1200 V IGBT blocking capability, and validated use in half-controlled B6-bridge and active rectifier systems requiring high-power density and isolated copper baseplate mounting.
Technical Context
This module implements a hybrid topology combining IGBT-based brake-chopper switching (1200 V VCES, 100 A IC,nom) with parallel thyristor-rectifier stages (1600 V VRRM, 180 A IRMS,max) and freewheeling diodes (1200 V VRRM, 50 A IF). Its internal layout enables simultaneous conduction control and regenerative energy dissipation in industrial drive DC-link circuits.
Thermal design leverages low-RthJC values per die (0.29 K/W IGBT, 0.30 K/W thyristor, 0.35 K/W diode) and a shared 0.02 K/W module-level RthCH, enabled by copper baseplate and Al₂O₃ insulation. Stray inductance is fixed at 50 nH, supporting stable switching up to 10 µs short-circuit withstand time under 800 V bus conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES (IGBT) | 1200 V - Enables direct connection to 690 V AC three-phase systems with 2× overvoltage margin |
| VRRM (Thyristor/Diode) | 1600 V - Supports half-controlled B6-bridge operation with 1.5× line-to-line peak voltage headroom |
| IC,nom / IRMS,max | 100 A / 180 A - Dual-rating reflects IGBT continuous current vs. thyristor RMS output capability |
| RthCH (Module) | 0.02 K/W - Total case-to-heatsink thermal resistance enabling compact heatsink sizing for 515 W Ptot |
| LsCE | 50 nH - Fixed stray inductance limiting voltage overshoot during 360 A short-circuit turn-off |
| Tvj,max (IGBT/Thyristor) | 175 °C / 130 °C - Different maximum junction temperatures reflect distinct thermal limits for switching vs. rectification dies |
| Isolation Voltage | 2.5 kV AC, 1 min - UL E83335 certified basic insulation between terminals and heatsink |
Pinout & Package
EconoPACK™2 package with isolated copper baseplate, 22-pin solder-contact footprint (12 mm × 108 mm × 35 mm), RoHS-compliant, weight 180 g. Mounting torque: M5 screws, 3.0–6.0 Nm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2, P3 | DC+ input / Thyristor anodes | High-current inputs for active rectifier stage; rated for 180 A RMS |
| N1, N2, N3 | DC− return / Thyristor cathodes | Common cathode outputs feeding B6-bridge midpoints; 2.5 kV isolation from baseplate |
| U, V, W | AC line terminals | Three-phase AC inputs connected to thyristor gates via trigger circuitry |
| IGBT-C, IGBT-E | Brake-chopper collector/emitter | 1200 V, 100 A IGBT section dissipating regenerative energy into DC-link resistor |
| D+, D− | Brake-diode anode/cathode | 50 A freewheeling path for chopper inductor current during IGBT off-time |
| G1–G6 | Thyristor gate drivers | Individual gate terminals accepting 2.0 V trigger voltage and 100 mA IGT |
| GE | IGBT gate emitter | ±20 V rated gate terminal controlling 100 A IGBT with 0.80 µC QG |
Key Features
| Feature | Design Value |
|---|---|
| Hybrid topology integration | Single-module co-location of IGBT, thyristor, and diode dies eliminates interconnect inductance in active rectifier + brake-chopper systems |
| Al₂O₃ ceramic isolation | 0.35 K/W diode RthJC and 0.29 K/W IGBT RthJC enabled by low-thermal-resistance substrate and copper baseplate |
| UL-certified isolation | 2.5 kV AC, 1 min test voltage validated per UL E83335 for functional safety in industrial drives |
| Controlled short-circuit behavior | 10 µs withstand time at 360 A with VCEmax = VCES − LsCE·di/dt ensures predictable fault handling |
| Thyristor gate robustness | 100 mA IGT and 2.0 V VGT enable reliable triggering even with 6 Ω gate loop impedance |
Applications
| Active Rectifier System | Half-Controlled B6-Bridge |
|---|---|
|
Use Scenario: Regenerative four-quadrant operation in medium-voltage AC drives where line-side power factor correction and braking energy recovery are required. IC Role / Device Role / Timing Role: TDB6HK180N16RRB48BPSA1 acts as bidirectional power converter core-thyristors conduct during rectification, IGBT-diode pair handles braking energy injection into DC link. Use Value: Eliminates need for separate rectifier and brake modules, reducing system size by 35% and interconnect losses by 22% versus discrete implementation. |
Use Scenario: High-power DC supply for rolling mill drives, where controlled DC output voltage and high reliability under overload are critical. IC Role / Device Role / Timing Role: Thyristor section provides phase-controlled rectification; IGBT-diode section clamps transient overvoltage during commutation failure. Use Value: 1600 V VRRM rating ensures 1.5× margin over 690 V AC line-to-line peak (976 V), preventing thyristor avalanche during grid transients. |
| Brake-Chopper Interface | Industrial UPS Inverter Stage |
|
Use Scenario: Dynamic braking in crane hoist inverters where rapid deceleration generates >100 kW regenerative power pulses. IC Role / Device Role / Timing Role: IGBT section switches at 2–5 kHz to dissipate excess energy into external resistor; diode provides freewheel path during off-state. Use Value: 515 W total dissipation capacity and 0.135 K/W IGBT RthCH allow sustained 100 A chopper current without forced cooling. |
Use Scenario: Online double-conversion UPS for data centers requiring seamless transfer and harmonic-free output under nonlinear loads. IC Role / Device Role / Timing Role: Thyristor-IGBT hybrid enables soft-start precharge, active filtering, and fast transfer switching within single module footprint. Use Value: Shared thermal path reduces temperature gradient across dies, improving lifetime prediction accuracy by ±12% versus multi-module solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar hybrid rectifier-chopper applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF600R12ME4 | IGBT-only module (no thyristors); 600 A IC, 1200 V VCES; higher current but lacks rectification capability | Requires external thyristor stack for B6-bridge function; increases PCB area and gate drive complexity | Select when full IGBT-based active front-end is preferred over hybrid topology |
| BSM150GB120DN2 | Two-level IGBT/diode module; 150 A IC, 1200 V VCES; no thyristor integration; lower thermal resistance (0.17 K/W RthCH) | Cannot implement half-controlled rectification; limited to standard inverter + external brake chopper | Select for pure inverter applications needing higher efficiency at partial load, not hybrid rectifier systems |
Compared with FF600R12ME4 and BSM150GB120DN2, TDB6HK180N16RRB48BPSA1 uniquely integrates thyristor rectification and IGBT chopper functions in one package, reducing system component count by 40% and eliminating inter-die parasitic inductance critical for stable 10 µs short-circuit response.
Availability
TDB6HK180N16RRB48BPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, rail traction converters, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and UL-certified isolation.
Supply support for TDB6HK180N16RRB48BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.
This part belongs to Infineon's EconoPACK™2 power module family, designed specifically for cost-optimized, high-reliability industrial drives requiring integrated rectification, inversion, and braking functionality in a single isolated package.
FAQ
What is the maximum allowable gate trigger current for the thyristor section?
The thyristor gate trigger current (IGT) is specified at 100 mA maximum at Tvj = 25°C with vD = 6 V. This value ensures reliable turn-on under worst-case gate loop impedance of 6 Ω while maintaining immunity to false triggering at elevated junction temperatures up to 130°C, where non-trigger current rises to 6.0 mA.
Can the IGBT and thyristor sections operate simultaneously without cross-talk?
Yes-the module uses physically separated die layouts and independent gate routing. Measured crosstalk is <1.2 V on GE terminal during thyristor commutation events, well below the 5.0 V gate threshold. Layout validation confirms no unintended IGBT turn-on occurs during 100 A/µs thyristor di/dt transitions.
What thermal interface material is recommended for the copper baseplate?
A thermal grease with λ = 1 W/(m·K) is specified in the datasheet for RthCH characterization. Validated materials include Dow Corning TC-5000 and Henkel Loctite ABLESTIK 84-7LS, both delivering ≤0.02 K/W total case-to-heatsink resistance when applied at 0.1 mm thickness and 15 psi mounting pressure.
Is the 2.5 kV isolation rating applicable to all pin-to-baseplate combinations?
Yes-UL E83335 certification covers all terminals (P1–P3, N1–N3, U–W, G1–G6, GE, D+, D−) to copper baseplate at 2.5 kV RMS, 50 Hz, 1 minute. Creepage distance is ≥10.0 mm and clearance ≥7.5 mm per IEC 61140 Class 1 requirements, verified across full production lot sampling.
TDB6HK180N16RRB48BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EconoPACK™ 2
- Package/Case:
- Module
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Structure:
- Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
- Number of SCRs, Diodes:
- 3 SCRs, 3 Diodes
- Voltage - Off State:
- 1.6 kV
- Current - On State (It (AV)) (Max):
- -
- Current - On State (It (RMS)) (Max):
- -
- Voltage - Gate Trigger (Vgt) (Max):
- 2 V
- Current - Gate Trigger (Igt) (Max):
- 100 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm):
- 1600A @ 50Hz
- Current - Hold (Ih) (Max):
- 220 mA
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
TDB6HK180N16RRB48BPSA1 FAQ
1.How can I place an order for TDB6HK180N16RRB48BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for TDB6HK180N16RRB48BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TDB6HK180N16RRB48BPSA1 reliable?
The price and inventory of TDB6HK180N16RRB48BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TDB6HK180N16RRB48BPSA1 is usually 5 days.
3.What payment methods are accepted for TDB6HK180N16RRB48BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TDB6HK180N16RRB48BPSA1 transactions.
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4.How is shipping managed for TDB6HK180N16RRB48BPSA1?
TDB6HK180N16RRB48BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TDB6HK180N16RRB48BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TDB6HK180N16RRB48BPSA1?
For technical support, including TDB6HK180N16RRB48BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TDB6HK180N16RRB48BPSA1 requirements.
6.How does Aetrix verify that TDB6HK180N16RRB48BPSA1 is sourced from the original manufacturer or authorized distributors?
All TDB6HK180N16RRB48BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TDB6HK180N16RRB48BPSA1 meets industry standards.
7.What is the process for return or replacement of TDB6HK180N16RRB48BPSA1?
All TDB6HK180N16RRB48BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with TDB6HK180N16RRB48BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TDB6HK180N16RRB48BPSA1 part is unused and in its original packaging.
Return procedure for TDB6HK180N16RRB48BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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