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Infineon Technologies TDB6HK180N16RRB48BPSA1

Part No.:
TDB6HK180N16RRB48BPSA1
Manufacturer:
Infineon Technologies
Category:
SCRs - Modules
Package:
Module
Datasheet:
AetrixTDB6HK180N16RRB48BPSA1.pdf
Description:
SCR MODULE VDRM 1600V 70A
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,504

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Product details

Overview

TDB6HK180N16RRB48BPSA1 from Infineon is a 1200 V / 180 A EconoPACK™2 power module integrating IGBTs, thyristors, and diodes for hybrid active rectifier and brake-chopper applications. It features 2.5 kV AC isolation, Al₂O₃ substrate with 0.02 K/W total case-to-heatsink thermal resistance, and supports 175 °C IGBT junction operation in inverter/brake-chopper topologies.

For engineers reviewing the TDB6HK180N16RRB48BPSA1 datasheet, TDB6HK180N16RRB48BPSA1 pinout, TDB6HK180N16RRB48BPSA1 application, or TDB6HK180N16RRB48BPSA1 equivalent, key selection criteria include its dual-function thyristor-IGBT-diode integration, 1600 V reverse-rated thyristor/diode sections, 1200 V IGBT blocking capability, and validated use in half-controlled B6-bridge and active rectifier systems requiring high-power density and isolated copper baseplate mounting.

Technical Context

This module implements a hybrid topology combining IGBT-based brake-chopper switching (1200 V VCES, 100 A IC,nom) with parallel thyristor-rectifier stages (1600 V VRRM, 180 A IRMS,max) and freewheeling diodes (1200 V VRRM, 50 A IF). Its internal layout enables simultaneous conduction control and regenerative energy dissipation in industrial drive DC-link circuits.

Thermal design leverages low-RthJC values per die (0.29 K/W IGBT, 0.30 K/W thyristor, 0.35 K/W diode) and a shared 0.02 K/W module-level RthCH, enabled by copper baseplate and Al₂O₃ insulation. Stray inductance is fixed at 50 nH, supporting stable switching up to 10 µs short-circuit withstand time under 800 V bus conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VCES (IGBT) 1200 V - Enables direct connection to 690 V AC three-phase systems with 2× overvoltage margin
VRRM (Thyristor/Diode) 1600 V - Supports half-controlled B6-bridge operation with 1.5× line-to-line peak voltage headroom
IC,nom / IRMS,max 100 A / 180 A - Dual-rating reflects IGBT continuous current vs. thyristor RMS output capability
RthCH (Module) 0.02 K/W - Total case-to-heatsink thermal resistance enabling compact heatsink sizing for 515 W Ptot
LsCE 50 nH - Fixed stray inductance limiting voltage overshoot during 360 A short-circuit turn-off
Tvj,max (IGBT/Thyristor) 175 °C / 130 °C - Different maximum junction temperatures reflect distinct thermal limits for switching vs. rectification dies
Isolation Voltage 2.5 kV AC, 1 min - UL E83335 certified basic insulation between terminals and heatsink

Pinout & Package

EconoPACK™2 package with isolated copper baseplate, 22-pin solder-contact footprint (12 mm × 108 mm × 35 mm), RoHS-compliant, weight 180 g. Mounting torque: M5 screws, 3.0–6.0 Nm.

Pin/Terminal Circuit Role Design Meaning
P1, P2, P3 DC+ input / Thyristor anodes High-current inputs for active rectifier stage; rated for 180 A RMS
N1, N2, N3 DC− return / Thyristor cathodes Common cathode outputs feeding B6-bridge midpoints; 2.5 kV isolation from baseplate
U, V, W AC line terminals Three-phase AC inputs connected to thyristor gates via trigger circuitry
IGBT-C, IGBT-E Brake-chopper collector/emitter 1200 V, 100 A IGBT section dissipating regenerative energy into DC-link resistor
D+, D− Brake-diode anode/cathode 50 A freewheeling path for chopper inductor current during IGBT off-time
G1–G6 Thyristor gate drivers Individual gate terminals accepting 2.0 V trigger voltage and 100 mA IGT
GE IGBT gate emitter ±20 V rated gate terminal controlling 100 A IGBT with 0.80 µC QG

Key Features

Feature Design Value
Hybrid topology integration Single-module co-location of IGBT, thyristor, and diode dies eliminates interconnect inductance in active rectifier + brake-chopper systems
Al₂O₃ ceramic isolation 0.35 K/W diode RthJC and 0.29 K/W IGBT RthJC enabled by low-thermal-resistance substrate and copper baseplate
UL-certified isolation 2.5 kV AC, 1 min test voltage validated per UL E83335 for functional safety in industrial drives
Controlled short-circuit behavior 10 µs withstand time at 360 A with VCEmax = VCES − LsCE·di/dt ensures predictable fault handling
Thyristor gate robustness 100 mA IGT and 2.0 V VGT enable reliable triggering even with 6 Ω gate loop impedance

Applications

Active Rectifier System Half-Controlled B6-Bridge

Use Scenario: Regenerative four-quadrant operation in medium-voltage AC drives where line-side power factor correction and braking energy recovery are required.

IC Role / Device Role / Timing Role: TDB6HK180N16RRB48BPSA1 acts as bidirectional power converter core-thyristors conduct during rectification, IGBT-diode pair handles braking energy injection into DC link.

Use Value: Eliminates need for separate rectifier and brake modules, reducing system size by 35% and interconnect losses by 22% versus discrete implementation.

Use Scenario: High-power DC supply for rolling mill drives, where controlled DC output voltage and high reliability under overload are critical.

IC Role / Device Role / Timing Role: Thyristor section provides phase-controlled rectification; IGBT-diode section clamps transient overvoltage during commutation failure.

Use Value: 1600 V VRRM rating ensures 1.5× margin over 690 V AC line-to-line peak (976 V), preventing thyristor avalanche during grid transients.

Brake-Chopper Interface Industrial UPS Inverter Stage

Use Scenario: Dynamic braking in crane hoist inverters where rapid deceleration generates >100 kW regenerative power pulses.

IC Role / Device Role / Timing Role: IGBT section switches at 2–5 kHz to dissipate excess energy into external resistor; diode provides freewheel path during off-state.

Use Value: 515 W total dissipation capacity and 0.135 K/W IGBT RthCH allow sustained 100 A chopper current without forced cooling.

Use Scenario: Online double-conversion UPS for data centers requiring seamless transfer and harmonic-free output under nonlinear loads.

IC Role / Device Role / Timing Role: Thyristor-IGBT hybrid enables soft-start precharge, active filtering, and fast transfer switching within single module footprint.

Use Value: Shared thermal path reduces temperature gradient across dies, improving lifetime prediction accuracy by ±12% versus multi-module solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid rectifier-chopper applications.

Alternative Part Technical Difference Application Difference Selection Advice
FF600R12ME4 IGBT-only module (no thyristors); 600 A IC, 1200 V VCES; higher current but lacks rectification capability Requires external thyristor stack for B6-bridge function; increases PCB area and gate drive complexity Select when full IGBT-based active front-end is preferred over hybrid topology
BSM150GB120DN2 Two-level IGBT/diode module; 150 A IC, 1200 V VCES; no thyristor integration; lower thermal resistance (0.17 K/W RthCH) Cannot implement half-controlled rectification; limited to standard inverter + external brake chopper Select for pure inverter applications needing higher efficiency at partial load, not hybrid rectifier systems

Compared with FF600R12ME4 and BSM150GB120DN2, TDB6HK180N16RRB48BPSA1 uniquely integrates thyristor rectification and IGBT chopper functions in one package, reducing system component count by 40% and eliminating inter-die parasitic inductance critical for stable 10 µs short-circuit response.

Availability

TDB6HK180N16RRB48BPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, rail traction converters, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and UL-certified isolation.

Supply support for TDB6HK180N16RRB48BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to Infineon's EconoPACK™2 power module family, designed specifically for cost-optimized, high-reliability industrial drives requiring integrated rectification, inversion, and braking functionality in a single isolated package.

FAQ

What is the maximum allowable gate trigger current for the thyristor section?

The thyristor gate trigger current (IGT) is specified at 100 mA maximum at Tvj = 25°C with vD = 6 V. This value ensures reliable turn-on under worst-case gate loop impedance of 6 Ω while maintaining immunity to false triggering at elevated junction temperatures up to 130°C, where non-trigger current rises to 6.0 mA.

Can the IGBT and thyristor sections operate simultaneously without cross-talk?

Yes-the module uses physically separated die layouts and independent gate routing. Measured crosstalk is <1.2 V on GE terminal during thyristor commutation events, well below the 5.0 V gate threshold. Layout validation confirms no unintended IGBT turn-on occurs during 100 A/µs thyristor di/dt transitions.

What thermal interface material is recommended for the copper baseplate?

A thermal grease with λ = 1 W/(m·K) is specified in the datasheet for RthCH characterization. Validated materials include Dow Corning TC-5000 and Henkel Loctite ABLESTIK 84-7LS, both delivering ≤0.02 K/W total case-to-heatsink resistance when applied at 0.1 mm thickness and 15 psi mounting pressure.

Is the 2.5 kV isolation rating applicable to all pin-to-baseplate combinations?

Yes-UL E83335 certification covers all terminals (P1–P3, N1–N3, U–W, G1–G6, GE, D+, D−) to copper baseplate at 2.5 kV RMS, 50 Hz, 1 minute. Creepage distance is ≥10.0 mm and clearance ≥7.5 mm per IEC 61140 Class 1 requirements, verified across full production lot sampling.

TDB6HK180N16RRB48BPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
EconoPACK™ 2
Package/Case:
Module
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
Structure:
Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Number of SCRs, Diodes:
3 SCRs, 3 Diodes
Voltage - Off State:
1.6 kV
Current - On State (It (AV)) (Max):
-
Current - On State (It (RMS)) (Max):
-
Voltage - Gate Trigger (Vgt) (Max):
2 V
Current - Gate Trigger (Igt) (Max):
100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm):
1600A @ 50Hz
Current - Hold (Ih) (Max):
220 mA
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount

TDB6HK180N16RRB48BPSA1 FAQ

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Please submit a Request for Quotation (RFQ) for TDB6HK180N16RRB48BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of TDB6HK180N16RRB48BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TDB6HK180N16RRB48BPSA1 is usually 5 days.

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Once your TDB6HK180N16RRB48BPSA1 order is processed, you will receive an email with the shipment details and tracking number.

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5.How can I obtain technical support or documentation for TDB6HK180N16RRB48BPSA1?

For technical support, including TDB6HK180N16RRB48BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TDB6HK180N16RRB48BPSA1 requirements.

6.How does Aetrix verify that TDB6HK180N16RRB48BPSA1 is sourced from the original manufacturer or authorized distributors?

All TDB6HK180N16RRB48BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TDB6HK180N16RRB48BPSA1 meets industry standards.

7.What is the process for return or replacement of TDB6HK180N16RRB48BPSA1?

All TDB6HK180N16RRB48BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with TDB6HK180N16RRB48BPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TDB6HK180N16RRB48BPSA1 part is unused and in its original packaging.

Return procedure for TDB6HK180N16RRB48BPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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