Infineon Technologies TDB6HK180N16RRBPSA1

Overview

TDB6HK180N16RRBPSA1 from Infineon is a 1200 V, 180 A EconoPACK™2 power module integrating IGBTs, thyristors, and diodes for high-power active rectification and brake-chopper operation. It features 2.5 kV AC isolation, Al₂O₃ substrate with 0.02 K/W total case-to-heatsink thermal resistance, and copper baseplate construction for industrial motor drives and traction inverters.

For engineers reviewing the TDB6HK180N16RRBPSA1 datasheet, TDB6HK180N16RRBPSA1 pinout, TDB6HK180N16RRBPSA1 application, or TDB6HK180N16RRBPSA1 equivalent, key selection criteria include its dual-thyristor/IGBT topology, 175 °C max junction temperature for inverter section, 130 °C for rectifier section, and validated 50 nH stray inductance for low-voltage-overshoot switching.

Technical Context

This module implements a half-controlled B6-bridge configuration using six thyristor chips (1600 V V_RRM, 150 A I_FRMSM) paired with two IGBTs (1200 V V_CES, 100 A I_{C nom}) and associated freewheeling diodes (1200 V V_RRM, 50 A I_F). Its internal layout supports active rectifier operation with independent gate control of thyristors and IGBTs.

Thermal design centers on low R_thCH = 0.02 K/W (per module), enabled by copper baseplate and Al₂O₃ insulation, while electrical robustness includes 100 A/µs critical di/dt rating for thyristors and 1000 V/µs critical dv/dt rating to prevent false triggering under fast transients.

Key Specifications

Pinout & Package

EconoPACK™2 package: 42 mm × 75 mm × 17 mm copper-base insulated module with solder-contact terminals, isolated baseplate, and M5 mounting screws. Thermal interface uses λ = 1 W/(m·K) grease.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid rectifier-chopper applications.

Compared with FF600R12ME4 and BSM300GA120DN2, TDB6HK180N16RRBPSA1 uniquely integrates thyristor-based natural commutation with IGBT-based active control in one package-reducing gate driver count by 50%, eliminating external thyristor stacks, and enabling simpler active rectifier designs with lower system-level EMI.

Availability

TDB6HK180N16RRBPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, wind turbine converters, and rail traction systems requiring stable component supply across multi-year production cycles.

Supply support for TDB6HK180N16RRBPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to the EconoPACK™2 family of power modules, designed specifically for cost-sensitive industrial drives and renewable energy converters requiring integrated high-voltage, high-current switching with enhanced thermal performance.

FAQ

What is the maximum allowable gate drive voltage for the thyristor gates (G1–G6)?

The thyristor gate trigger voltage is specified at 2.0 V under standard test conditions (Tvj = 25°C, vD = 6 V). Gate drive circuits must limit peak voltage to ≤10 V to avoid gate oxide damage, and gate current must be ≥100 mA for reliable turn-on. Pulse width should exceed 10 µs to ensure latching, and gate non-trigger voltage is 0.3 V at 130°C to prevent false firing.

Can the IGBT and thyristor sections operate simultaneously in the same switching cycle?

Yes-the module supports concurrent operation: thyristors conduct during AC line commutation intervals while IGBTs switch during DC-link chopper phases. However, timing must prevent shoot-through; gate signals require strict dead-time coordination (≥1.2 µs t_gd plus 150 µs t_q for thyristor turn-off) to avoid simultaneous conduction between complementary devices on the same phase leg.

What is the recommended thermal interface material for this module?

Infineon specifies λ = 1 W/(m·K) thermal grease for R_thCH calculations. Using higher-conductivity pastes (e.g., 3–6 W/(m·K)) does not improve R_thCH below 0.02 K/W due to the dominant contribution of the Al₂O₃ isolation layer. Excessive paste volume increases bond line thickness and degrades thermal performance; 0.1 mm nominal gap thickness is optimal per application note AN2013-08.

How is short-circuit withstand time defined for the IGBT section?

The IGBT section is rated for 10 µs short-circuit withstand at V_CC = 800 V, V_GE ≤ 15 V, and T_vj = 150°C, with I_SC = 360 A. This is measured under controlled lab conditions with external desaturation detection; field implementation requires fast (<2 µs) desat monitoring and gate voltage clamping to ensure safe shutdown before thermal runaway occurs.