NXP Semiconductors TEA1610P/N5,112
- Part No.:
- TEA1610P/N5,112
- Manufacturer:
- NXP Semiconductors
- Category:
- Power Supply Controllers, Monitors
- Package:
- 16-DIP (0.300", 7.62mm)
- Datasheet:
-
TEA1610P/N5,112.pdf
- Description:
- IC RESONANT CONVERTR CTRLR 16DIP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
TEA1610P/N5,112 from NXP Semiconductors is a high-voltage DMOS monolithic controller for zero-voltage-switching (ZVS) resonant half-bridge converters. It drives two external MOSFETs, integrates a high-side level shifter and bootstrap diode, delivers 50 % duty cycle via internal ÷2 flip-flop, and supports adjustable dead time (0.37–0.43 µs), min/max bridge frequency (188–550 kHz), and latched shutdown at 2.33 V. It is used in TV/monitor power supplies operating from universal mains.
For engineers reviewing the TEA1610P/N5,112 datasheet, TEA1610P/N5,112 pinout, TEA1610P/N5,112 application, or TEA1610P/N5,112 equivalent, key selection criteria include high-side driver voltage rating (600 V), transconductance error amplifier (330 µA/mV), oscillator current programmability (IFS/IRS pins), and DIP16 package compatibility with legacy board layouts.
Technical Context
The TEA1610P/N5,112 implements a current-controlled oscillator whose frequency is set by external capacitor Cf and programmable charge/discharge currents on IRS and IFS pins - enabling precise tuning of bridge frequency between 188 kHz and 550 kHz. Its internal ÷2 logic ensures exact 50 % duty cycle at the output drivers, critical for ZVS operation in resonant LLC or series-resonant topologies.
It integrates a transconductance error amplifier (gm = 330 µA/mV) that sources current into the IRS pin to modulate oscillator frequency for output voltage regulation. The high-side driver uses an integrated bootstrap supply with built-in diode (Vd(boot) = 1.5–2.1 V) and operates up to 600 V common-mode voltage (VHS), while undervoltage lockout (VDD(start) = 12.9–13.9 V) and latched shutdown (VSD(th) = 2.26–2.40 V) provide robust protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Bridge frequency range | 188–550 kHz - sets resonant tank switching envelope for ZVS operation across input voltage variations |
| High-side driver voltage (VHS) | 0–600 V - enables direct control of high-side MOSFET in 400 V DC-link applications without external level shifters |
| Transconductance (gm) | 330 µA/mV - defines gain of feedback loop; determines sensitivity of frequency modulation to error voltage |
| Dead time (tdt) | 0.37–0.43 µs - prevents shoot-through in half-bridge; set externally via Rdt between VREF and IFS |
| Shut-down threshold (VSD(th)) | 2.26–2.40 V - provides accurate overvoltage protection trigger independent of supply rail |
| Error amplifier output (VVCO(max)) | 3.2–4.0 V - limits maximum oscillator charge current and thus upper bound of regulated frequency |
| Supply start voltage (VDD(start)) | 12.9–13.9 V - initiates oscillation only after stable VDD establishment, preventing erratic startup |
Pinout & Package
DIP16 plastic dual in-line package (SOT38-1), 300 mil body width, 16-pin through-hole mount compatible with standard wave-solder processes and legacy power supply PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| I− (Pin 1) | Error amplifier inverting input | Connects to feedback divider output; sets regulated output voltage via resistor ratio |
| I+ (Pin 2) | Error amplifier non-inverting input | Reference node for error comparison; typically tied to internal 3.0 V VREF or external precision reference |
| VCO (Pin 3) | Error amplifier output | Sources current into IRS pin to adjust oscillator frequency; open-loop gain >70 dB enables stable regulation |
| PGND (Pin 4) | Power ground | Return path for high-side driver and bootstrap circuit; must be low-inductance connection to bulk capacitor negative |
| n.c. (Pin 5) | Not connected | High-voltage spacer; no internal connection - maintain clearance per 600 V creepage requirements |
| SH (Pin 6) | High-side switch source | Connects to source of external high-side MOSFET; referenced to floating VDD(F) supply |
| GH (Pin 7) | High-side gate driver output | Drives gate of high-side MOSFET with ±180 mA sink/source; integrated bootstrap diode reduces BOM count |
| VDD(F) (Pin 8) | Floating supply for high-side driver | Charged via external bootstrap capacitor; must sustain ≥13 V under full load for reliable high-side conduction |
| SGND (Pin 9) | Signal ground | Reference for low-side driver, oscillator, and error amplifier; separate from PGND to avoid noise coupling |
| GL (Pin 10) | Low-side gate driver output | Drives gate of low-side MOSFET with ±180 mA sink/source; referenced to SGND |
| VDD (Pin 11) | Main supply input | Accepts 9–15 V; includes UVLO (12.9–13.9 V start) and shutdown clamp (11–13 V) for safe operation |
| IFS (Pin 12) | Oscillator discharge current input | Sets falling slope of oscillator sawtooth and thus dead time; current programmed via Rdt |
| CF (Pin 13) | Oscillator timing capacitor | External capacitor (e.g., 100–220 pF) that defines oscillator period; placed close to IC for stability |
| IRS (Pin 14) | Oscillator charge current input | Sets rising slope of oscillator sawtooth; combined with IFS and CF to determine bridge frequency |
| SD (Pin 15) | Shut-down input | Latched disable: pulls both drivers low when voltage ≥2.33 V; reset requires VDD <5.3 V |
| VREF (Pin 16) | 3.0 V reference output | Stable 2.9–3.1 V source for biasing Rf(min), Rdt, and R∆f; tempco −0.3 mV/K ensures accuracy over temperature |
Key Features
| Feature | Design Value |
|---|---|
| Integrated high-voltage level shifter | Enables direct drive of high-side MOSFET up to 600 V without external isolators or transformers |
| Transconductance error amplifier | 330 µA/mV gain allows ultra-high-impedance feedback networks (e.g., >1 MΩ dividers) without stability loss |
| Adjustable dead time | Externally set via single resistor Rdt between VREF and IFS, eliminating need for timing ICs or complex compensation |
| Latched shut-down | Irreversible disable until VDD drops below 5.3 V - prevents uncontrolled restart during overvoltage fault conditions |
| Low start-up current (130–220 µA) | Reduces bleeder resistor power loss in standby mode, supporting Energy Star and EU CoC Tier 2 efficiency requirements |
Applications
| TV Power Supplies | Monitor Power Supplies |
|---|---|
Use Scenario: 100–200 W off-line resonant power supply for LCD/LED TV main board and backlight drivers. IC Role / Device Role / Timing Role: ZVS resonant controller managing half-bridge switching at 200–500 kHz to minimize EMI and conduction losses. Use Value: Enables >90 % efficiency at full load and <0.5 W no-load consumption due to low start-up current and precise dead-time control. |
Use Scenario: Compact 65–120 W power supply for desktop monitors with wide-input (90–264 VAC) and PFC front-end integration. IC Role / Device Role / Timing Role: Primary-side resonant controller synchronizing with secondary-side synchronous rectification for tight voltage regulation. Use Value: Delivers ±1 % output voltage stability across line/load/temperature using transconductance error amplifier and 3.0 V reference. |
| Industrial HV Power Supplies | Medical Display Power Modules |
Use Scenario: 150 W high-reliability power supply for industrial HMIs and control panels requiring continuous operation at 70 °C ambient. IC Role / Device Role / Timing Role: Resonant converter controller with thermal-aware design, leveraging Rth(j-a) = 100 K/W and 70 °C max operating temperature. Use Value: Maintains ZVS operation across temperature via programmable frequency range, reducing MOSFET stress and improving MTBF. |
Use Scenario: Isolated auxiliary power module for medical imaging displays requiring low leakage current and reinforced insulation. IC Role / Device Role / Timing Role: Primary-side controller with galvanically isolated feedback via optocoupler connected to I−/I+ inputs. Use Value: Supports Class II (double-insulated) designs with <30 µA high-side leakage (VHS = 600 V) and latch-off safety shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar zero-voltage-switching resonant converter controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TEA1610T/N5,118 | SO16 surface-mount package (SOT109-2); identical electrical specs and pinout mapping but different thermal resistance (Rth(j-pin) = 50 K/W vs. 65 K/W for DIP16) | Requires rework of PCB layout for SMT assembly; better suited for space-constrained, high-density designs | Select TEA1610T/N5,118 when automated SMT production and smaller footprint are prioritized over through-hole serviceability. |
| UCC256301DR | TI LLC resonant controller with integrated 600 V high-side driver, digital frequency control, and soft-start; no external oscillator components required | Targets higher-efficiency (>93 %) and lower EMI designs; lacks latched shutdown and fixed 50 % duty-cycle guarantee | Choose UCC256301DR when digital programmability, faster transient response, and integrated protections outweigh cost and design simplicity advantages of TEA1610P/N5,112. |
Compared with TEA1610T/N5,118, the TEA1610P/N5,112 offers superior thermal dissipation in free-air environments and mechanical robustness for field-serviceable power supplies; versus UCC256301DR, it provides deterministic analog timing, lower BOM count, and proven reliability in cost-sensitive consumer display applications.
Availability
TEA1610P/N5,112 is available at Aetrix Electronics and suitable for TV power supplies, monitor power supplies, and industrial high-voltage power supplies requiring stable component supply, long-term lifecycle support, and legacy DIP16 footprint compatibility.
Supply support for TEA1610P/N5,112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and consumer electronics, with core expertise in high-voltage analog and mixed-signal ICs.
The TEA1610 product line was designed specifically for cost-effective, high-efficiency resonant AC-DC power conversion in display and industrial power supplies, emphasizing robustness, programmability, and ease of implementation in ZVS topologies.
FAQ
What is the function of the n.c. pin (Pin 5) on the TEA1610P/N5,112?
Pin 5 is explicitly designated as "not connected" and serves as a high-voltage spacer to ensure adequate creepage distance between adjacent pins under 600 V operating conditions. It has no internal connection and must remain unconnected on the PCB. This design feature maintains isolation integrity in high-side driver circuits where SH (Pin 6) operates at up to 600 V relative to PGND (Pin 4), as confirmed in the official NXP datasheet section 7.2.
How does the TEA1610P/N5,112 achieve zero-voltage switching in a resonant half-bridge?
The TEA1610P/N5,112 achieves ZVS by precisely controlling bridge frequency (188–550 kHz) to track the resonant tank's natural frequency, ensuring MOSFETs switch only when drain-source voltage crosses zero. Its current-controlled oscillator, adjustable dead time (0.37–0.43 µs), and 50 % duty cycle guarantee via internal ÷2 logic collectively enable soft-switching across line/load variations - directly stated in the General Description and Functional Description sections of the NXP datasheet.
Can the TEA1610P/N5,112 be used with a 220 pF oscillator capacitor?
Yes, the TEA1610P/N5,112 supports CF values including 220 pF, as validated in Figure 9 of the NXP datasheet showing measured oscillator frequency vs. IIRS for Cf = 220 pF. This value shifts the operational frequency range downward compared to 100 pF, enabling lower-frequency ZVS operation (e.g., ~200–400 kHz) while maintaining stability - consistent with the fbridge(min) and fbridge(max) specifications under varying CF conditions.
What is the purpose of the VREF pin (Pin 16) on the TEA1610P/N5,112?
VREF (Pin 16) provides a precision 2.9–3.1 V reference with −0.3 mV/K temperature coefficient, used to bias the Rdt, Rf(min), and R∆f resistors that program dead time, minimum frequency, and maximum frequency. Its 1 mA sink capability and low output impedance (<5 Ω) ensure stable current sourcing into these timing networks - a key enabler of accurate, temperature-stable ZVS control as detailed in Sections 8.3–8.5 of the datasheet.
Does the TEA1610P/N5,112 include an integrated bootstrap diode?
Yes, the TEA1610P/N5,112 integrates a bootstrap diode with a forward voltage drop of 1.5–2.1 V at 5 mA, as specified in Table 6 of the NXP datasheet. This eliminates the need for an external diode in the high-side floating supply path, reducing component count and PCB area - a confirmed feature listed in the "Features" section and functional block diagram (Figure 2).
TEA1610P/N5,112 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 16-DIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Applications:
- Resonant Converter Controller
- Voltage - Input:
- -
- Voltage - Supply:
- 0V ~ 15V
- Current - Supply:
- 2.4 mA
- Operating Temperature:
- -25°C ~ 70°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 16-DIP
TEA1610P/N5,112 FAQ
1.How can I place an order for TEA1610P/N5,112 through Aetrix?
Please submit a Request for Quotation (RFQ) for TEA1610P/N5,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TEA1610P/N5,112 reliable?
The price and inventory of TEA1610P/N5,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TEA1610P/N5,112 is usually 5 days.
3.What payment methods are accepted for TEA1610P/N5,112?
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TEA1610P/N5,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TEA1610P/N5,112 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TEA1610P/N5,112?
For technical support, including TEA1610P/N5,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TEA1610P/N5,112 requirements.
6.How does Aetrix verify that TEA1610P/N5,112 is sourced from the original manufacturer or authorized distributors?
All TEA1610P/N5,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TEA1610P/N5,112 meets industry standards.
7.What is the process for return or replacement of TEA1610P/N5,112?
All TEA1610P/N5,112 units undergo pre-shipment inspection (PSI). If there is an issue with TEA1610P/N5,112, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TEA1610P/N5,112 part is unused and in its original packaging.
Return procedure for TEA1610P/N5,112:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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