NXP Semiconductors TEA1610P/N6,112

Overview

TEA1610P/N6,112 from NXP Semiconductors is a high-voltage DMOS IC controller for zero-voltage-switching (ZVS) resonant half-bridge converters. It drives two external power MOSFETs, integrates a high-side level shifter and bootstrap diode, provides transconductance error amplification with 330 µA/mV gm, and delivers latched shutdown at 2.33 V on SD pin - used in TV/monitor and high-voltage AC-DC power supplies.

For engineers reviewing the TEA1610P/N6,112 datasheet, TEA1610P/N6,112 pinout, TEA1610P/N6,112 application, or TEA1610P/N6,112 equivalent, key selection criteria include its 450–550 kHz max bridge frequency range, 600 V high-side driver voltage rating, adjustable dead time via R_dt, undervoltage lockout (13.4 V start), and 50 % duty cycle accuracy via internal ÷2 flip-flop.

Technical Context

The TEA1610P/N6,112 implements a current-controlled oscillator whose frequency is set by external capacitor C_f and charge/discharge currents into IRS and IFS pins; oscillator output is divided by two to ensure precise 50 % duty cycle at gate drivers. Its transconductance error amplifier (gm = 330 µA/mV) sources up to 0.5 mA into IRS to modulate frequency for output regulation.

It features integrated high-voltage level shifting for floating high-side drive, a latched shutdown circuit triggered at 2.33 V on SD, and startup sequencing that first enables the low-side driver to charge the bootstrap capacitor before enabling oscillation - ensuring reliable high-side operation without external level-shift components.

Key Specifications

Pinout & Package

DIP16 package (SOT38-1): plastic dual in-line, 16-pin, 300 mil width, long-body through-hole format suitable for high-voltage isolation and thermal management in offline power supplies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar resonant converter controller applications.

Compared with TEA1610P/N6,112, TEA1611P/N6,112 offers enhanced startup behavior and lighter standby draw, while UCC256301DR provides digital adaptability and integrated LLC timing - making TEA1610P/N6,112 optimal for cost-sensitive, analog-tuned ZVS half-bridge implementations where proven reliability and design simplicity are prioritized.

Availability

TEA1610P/N6,112 is available at Aetrix Electronics and suitable for TV/monitor power supplies, high-voltage industrial AC-DC converters, and LED street lighting drivers requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for TEA1610P/N6,112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions, automotive processors, and high-performance analog/power ICs.

The TEA1610P/N6,112 belongs to NXP's GreenChip™ resonant controller family, designed specifically for high-efficiency, low-EMI offline power conversion in consumer and industrial applications with stringent energy efficiency mandates.

FAQ

What is the maximum bridge switching frequency supported by the TEA1610P/N6,112?

The TEA1610P/N6,112 supports a maximum bridge frequency of 550 kHz under specified conditions (C_f = 100 pF, I_IFS = 1 mA, I_IRS = 200 µA). This corresponds to an oscillator frequency of 1.1 MHz, which is internally divided by two to achieve precise 50 % duty cycle. Operation above 500 kHz may reduce ZVS margin and increase gate drive losses due to propagation delays.

How does the TEA1610P/N6,112 implement zero-voltage switching in a half-bridge topology?

The TEA1610P/N6,112 achieves zero-voltage switching by modulating the bridge frequency in response to output load and line conditions - lowering frequency under heavy load to extend resonant tank ring time and ensure MOSFETs turn on only when drain-source voltage has decayed to near zero. Its adjustable dead time (via R_dt) and precise 50 % duty cycle prevent overlap and maintain soft-switching integrity across the operating range.

Can the TEA1610P/N6,112 operate without an external bootstrap capacitor?

No - the TEA1610P/N6,112 requires an external bootstrap capacitor connected between VDD(F) and SH pins to supply the high-side gate driver. Although it integrates a bootstrap diode (V_f ≈ 1.8 V), the capacitor stores energy during low-side conduction to power the high-side driver during its active phase. Omitting it will result in insufficient high-side gate voltage and converter failure.

What is the function of the VREF pin (Pin 16) on the TEA1610P/N6,112?

The VREF pin on the TEA1610P/N6,112 provides a precision 3.0 V ±0.1 V reference used to bias the dead time resistor (R_dt), minimum frequency resistor (R_f(min)), and maximum frequency resistor (R_∆f). Its −0.3 mV/K temperature coefficient ensures stable oscillator timing across ambient temperatures, and its 1 mA sink capability supports direct resistor connections without buffering.

Does the TEA1610P/N6,112 include built-in overcurrent protection?

The TEA1610P/N6,112 does not feature direct current-sense inputs or cycle-by-cycle overcurrent protection. Instead, it provides latched overvoltage protection via the SD pin and relies on external circuitry (e.g., voltage across a sense resistor feeding SD or a dedicated comparator) to detect overcurrent conditions and assert shutdown. Its datasheet specifies "latched shut-down for overcurrent and overvoltage protection" as a system-level capability enabled by proper external implementation.