NXP Semiconductors TEA1610T/N6,518

Overview

TEA1610T/N6,518 from NXP Semiconductors is a high-voltage zero-voltage-switching (ZVS) resonant converter controller implemented in DMOS process. It drives two external MOSFETs in half-bridge topology, integrates high-side level-shift and bootstrap diode, features adjustable 188–550 kHz bridge frequency range, 50% duty cycle via internal ÷2 flip-flop, and latched shutdown for overvoltage/overcurrent protection. It is used in TV and monitor power supplies requiring high-efficiency, low EMI AC-DC conversion.

For engineers reviewing the TEA1610T/N6,518 datasheet, TEA1610T/N6,518 pinout, TEA1610T/N6,518 application, or TEA1610T/N6,518 equivalent, key selection considerations include its 600 V high-side driver capability, transconductance error amplifier with 330 µA/mV gm, programmable dead time via R_dt, undervoltage lockout (13.4 V start / 9.4 V stop), and SO16 package compatibility with space-constrained board layouts.

Technical Context

The TEA1610T/N6,518 employs a current-controlled oscillator whose frequency is set by external capacitor C_f and charge/discharge currents at IRS and IFS pins; oscillator output is divided by two to ensure precise 50% bridge duty cycle. Its integrated high-voltage level shifter enables direct gate drive of the floating high-side MOSFET using a bootstrap supply referenced to SH.

Control is achieved via a transconductance error amplifier (gm = 330 µA/mV) that sources current into the IRS pin to modulate oscillator frequency; regulation uses frequency variation rather than PWM. The latched shutdown circuit responds to 2.33 V threshold on SD pin and clamps VDD at 12.0 V during fault condition.

Key Specifications

Pinout & Package

TEA1610T/N6,518 is supplied in SO16 package (SOT109-2): plastic small outline, 16 leads, 3.9 mm body width, low stand-off height - optimized for automated assembly and thermal performance in compact power supplies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zero-voltage-switching resonant converter controller applications.

Compared with TEA1610T/N6,518, TEA1611T/N6,518 integrates the high-side switch but sacrifices MOSFET selection freedom, while UCC256301DR offers digital adaptability at the cost of analog design simplicity and legacy compatibility.

Availability

TEA1610T/N6,518 is available at Aetrix Electronics and suitable for TV power supplies, monitor power supplies, and high-voltage industrial PSUs requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for TEA1610T/N6,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The TEA1610T/N6,518 belongs to NXP's high-voltage analog power controller product line, designed specifically for resonant-mode AC-DC conversion in energy-efficient consumer and industrial power supplies.

FAQ

What is the function of the n.c. pin (Pin 5) on the TEA1610T/N6,518?

Pin 5 on the TEA1610T/N6,518 is explicitly designated as "not connected" and serves as a high-voltage spacer between adjacent pins. It has no internal connection to any circuitry and must remain unconnected in all designs. Routing traces or placing vias near this pin is discouraged to maintain creepage and clearance integrity in high-voltage sections of the PCB layout.

How does the TEA1610T/N6,518 achieve zero-voltage switching in practice?

The TEA1610T/N6,518 achieves zero-voltage switching by controlling the half-bridge switching frequency to match the resonant tank (L_r/C_r) natural frequency. Its current-controlled oscillator adjusts frequency dynamically based on feedback from the error amplifier, ensuring MOSFETs switch only when drain-source voltage crosses zero - reducing switching losses and EMI. This requires careful tuning of C_f, R_dt, R_f(min), and R_∆f per the application circuit in Figure 10.

Can the TEA1610T/N6,518 operate without an external bootstrap capacitor?

No - the TEA1610T/N6,518 requires an external bootstrap capacitor connected between VDD(F) (Pin 8) and SH (Pin 6) to power the high-side driver. Although it integrates a bootstrap diode (V_f = 1.5–2.1 V), the capacitor stores energy during low-side conduction to sustain the high-side gate drive voltage. Omitting it will result in immediate high-side driver failure and potential MOSFET shoot-through.

What is the maximum allowable value for the CF capacitor on the TEA1610T/N6,518?

The TEA1610T/N6,518 datasheet specifies no absolute upper limit for the CF capacitor, but practical operation constrains it to ≤220 pF. Larger values reduce oscillator frequency and dead time resolution, degrading ZVS performance and increasing minimum operating frequency beyond usable range. Application Note AN99011 and Figure 9 confirm stable operation with C_f = 100–220 pF; values above 220 pF risk instability and insufficient dead time margin.

Does the TEA1610T/N6,518 support synchronous rectification?

No - the TEA1610T/N6,518 does not provide dedicated control outputs or timing signals for synchronous rectification. It is designed exclusively as a primary-side half-bridge ZVS controller driving two external MOSFETs. Secondary-side synchronous rectification would require an independent controller (e.g., TI UCC24612 or ON Semi NCP4306) with appropriate sensing and timing logic.