NXP Semiconductors TEA1610T/N6/DG,518

Overview

TEA1610T/N6/DG,518 from NXP Semiconductors is a high-voltage zero-voltage-switching (ZVS) resonant converter controller implemented in DMOS process, designed to drive two discrete MOSFETs in half-bridge topology. It integrates a level-shift circuit, transconductance error amplifier, latched shutdown, and oscillator with programmable frequency range (188–550 kHz bridge frequency), enabling stable operation across varying mains voltages in TV/monitor power supplies.

For engineers reviewing the TEA1610T/N6/DG,518 datasheet, TEA1610T/N6/DG,518 pinout, TEA1610T/N6/DG,518 application, or TEA1610T/N6/DG,518 equivalent, key selection criteria include high-side driver voltage rating (600 V), adjustable dead time via R_dt, 50 % duty cycle accuracy via internal ÷2 flip-flop, undervoltage lockout (13.4 V start, 9.4 V stop), and bootstrap diode integration for floating supply generation.

Technical Context

The TEA1610T/N6/DG,518 employs a current-controlled oscillator whose frequency is set by external capacitor C_f and charge/discharge currents at IRS and IFS pins, with bridge frequency precisely half the oscillator frequency due to internal divide-by-two logic. Its transconductance error amplifier (g_m = 330 µA/mV) delivers up to 0.5 mA output current to regulate frequency-based output voltage.

Startup initiates with low-side MOSFET conduction only, charging the bootstrap capacitor (C_boot) before full half-bridge operation begins at V_DD ≥ 13.4 V; shutdown is latched at SD = 2.33 V, clamping V_DD to 12.0 V and requiring V_DD ≤ 5.3 V to reset. The IC supports ZVS operation through precise dead-time control (0.37–0.43 µs) and high-side driver capability up to 600 V with −225 mA source / 300 mA sink current.

Key Specifications

Pinout & Package

TEA1610T/N6/DG,518 is housed in SO16 (SOT109-2) package: plastic small outline, 16 leads, 3.9 mm body width, low stand-off height - suitable for automated SMT assembly and high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zero-voltage-switching resonant converter controller applications.

Compared with TEA1610T/N6/DG,518, TEA1611T offers integrated high-side switching but sacrifices discrete MOSFET optimization, while UCC256301DR provides advanced protection features at the cost of reduced analog dead-time control - making TEA1610T/N6/DG,518 optimal for cost-sensitive, field-proven ZVS half-bridge designs requiring manual frequency/DT tuning.

Availability

TEA1610T/N6/DG,518 is available at Aetrix Electronics and suitable for TV power supplies, monitor power supplies, and industrial high-voltage power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for TEA1610T/N6/DG,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-performance mixed-signal ICs for automotive, industrial, and consumer power electronics.

The TEA1610T/N6/DG,518 belongs to NXP's GreenChip™ resonant controller product line, engineered specifically for energy-efficient, low-EMI AC/DC power conversion in display and high-voltage auxiliary supplies.

FAQ

What is the maximum high-side voltage rating supported by the TEA1610T/N6/DG,518?

The TEA1610T/N6/DG,518 supports a high-side driver voltage (V_HS) up to 600 V, enabling direct interface with high-voltage half-bridge MOSFETs in offline resonant converters. This rating is specified in the Absolute Maximum Ratings table and validated under continuous operation with proper heatsinking and layout isolation per NXP's application note AN99011. The TEA1610T/N6/DG,518 maintains functional integrity up to this voltage without external level-shifting circuitry.

How does the TEA1610T/N6/DG,518 achieve accurate 50 % duty cycle in half-bridge operation?

The TEA1610T/N6/DG,518 achieves precise 50 % duty cycle by routing the oscillator signal through an internal divide-by-two flip-flop before feeding it to the output drivers. This ensures symmetrical timing between high-side and low-side gate drive signals, eliminating duty-cycle drift caused by oscillator asymmetry or propagation delays. The TEA1610T/N6/DG,518 datasheet confirms this architecture in Section 1 ("General description") and Figure 2 (block diagram), where the ÷2 block precedes both HIGH SIDE DRIVER and LOW SIDE DRIVER blocks.

Can the TEA1610T/N6/DG,518 operate without an external bootstrap capacitor?

No - the TEA1610T/N6/DG,518 requires an external bootstrap capacitor (C_boot) connected between V_DD(F) and SH pins to generate the floating supply for the high-side driver. Although the IC integrates a bootstrap diode, the capacitor is mandatory to sustain gate drive voltage during high-side conduction. Startup relies on initial low-side conduction to charge C_boot, as detailed in Section 8.1 ("Start-up") of the TEA1610T/N6/DG,518 datasheet.

What is the purpose of the n.c. (Pin 5) on the TEA1610T/N6/DG,518 SO16 package?

Pin 5 of the TEA1610T/N6/DG,518 is designated "n.c." (not connected) and serves as a high-voltage spacer between PGND (Pin 4) and SH (Pin 6) to enhance creepage and clearance in high-voltage PCB layouts. It has no internal connection and must remain unconnected and unstubbed. This design choice improves isolation integrity in 600 V-rated applications, as confirmed in Table 3 ("Pin description") and Figure 4 ("Pin configuration for TEA1610T") of the TEA1610T/N6/DG,518 datasheet.

How is shutdown reset after activation of the TEA1610T/N6/DG,518 latched shutdown function?

After latched shutdown activation (triggered at SD = 2.33 V), the TEA1610T/N6/DG,518 remains in shutdown until V_DD drops below the reset threshold of 5.3 V (typical). This reset condition releases the internal latch, allowing a new start-up cycle to begin once V_DD rises above 13.4 V. The V_DD(reset) parameter is specified in Table 6 ("Characteristics") and illustrated in Figure 8 ("Shut-down"), confirming that the TEA1610T/N6/DG,518 requires intentional power cycling or controlled V_DD discharge to recover.