NXP Semiconductors TEA1612T/N1,518

Overview

TEA1612T/N1,518 from NXP Semiconductors is a high-voltage resonant converter controller IC implemented in DMOS process, designed to drive two external MOSFETs in a half-bridge ZVS topology. It integrates level-shift circuitry, a current-controlled oscillator with 156–485 kHz bridge frequency range, latched shutdown, burst-mode operation, and transconductance error amplifier with 330 µA/mV gm. Used in TV/monitor power supplies requiring low standby power and high efficiency.

For engineers reviewing the TEA1612T/N1,518 datasheet, TEA1612T/N1,518 pinout, TEA1612T/N1,518 application, or TEA1612T/N1,518 equivalent, key selection criteria include its adjustable non-overlap time (0.63 µs typ), integrated bootstrap diode (VF = 1.6 V typ), 2.33 V precise SD threshold, 12.6 V regulated VDD output, and SO24 package compatibility with high-side floating drive requirements.

Technical Context

The TEA1612T/N1,518 employs a current-controlled oscillator where bridge frequency is set by external Cf, IFS, and IRS currents - enabling precise 50 % duty cycle via internal divide-by-two flip-flop. Its transconductance error amplifier (gm = 330 µA/mV) delivers up to −0.5 mA output current and interfaces directly with the IRS pin for frequency modulation.

Burst mode is triggered when BURST pin voltage exceeds 1.8 V, disabling GL/GH outputs until HYST pin voltage drops below threshold; brownout detection activates at 1.25 V on BO pin with 16 µA hysteresis current. Overcurrent protection uses OCP pin (305 mV threshold) to charge CT capacitor, initiating latch shutdown if CT reaches 3.0 V.

Key Specifications

Pinout & Package

TEA1612T/N1,518 is housed in a plastic small outline package (SO24) per SOT137-1 standard, 24-pin, 7.5 mm body width, with 1.27 mm pitch and exposed thermal pad not electrically connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar resonant converter controller applications.

Compared with UCC256301DR and ICE2HS01G, the TEA1612T/N1,518 uniquely combines integrated bootstrap diode, VAUX-assisted start-up, and dual-threshold burst mode - enabling lower BOM count and superior standby performance in TV/monitor PSUs without sacrificing design flexibility.

Availability

TEA1612T/N1,518 is available at Aetrix Electronics and suitable for TV and monitor power supplies, high-power adapters, and PC power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for TEA1612T/N1,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions, automotive processors, and high-performance analog/power ICs.

The TEA1612T/N1,518 belongs to NXP's GreenChip™ resonant controller family, engineered specifically for high-efficiency, low-standby-power offline SMPS targeting consumer electronics and computing power applications.

FAQ

What is the recommended external capacitor value for the CF pin on the TEA1612T/N1,518?

The TEA1612T/N1,518 datasheet specifies a typical CF capacitor value of 100 pF to achieve the rated 156–485 kHz bridge frequency range. This value is used with IFS = 0.5 mA ÷ 16 and IRS = 50–200 µA to set minimum and maximum frequencies. Deviations require recalculation of Rf(min) and R∆f resistors per Figure 7. Always place CF close to the IC with short traces to minimize noise coupling.

Does the TEA1612T/N1,518 support direct replacement of the TEA1611T in existing designs?

No, the TEA1612T/N1,518 is not a direct replacement for TEA1611T. While both are ZVS resonant controllers, TEA1612T/N1,518 adds VAUX input, enhanced burst mode with HYST/BURST pins, and improved oscillator accuracy. Pinout differs - TEA1611T has 20 pins in SO20, whereas TEA1612T/N1,518 uses 24-pin SO24. Layout and feedback network changes are required.

How does the TEA1612T/N1,518 implement zero-voltage switching (ZVS) in practice?

The TEA1612T/N1,518 itself does not generate ZVS waveforms but enables ZVS operation by precisely controlling half-bridge timing. Its internal oscillator and divide-by-two logic ensure strict 50 % duty cycle and programmable non-overlap time (0.63 µs typ), allowing external resonant tank components (Lr, Cr) to shape voltage/current waveforms so that MOSFETs switch only when drain-source voltage crosses zero - verified in application circuits like Figure 7.

Can the TEA1612T/N1,518 operate without an external bootstrap diode?

Yes, the TEA1612T/N1,518 integrates a high-voltage bootstrap diode (VF = 1.6 V typ @ 5 mA) between VDD(FLOAT) and SH pins. This eliminates the need for an external diode in standard half-bridge configurations. However, if higher current capability or lower VF is required, an external Schottky diode may be added in parallel - though not necessary for typical 8N50-class MOSFET gate drive.

What is the function of the PFC pin on the TEA1612T/N1,518 and how is it used in system design?

The PFC pin on TEA1612T/N1,518 is an open-drain output that signals downstream PFC controllers to disable during burst mode, overtemperature, OCP timeout, or shutdown. It pulls low under those conditions, allowing system-level power optimization. In design, connect PFC to the enable/disable input of a dedicated PFC IC (e.g., UCC28070) via pull-up resistor to reduce total system standby consumption.