NXP Semiconductors TEA1999DB1546

Overview

TEA1999DB1546 from NXP Semiconductors is a GreenChip synchronous rectifier (SR) controller IC for flyback SMPS secondary-side operation, featuring adaptive gate drive, drain-source differential sensing, and self-supply capability for low-voltage (<4.7 V) and high-side rectification applications. It drives external SR MOSFETs with 0.70 A source / 0.50 A sink gate drive strength and operates across 0–26 V output voltage range.

For engineers reviewing the TEA1999DB1546 datasheet, TEA1999DB1546 pinout, TEA1999DB1546 application, or TEA1999DB1546 equivalent, key selection considerations include its TSOP6 (SOT457) package, 1.4 μs minimum active time, −25 mV regulation threshold, UVLO with active gate pull-down, and compatibility with both standard and logic-level SR MOSFETs in USB BC/QuickCharge designs.

Technical Context

The TEA1999DB1546 implements a drain-source differential sensing architecture to control external SR MOSFETs in flyback converters, using the DRAIN and SOURCE pins to detect conduction onset and regulate gate drive to maintain a precise −25 mV (typ) V_DS during regulation. Its adaptive gate driver dynamically adjusts output to sustain optimal MOSFET on-resistance across load conditions.

Startup is managed via CAP pin charging-either through DRAIN (≤15 mA typical at startup) or XV (up to 125 mA)-with UVLO activation at 3.7 V (typ) and hysteresis of 0.1 V. Overtemperature protection triggers at 165 °C (typ) with 20 °C hysteresis, actively pulling GATE low during fault conditions.

Key Specifications

Pinout & Package

TEA1999DB1546 is housed in a TSOP6 (SOT457) plastic surface-mounted package: 2.7 mm × 3.1 mm footprint, 1.1 mm max height, 0.95 mm pitch, with exposed pad not electrically connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier controller applications.

Compared with NCP4306DR2G, TEA1999DB1546 offers wider output voltage support (0–26 V vs. 5–24 V), self-supply capability, and adaptive regulation-critical for USB PD and low-voltage charging. Versus SiHP20N60E, TEA1999DB1546 provides design flexibility with external MOSFET selection, lower thermal resistance path, and finer control over gate timing.

Availability

TEA1999DB1546 is available at Aetrix Electronics and suitable for USB PD fast charging adapters, low-voltage battery chargers, and high-side rectified flyback power supplies requiring stable component supply, long-term lifecycle assurance, and compliance with energy-efficiency standards.

Supply support for TEA1999DB1546 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The TEA1999DB1546 belongs to NXP's GreenChip family of high-efficiency power conversion ICs, designed specifically to replace secondary-side diodes in flyback topologies with intelligent synchronous rectification-targeting ultra-low standby power and high light-load efficiency in compact AC-DC adapters and chargers.

FAQ

What is the function of the XV pin on the TEA1999DB1546?

The XV pin on the TEA1999DB1546 serves as an external supply input that determines the gate driver output voltage level. When grounded, it regulates the GATE output to ~10 V for driving standard SR MOSFETs; when connected to the converter output, it regulates GATE to match that voltage (minimum 4.7 V), enabling use with logic-level MOSFETs. This dual-mode operation makes TEA1999DB1546 adaptable to diverse flyback designs without changing the IC.

Can TEA1999DB1546 operate in high-side rectification configurations?

Yes, TEA1999DB1546 supports high-side rectification by generating its own supply voltage from the DRAIN pin during MOSFET off-time, eliminating the need for an auxiliary winding. Its drain sense input handles up to +120 V, and the self-supply architecture allows reliable operation even when the output voltage is below 4.7 V-making TEA1999DB1546 suitable for isolated high-side SR implementations in compact flyback designs.

What is the minimum active time (t_act(sr)(min)) of TEA1999DB1546 and why is it important?

The TEA1999DB1546 has a minimum synchronous rectification active time of 1.4 μs (typ). This parameter prevents false turn-off caused by voltage ringing at the DRAIN node during high-dI/dt transitions. By enforcing this minimum on-time, TEA1999DB1546 ensures stable conduction during the true MOSFET current flow period-critical for maintaining efficiency and reliability in high-frequency flyback converters with fast-switching MOSFETs.

How does TEA1999DB1546 achieve low no-load power consumption?

TEA1999DB1546 achieves <250 μA typical no-load supply current through integrated power-save mode, which reduces internal bias currents when the DRAIN pin voltage falls below 5.5 V. Combined with UVLO hysteresis and low-quiescent gate driver circuitry, this enables TEA1999DB1546 to meet stringent energy-efficiency standards like DOE Level VI and EU CoC Tier 2-without requiring additional external circuitry or control signals.

Does TEA1999DB1546 include overtemperature protection?

Yes, TEA1999DB1546 incorporates overtemperature protection (OTP) that activates at 165 °C (typ) junction temperature. When triggered, the OTP circuit actively pulls the GATE pin low to disable the SR MOSFET, preventing thermal runaway. Operation resumes automatically once the junction cools to 145 °C (20 °C hysteresis). This protection is implemented directly in the gate driver stage and responds to excessive load, short-circuit, or poor thermal design-ensuring robust field reliability of TEA1999DB1546 in enclosed adapter environments.