NXP Semiconductors TEA1999TK/1J

Overview

TEA1999TK/1J from NXP Semiconductors is a GreenChip synchronous rectifier (SR) controller IC for flyback SMPS secondary-side operation, featuring adaptive gate drive, drain-source voltage sensing (−470 mV typical activation), 125 mA CAP pin charge current, and self-supply capability down to 0 V output voltage. It drives external SR MOSFETs in high-efficiency USB BC/QuickCharge adapters and low-voltage battery chargers.

For engineers reviewing the TEA1999TK/1J datasheet, TEA1999TK/1J pinout, TEA1999TK/1J application, or TEA1999TK/1J equivalent, key selection considerations include its HVSON8 package, 8-pin drain/source-sense architecture, UVLO with active gate pull-down, blanking-configurable minimum on-time (0.7–1.5 μs), and support for both high-side and low-side rectification without auxiliary winding.

Technical Context

The TEA1999TK/1J implements a dedicated synchronous rectification control loop using differential sensing between DRAIN and SOURCE pins to regulate the SR MOSFET's R_DS(on) conduction via adaptive gate voltage-maintaining −25 mV typical regulation level. Its SOI process enables robust 120 V drain sense tolerance and fast 40 ns activation/deactivation timing.

It integrates dual supply management: CAP pin self-charging from DRAIN (15 mA start-up, 125 mA normal) or XV pin (regulated to ≤10.7 V), enabling operation across 0–26 V output ranges. The ENABLE and BLANKING pins provide CCM control and frequency-optimized blanking (0.7 μs at 300 kHz or 1.5 μs at 150 kHz).

Key Specifications

Pinout & Package

HVSON8 package (SOT782-1): plastic thermal-enhanced very thin small outline, 3 mm × 3 mm × 0.85 mm body, no leads, 8 terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier controller applications.

Compared with NCP4306DR2G, TEA1999TK/1J offers wider output voltage support (0–26 V) and true self-supply; versus SiHP20N60E, it provides full flexibility in SR MOSFET selection and optimized gate drive tuning for efficiency-critical designs.

Availability

TEA1999TK/1J is available at Aetrix Electronics and suitable for USB BC/QuickCharge adapters, low-voltage battery chargers, and high-side flyback power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for TEA1999TK/1J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The TEA1999TK/1J belongs to NXP's GreenChip family of high-efficiency power conversion ICs, designed specifically to replace lossy diode rectifiers in flyback topologies and achieve >94% efficiency across universal AC input and wide output voltage ranges.

FAQ

What is the function of the BLANKING pin on the TEA1999TK/1J?

The BLANKING pin on the TEA1999TK/1J configures the minimum synchronous rectification active time: grounding it sets 0.7 μs for high-frequency operation up to 300 kHz, while connecting it to CAP selects 1.5 μs for ≤150 kHz. This prevents false turn-off caused by switching node ringing and ensures reliable MOSFET conduction timing in noisy flyback environments. The TEA1999TK/1J uses this setting to adapt its control loop to the specific converter's operating frequency.

Can the TEA1999TK/1J operate without an auxiliary winding?

Yes, the TEA1999TK/1J can operate without an auxiliary winding. It achieves self-supply by charging the CAP pin capacitor directly from the DRAIN pin during positive voltage phases-even at 0 V output voltage-and supports high-side rectification by deriving gate drive referenced to SOURCE rather than GND. This eliminates dependency on auxiliary windings in battery charging and low-voltage adapter applications. The TEA1999TK/1J leverages its SOI process and internal regulator to sustain operation across the full 0–26 V output range.

What is the maximum drain sense voltage supported by the TEA1999TK/1J?

The TEA1999TK/1J supports a maximum drain sense voltage of +120 V on the DRAIN pin, with a minimum of −0.8 V, per IEC 60134 limiting values. This rating enables robust operation in universal-input (90–264 VAC) flyback converters where reflected primary-side transients appear on the secondary winding. The TEA1999TK/1J maintains accurate sensing and fast turn-off response even under these high-voltage, high-dv/dt conditions.

How does the TEA1999TK/1J regulate the SR MOSFET's conduction?

The TEA1999TK/1J regulates conduction by continuously sensing the voltage difference between DRAIN and SOURCE pins and adjusting the GATE output to maintain −25 mV (typical) regulation level during the on-state. When V_DS exceeds this threshold, it increases gate voltage; when below, it decreases it-dynamically optimizing R_DS(on) across load and temperature. The TEA1999TK/1J implements this closed-loop control without external compensation components.

Does the TEA1999TK/1J support both high-side and low-side SR MOSFET configurations?

Yes, the TEA1999TK/1J supports both high-side and low-side synchronous rectifier configurations. In high-side mode, it derives supply from the DRAIN pin and references all sensing to SOURCE-not GND-enabling direct gate drive without floating supplies or level shifters. In low-side mode, it operates conventionally with GND-referenced SOURCE. The TEA1999TK/1J's architecture and pinout are explicitly designed for seamless transition between both topologies.