NXP Semiconductors TFF11096HN/N1,111

Overview

TFF11096HN/N1,111 from NXP Semiconductors is a Ku-band frequency generator IC designed as a low-phase-noise local oscillator (LO) for VSAT upconverters and transceivers. It delivers RF output from 9.53 GHz to 9.72 GHz, supports reference inputs from 37 MHz to 608 MHz, uses programmable divider settings (16–256), achieves −97 dBc/Hz synthesizer phase noise at 100 kHz offset (IESS-308 compliant), and operates from a 3.3 V supply drawing 100–130 mA.

For engineers reviewing the TFF11096HN/N1,111 datasheet, TFF11096HN/N1,111 pinout, TFF11096HN/N1,111 application, or TFF11096HN/N1,111 equivalent, this device requires attention to VCO tuning voltage range (0.1–0.9 × VREGVCO), differential reference input handling, loop filter topology selection (Type 2 or Type 3), and strict adherence to divider setting stability during operation.

Technical Context

The TFF11096HN/N1,111 integrates a third- or fourth-order PLL with a voltage-controlled oscillator (VCO), a fully differential reference input stage (IN(REF)_P/N), and dual 50 Ω differential RF output buffers (BUF1_P/N, BUF2_P/N). Its PLL architecture relies on an internal bandgap-regulated VREGVCO (2.7 V typical) to bias the VCO tuning path and stabilize loop filter performance.

Divider control is implemented via three logic-configurable pins (NSL0–NSL2), supporting discrete division ratios of 16, 32, 64, 128, or 256 - with all settings required to be fixed at power-up. Lock detection is provided by LCKDET (2.5 V CMOS output), driven by a window detector monitoring VTUNE against 7% and 93% of VREGVCO with 0.1 V hysteresis.

Key Specifications

Pinout & Package

Package: HVQFN24 (SOT616-1), plastic thermal-enhanced very thin quad flat package; 4 mm × 4 mm × 0.85 mm body; 24-terminal no-lead construction with exposed diepad for thermal and ground integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LO generator applications.

Compared with HMC738LP4E and ADF4371, the TFF11096HN/N1,111 offers a purpose-built, drop-in solution for Ku-band VSAT upconverters requiring IESS-308 compliance - trading programmability and bandwidth for guaranteed low-phase-noise performance and simplified analog integration.

Availability

TFF11096HN/N1,111 is available at Aetrix Electronics and suitable for Ku-band satellite communications, VSAT terminal manufacturing, and microwave test instrumentation requiring stable component supply with controlled parametric variation and long-term lifecycle support.

Supply support for TFF11096HN/N1,111 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communication infrastructure markets.

The TFF11096HN/N1,111 belongs to NXP's high-frequency RF synthesis product line, engineered specifically for low-phase-noise local oscillator generation in satellite communication systems operating in the Ku band.

FAQ

What reference input frequency range is supported by the TFF11096HN/N1,111?

The TFF11096HN/N1,111 accepts differential reference inputs from 37 MHz to 608 MHz, determined by the selected divider value (fo(RF) ÷ divider). For example, with divider = 64 and fo(RF) = 9.6 GHz, the required reference is 150 MHz. The device specifies −10 to 0 dBm input power and requires AC coupling per the datasheet.

Does the TFF11096HN/N1,111 support fractional-N synthesis?

No, the TFF11096HN/N1,111 implements an integer-N PLL only, with five fixed divider values (16, 32, 64, 128, 256) selected via NSL0–NSL2 pins. It does not include a sigma-delta modulator or fractional divider, and its phase noise performance is specified only for integer division modes.

How is the lock detect output (LCKDET) configured and interpreted?

LCKDET (pin 7) outputs 2.5 V CMOS HIGH when the PLL is locked and 0 V when out of lock. Internally, it compares VTUNE against 7% and 93% of VREGVCO (2.7 V) with 0.1 V hysteresis. A 100 kΩ pull-down resistor connects it to GND1(REF), so external pull-ups are unnecessary unless driving long traces.

Can both RF output buffers (BUF1 and BUF2) be used simultaneously in the TFF11096HN/N1,111?

Yes, the TFF11096HN/N1,111 provides two independent differential RF output pairs (BUF1_P/N and BUF2_P/N), each capable of delivering −3 dBm ±2 dB. When using both, terminate unused differential ports with 50 Ω to maintain impedance integrity and minimize crosstalk, as specified in Figure 7 of the datasheet.

What thermal considerations apply to the TFF11096HN/N1,111 in continuous operation?

The TFF11096HN/N1,111 has a junction-to-solder-point thermal resistance (Rth(j-sp)) of 25 K/W. With 130 mA max supply current at 3.6 V, power dissipation reaches ~470 mW. To maintain Tj ≤ 125 °C at +85 °C ambient, the PCB must provide adequate copper area under the exposed diepad and ensure low-thermal-resistance mounting to heatsink or chassis ground.