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Texas Instruments THS4211DRBT

Part No.:
THS4211DRBT
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
8-VDFN Exposed Pad
Datasheet:
AetrixTHS4211DRBT.pdf
Description:
IC VOLTAGE FEEDBACK 1 CIRC 8SON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,460

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Product details

Overview

THS4211DRBT from Texas Instruments is a unity-gain stable, voltage-feedback operational amplifier optimized for high-linearity signal conditioning in wideband analog systems. It delivers 970 V/µs slew rate, 1 GHz small-signal bandwidth (±5 V), –90 dBc THD at 30 MHz, 130-MHz 0.1-dB flat bandwidth (G = 2), and ±4.0 V output swing into 499 Ω - enabling precision ADC driving and video signal buffering.

For engineers reviewing the THS4211DRBT datasheet, THS4211DRBT pinout, THS4211DRBT application, or THS4211DRBT equivalent, key selection criteria include harmonic distortion performance at 30–70 MHz, thermal management of its QFN-8 PowerPAD™ package, DC accuracy under ±5 V or single 5 V supply, and compatibility with high-speed active filter topologies requiring >100 MHz closed-loop stability.

Technical Context

The THS4211DRBT employs a voltage-feedback architecture with internal compensation for unity-gain stability across ±2.5 V to ±7.5 V dual supplies or 5 V to 15 V single supply. Its high slew rate and low input voltage noise (7 nV/√Hz) support fast transient fidelity without peaking or ringing in gain-of-2 configurations.

Designed for demanding AC-coupled signal paths, it maintains <0.007% differential gain and <0.003° differential phase in NTSC/PAL video applications, while its 4 MΩ input resistance and 0.3 pF common-mode input capacitance minimize loading on preceding stages in high-frequency buffer or preamplifier roles.

Key Specifications

ParameterValue and Actual Design Meaning
Small-signal bandwidth1 GHz at G = 1, ±5 V - enables direct RF sampling front-end amplification up to UHF band
Slew rate970 V/µs at G = 1 - supports clean 2-V step response in ≤22 ns (0.1%) for high-resolution digitization
THD @ 30 MHz–90 dBc (RL = 499 Ω) - preserves SNR integrity in 12+ bit ADC preamp chains
0.1-dB flat bandwidth130 MHz at G = 2 - ensures amplitude consistency across HD video baseband (0–75 MHz)
Output drive±4.0 V into 499 Ω, 170 mA sink/source - drives 150 Ω video loads or parallel ADC inputs without external buffers
Input voltage noise7 nV/√Hz at 1 MHz - limits added noise floor in low-level sensor signal amplification
Supply range±2.5 V to ±7.5 V dual or 5 V to 15 V single - interoperable with FPGA I/O banks and mixed-signal SoCs

Pinout & Package

THS4211DRBT uses an 8-pin QFN package with exposed thermal pad (PowerPAD™), requiring solder connection to PCB ground plane for thermal compliance and optimal 125°C junction temperature operation.

Pin/TerminalCircuit RoleDesign Meaning
1 NCNo-connect terminalInternally unconnected; must remain floating or grounded per layout guidelines
2 IN−Inverting inputDifferential input node; matched trace routing critical for >100 MHz CMRR preservation
3 IN+Non-inverting inputHigh-impedance input (4 MΩ); decoupling required within 2 mm of pin for RF stability
4 VS−Negative supply railReturn path for bias current; requires local 0.1 µF + 10 µF decoupling adjacent to pin
5 NCNo-connect terminalInternally unconnected; no PCB trace or via permitted
6 VS+Positive supply railPrimary power entry; low-ESR ceramic capacitor mandatory within 1 mm
7 VOUTAmplified outputCapable of sourcing/sinking 170 mA; output impedance <0.3 Ω at 1 MHz enables direct 75 Ω line driving
8 NCNo-connect terminalThermal pad contact point - must be soldered to ≥4 cm² copper pour for θJA = 45.8°C/W

Key Features

FeatureDesign Value
Unity-gain stabilityGuaranteed stable at G = 1 without external compensation, eliminating risk of oscillation in gain-setting resistor networks
Low distortion at high frequency–100 dBc 3rd-harmonic at 30 MHz (G = 2, RL = 499 Ω) enables clean IF signal chain amplification in SDR receivers
Video-optimized linearity0.007% differential gain / 0.003° differential phase meets SMPTE 253M broadcast standards for composite video distribution
PowerPAD™ thermal interfaceθJC = 5°C/W enables 2.18 W power dissipation at TA ≤ +25°C when thermal pad is properly soldered to PCB ground plane
Wide supply flexibilityOperates from ±2.5 V to ±7.5 V dual or 5 V to 15 V single supply - simplifies integration with legacy 5 V logic and modern low-voltage FPGAs

Applications

High-Linearity ADC PreamplifierDifferential-to-Single-Ended Conversion

Use Scenario: Driving the input of a 14-bit, 105 MSPS pipeline ADC in a medical ultrasound receive channel.

IC Role / Device Role / Timing Role: Single-ended voltage buffer with gain-of-2 configuration, providing 2× signal scaling while maintaining <–90 dBc THD up to 40 MHz.

Use Value: Preserves effective number of bits (ENOB) by limiting added distortion to <0.05 LSB at full-scale 2 VPP input.

Use Scenario: Converting LVDS clock or data signals from an FPGA to single-ended 3.3 V CMOS levels for high-speed ADC control interface.

IC Role / Device Role / Timing Role: High-speed differential receiver with 130 MHz 0.1-dB bandwidth, rejecting common-mode noise on backplane traces.

Use Value: Achieves <1 ps jitter addition at 100 MHz due to low input capacitance (0.2 pF diff) and fast settling (22 ns to 0.1%).

DAC Output BufferActive Filtering

Use Scenario: Buffering the current-output of a high-speed DAC (e.g., DAC3482) into a 50 Ω transmission line for arbitrary waveform generation.

IC Role / Device Role / Timing Role: Unity-gain voltage follower with 1 GHz bandwidth, delivering 2 VPP into 50 Ω with <–70 dBc IMD3 at 70 MHz.

Use Value: Enables clean spectral purity in RF stimulus applications without post-DAC passive filtering loss.

Use Scenario: Implementing a 5th-order Chebyshev low-pass filter at 75 MHz cutoff for anti-aliasing before digitization in radar pulse processing.

IC Role / Device Role / Timing Role: Active filter stage using multiple THS4211DRBT units in cascade, each configured as gain-of-1 integrator or differentiator.

Use Value: Maintains group delay flatness <±0.5 ns across passband due to minimal phase nonlinearity up to 100 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed op-amp applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
THS4215DRBTIdentical AC/DC specs plus integrated power-down pin (PD); quiescent current drops to ≤900 µA in shutdownRequired where dynamic power gating is needed (e.g., battery-powered portable test equipment)Select THS4215DRBT only if PD functionality is actively used; otherwise THS4211DRBT offers identical performance at lower cost
LMH6629MA/NOPBLower 550 MHz GBW, 400 V/µs slew rate, but superior 3.3 V operation and lower 1.8 mA quiescent currentBetter suited for low-power, single-supply 3.3 V systems where 1 GHz bandwidth is not requiredChoose LMH6629MA/NOPB for portable instrumentation with tight power budgets; THS4211DRBT remains preferred for >500 MHz signal fidelity

Compared with THS4215DRBT, THS4211DRBT eliminates unused power-down circuitry for higher reliability in always-on systems; versus LMH6629MA/NOPB, it provides 2.2× higher bandwidth and 2.4× faster slew rate at the cost of +17 mA higher quiescent current - making it optimal for fixed-power, ultra-wideband applications.

Availability

THS4211DRBT is available at Aetrix Electronics and suitable for high-speed data acquisition, video signal distribution, and RF test equipment requiring stable component supply with guaranteed long-term manufacturability and TI's 10-year product longevity commitment.

Supply support for THS4211DRBT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with over 50 years of innovation in high-performance amplifiers and data converters.

The THS4211 product line targets wideband signal conditioning in communications infrastructure, medical imaging, and automated test equipment - emphasizing distortion-free amplification from DC to 1 GHz with robust thermal design.

FAQ

What is the maximum recommended junction temperature for continuous operation of the THS4211DRBT?

The THS4211DRBT has a maximum junction temperature of +125°C for continuous operation to ensure long-term reliability and stable distortion performance. Exceeding this limit increases harmonic distortion and risks accelerated parametric drift. Thermal design must maintain TJ ≤ +125°C using the PowerPAD™ soldered to a ≥4 cm² PCB ground plane, especially at full 2.18 W dissipation.

Can the THS4211DRBT operate from a single 5 V supply, and what are the resulting performance trade-offs?

Yes, THS4211DRBT operates from a single 5 V supply with validated performance: 980 MHz small-signal bandwidth, 800 V/µs slew rate, and –60 dBc THD at 30 MHz (G = 1). Trade-offs include reduced output swing (1.2 V to 3.8 V), lower full-power bandwidth (64 MHz), and increased quiescent current variation across temperature versus ±5 V operation.

How does the THS4211DRBT's 0.1-dB flat bandwidth of 130 MHz at G = 2 benefit video signal applications?

The 130 MHz 0.1-dB flat bandwidth at G = 2 ensures amplitude deviation <±0.1 dB across the entire NTSC/PAL baseband (0–75 MHz) and HDTV pixel clock harmonics. This preserves luminance/chrominance signal integrity, enabling <0.007% differential gain error in broadcast-grade video distribution amplifiers without post-compensation equalization.

Is the THS4211DRBT pin-compatible with other members of the THS42xx family, such as the THS4215DRBT?

Yes, THS4211DRBT and THS4215DRBT share identical pinout, package (QFN-8 PowerPAD™), and electrical characteristics except for the THS4215DRBT's dedicated PD pin (pin 1 on SOIC/DGN variants, not present on DRBT). In the DRBT package, both devices have NC on pins 1, 5, and 8 - confirming mechanical and functional pin compatibility for drop-in replacement where power-down is unused.

What layout practices are essential to preserve the THS4211DRBT's 1 GHz bandwidth and low distortion?

Preserving THS4211DRBT's 1 GHz bandwidth requires: (1) placing 0.1 µF ceramic + 10 µF tantalum decoupling capacitors within 2 mm of VS+ and VS− pins; (2) routing IN+ and IN− traces as matched-length microstrips with controlled 50 Ω impedance; (3) soldering the PowerPAD™ thermal pad to a solid ground plane with ≥6 thermal vias; and (4) keeping feedback resistors (e.g., 392 Ω) surface-mount and adjacent to the amplifier to minimize parasitic inductance.

THS4211DRBT Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
8-VDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Amplifier Type:
Voltage Feedback
Number of Circuits:
1
Output Type:
-
Slew Rate:
970V/µs
Gain Bandwidth Product:
350 MHz
-3db Bandwidth:
325 MHz
Current - Input Bias:
7 µA
Voltage - Input Offset:
3 mV
Current - Supply:
19mA
Current - Output / Channel:
220 mA
Voltage - Supply Span (Min):
5 V
Voltage - Supply Span (Max):
15 V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SON (3x3)

THS4211DRBT FAQ

1.How can I place an order for THS4211DRBT through Aetrix?

Please submit a Request for Quotation (RFQ) for THS4211DRBT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for THS4211DRBT reliable?

The price and inventory of THS4211DRBT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for THS4211DRBT is usually 5 days.

3.What payment methods are accepted for THS4211DRBT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for THS4211DRBT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for THS4211DRBT?

THS4211DRBT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your THS4211DRBT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for THS4211DRBT?

For technical support, including THS4211DRBT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your THS4211DRBT requirements.

6.How does Aetrix verify that THS4211DRBT is sourced from the original manufacturer or authorized distributors?

All THS4211DRBT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that THS4211DRBT meets industry standards.

7.What is the process for return or replacement of THS4211DRBT?

All THS4211DRBT units undergo pre-shipment inspection (PSI). If there is an issue with THS4211DRBT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The THS4211DRBT part is unused and in its original packaging.

Return procedure for THS4211DRBT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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