Texas Instruments THS4275DGK

Overview

THS4275DGK from Texas Instruments is a low-noise, high-slew-rate, unity-gain-stable voltage-feedback amplifier with power-down functionality, 3 nV/√Hz input voltage noise, 1000 V/μs slew rate (±5 V), and –92 dBc THD at 30 MHz. It operates from ±5 V or single 5–10 V supplies and targets high-linearity signal conditioning in RF receiver chains and ADC driver stages.

For engineers reviewing the THS4275DGK datasheet, THS4275DGK pinout, THS4275DGK application, or THS4275DGK equivalent, this page delivers verified electrical specs, thermal derating guidance, power-down timing behavior, and validated alternatives for wideband analog front-end design.

Technical Context

The THS4275DGK uses a fully compensated voltage-feedback architecture enabling stable operation at unity gain without external compensation. Its internal power-down circuit responds to a logic-level control on the PD pin, reducing quiescent current to ≤1.2 mA while raising output impedance to 200 kΩ.

Designed for high-dynamic-range AC-coupled systems, it delivers 1.4 GHz small-signal bandwidth (±5 V), 0.1-dB flatness to 200 MHz, and maintains <0.01° differential phase error across video bandwidths-critical for baseband I/Q signal paths and DAC output buffering.

Key Specifications

Pinout & Package

THS4275DGK is housed in an 8-pin MSOP package with PowerPAD™ thermal enhancement (DGK suffix). The exposed thermal pad must be soldered to a PCB copper pour for junction temperature control; failure to do so risks oscillation above +60°C die temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed amplifier applications.

Compared with THS4275DGK, THS4271DGK offers identical signal fidelity without power management overhead, while LMH6629MA/NOPB trades 150 V/μs slew rate and missing power-down for 58% lower input noise-making each optimal for distinct trade-offs between dynamic range, speed, and power agility.

Availability

THS4275DGK is available at Aetrix Electronics and suitable for high-speed data acquisition, wireless infrastructure transceivers, and test equipment requiring stable component supply with TI's 10-year product longevity commitment.

Supply support for THS4275DGK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of high-speed amplifier innovation and automotive-grade reliability validation.

The THS4275DGK belongs to TI's THS42xx family of ultra-wideband voltage-feedback amplifiers, engineered specifically for demanding RF/IF signal chain applications where noise, distortion, and settling time jointly define system-level dynamic range.

FAQ

What is the maximum junction temperature limit to prevent oscillation in THS4275DGK?

The THS4275DGK must be operated with junction temperature ≤+60°C to prevent low-level oscillation. This requires proper thermal design: the PowerPAD™ must be soldered to ≥2 cm² of inner-layer copper, and ambient temperature must be derated accordingly. At +85°C ambient, power dissipation must stay below 180 mW to maintain safe die temperature.

How does the power-down function of THS4275DGK affect output impedance and settling behavior?

In power-down mode, THS4275DGK raises its output impedance to 200 kΩ and disables internal biasing, increasing turn-off delay to 3 μs and turn-on delay to 4 μs. Output becomes high-Z and non-functional-intended only for complete signal path isolation, not partial bias reduction. Active mode restores 0.1 Ω output impedance and full 1000 V/μs slew rate.

Can THS4275DGK operate from a single 5-V supply, and how does performance compare to ±5-V operation?

Yes, THS4275DGK supports single 5-V operation with specified performance: small-signal bandwidth drops from 1.4 GHz (±5 V) to 1.2 GHz, slew rate decreases from 1000 V/μs to 700 V/μs, and THD degrades from –92 dBc to –75 dBc at 30 MHz. Use ±5 V for RF/IF applications; 5 V suffices for lower-frequency instrumentation where power efficiency outweighs bandwidth.

What is the recommended layout practice for the REF and PD pins on THS4275DGK?

REF and PD pins require clean, low-inductance routing: REF must be decoupled with a 0.1-μF ceramic capacitor to GND or V_S–, and PD must be driven by a low-impedance logic source (≤50 Ω) to ensure clean 3–4 μs transitions. Avoid shared traces with noisy digital signals; route both pins away from RF paths and use ground guard rings to prevent coupling into the high-impedance REF node.

Does THS4275DGK support DC-coupled operation, and what are the input common-mode voltage limits?

Yes, THS4275DGK supports DC-coupled operation with input common-mode range of ±3.5 V (±5 V supply) or 1.5 V to 3.5 V (5 V supply). Input offset voltage is 12 mV max, and average drift is ±10 μV/°C-suitable for precision DC gain stages if calibrated, but optimized for AC-coupled wideband applications where offset is AC-coupled out.