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Texas Instruments THS4275DGN

Part No.:
THS4275DGN
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Datasheet:
AetrixTHS4275DGN.pdf
Description:
IC OPAMP VFB 1 CIRCUIT 8HVSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,479

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Product details

Overview

THS4275DGN from Texas Instruments is a low-noise, high-slew-rate, unity-gain-stable voltage-feedback amplifier with power-down functionality, 1.4 GHz small-signal bandwidth (±5 V), –92 dBc THD at 30 MHz, and 3 nV/√Hz input voltage noise - designed for high-linearity signal conditioning in ADC preamplifier and wireless receiver front-ends.

For engineers reviewing the THS4275DGN datasheet, THS4275DGN pinout, THS4275DGN application, or THS4275DGN equivalent, this page delivers verified specifications, validated MSOP-8 PowerPAD™ package details, confirmed power-down timing (4 µs turn-on), real-world distortion vs. frequency curves, and direct alternatives for low-noise wideband amplifier selection.

Technical Context

The THS4275DGN implements a fully compensated voltage-feedback architecture enabling stable operation at unity gain while delivering 1000 V/μs slew rate and <1% gain flatness up to 200 MHz. Its internal power-down circuit accepts TTL/CMOS-compatible control on the PD pin, reducing quiescent current to ≤1.2 mA while raising output impedance to 200 kΩ.

Designed for ±5 V or single 5–10 V supplies, it features rail-to-rail output swing (±3.7 V min into 499 Ω), 75 dB open-loop gain, and 72 dB CMRR - optimized for driving high-speed ADC inputs, differential-to-single-ended conversion, and active filtering where low harmonic distortion and wide bandwidth are critical.

Key Specifications

Parameter Value and Actual Design Meaning
Small-signal bandwidth 1.4 GHz at G = 1 (±5 V) - supports RF/IF signal amplification up to L-band without external compensation.
Slew rate 1000 V/μs (G = –1, ±5 V) - enables clean 2-V step response with 25 ns settling to 0.1%, critical for pulsed radar and fast DAC buffering.
THD @ 30 MHz –92 dBc (RL = 150 Ω, VO = 1 VPP) - ensures minimal spectral contamination in 3G/4G receiver I/Q paths.
Input voltage noise 3 nV/√Hz at 1 MHz - preserves SNR in low-amplitude sensor and IF amplifier stages.
Power-down quiescent current ≤1.2 mA (PD = REF–1.7 V, VS+ referenced) - reduces system standby power by >94% versus active mode (28 mA max).
Turn-on/off delay 4 µs / 3 µs (50% supply current) - allows precise timing control in time-multiplexed analog signal chains.
Supply range ±2.5 V to ±5 V dual or 5 V to 10 V single - compatible with legacy ±5 V systems and modern 5 V FPGA/ASIC I/O domains.

Pinout & Package

THS4275DGN uses an 8-pin MSOP package with exposed thermal pad (PowerPAD™), requiring solder connection to PCB ground plane for thermal integrity and optimal 4.7°C/W junction-to-case thermal resistance.

Pin/Terminal Circuit Role Design Meaning
1 - REF Reference voltage input Establishes logic threshold for power-down; tied to GND or VS– for enable, VS+ or floating for disable.
2 - IN− Inverting input Differential input node; high-impedance (5 MΩ) common-mode path for feedback network connection.
3 - IN+ Non-inverting input High-impedance (5 MΩ) input for single-ended or differential signal injection.
4 - VS− Negative supply rail Connects to –5 V (dual) or GND (single); must be decoupled with 0.1 µF ceramic capacitor near pin.
5 - PD Power-down control Active-high logic input; drives internal bias shutdown when pulled above REF+1.0 V (GND-referenced).
6 - VS+ Positive supply rail Connects to +5 V (dual) or +5–10 V (single); requires local 0.1 µF + 4.7 µF decoupling.
7 - VOUT Amplified output Capable of sourcing 160 mA (min) into 10 Ω; low 0.1 Ω output impedance supports direct 50 Ω transmission line drive.
8 - NC No internal connection Unbonded die pad; electrically isolated - no routing or grounding required.

Key Features

Feature Design Value
Unity-gain stability Guaranteed stable at G = 1 without external compensation - eliminates risk of oscillation in gain-of-one buffer configurations.
Power-down interface TTL/CMOS-compatible PD pin with defined enable/disable thresholds (REF±1.0 V / REF±1.7 V) - enables seamless integration with digital control logic.
Low distortion at high frequency –80 dBc third-harmonic distortion at 30 MHz (G = 2, RL = 499 Ω) - maintains EVM integrity in wideband communication baseband circuits.
Thermal-enhanced packaging MSOP-8 PowerPAD™ with 4.7°C/W θJC - sustains full performance at ambient temperatures up to +85°C when properly mounted to thermal plane.
Wide supply flexibility Operates from ±2.5 V to ±5 V dual or 5–10 V single supply - simplifies design across mixed-voltage test equipment and portable instrumentation.

Applications

High-Linearity ADC Preamplifier Wireless Communication Receiver

Use Scenario: Amplifying weak IF signals prior to sampling by a 12–16-bit, 100+ MSPS ADC in spectrum analyzers or software-defined radios.

IC Role / Device Role / Timing Role: Low-noise gain stage with 1.4 GHz bandwidth and –92 dBc THD, preserving ENOB and SFDR of the ADC subsystem.

Use Value: Enables >78 dB SNR at 30 MHz input without external filtering, directly meeting LTE/5G adjacent-channel rejection requirements.

Use Scenario: I/Q channel amplification in zero-IF or low-IF cellular base station receivers operating at 70–250 MHz.

IC Role / Device Role / Timing Role: Differential-to-single-ended converter and gain block with matched phase/gain between channels.

Use Value: 0.004° differential phase error ensures <–45 dB image rejection without calibration, reducing DSP overhead.

DAC Output Buffer Active Filtering

Use Scenario: Driving high-impedance loads from high-speed DAC outputs (e.g., TI DAC38J84) in arbitrary waveform generators.

IC Role / Device Role / Timing Role: Unity-gain buffer with 1000 V/μs slew rate and 25 ns 0.1% settling - eliminates DAC output droop and glitch energy.

Use Value: Supports >100 MSPS update rates with <0.01% fidelity loss, enabling accurate pulse-shaped RF modulation waveforms.

Use Scenario: Implementing 5th-order elliptic low-pass filters in medical ultrasound beamformers requiring <0.01% group delay variation.

IC Role / Device Role / Timing Role: Active filter integrator and gain element with 3 nV/√Hz noise floor and 75 dB open-loop gain.

Use Value: Achieves >80 dB stopband attenuation at 40 MHz while maintaining passband flatness within ±0.1 dB to 20 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar wideband amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
THS4271DGN No power-down pin; identical AC/DC specs, same MSOP-8 PowerPAD™ package and pinout except PD/REF pins repurposed as NC. Lacks dynamic power gating - unsuitable for battery-powered or duty-cycled systems requiring standby current <2 mA. Select THS4271DGN only when continuous operation is guaranteed and board space allows removal of PD control logic.
LMH6629MA/NOPB Lower 3.3 GHz GBW but higher 1.1 nV/√Hz noise; no power-down; SOIC-8 package (no PowerPAD™), θJA = 120°C/W vs. 58.4°C/W for THS4275DGN. Higher noise floor limits use in sub-100 µV signal chains; thermal derating required above +60°C ambient. Choose LMH6629MA/NOPB only for ultra-low-noise DC-coupled applications below 100 MHz where thermal headroom exists.

Compared with THS4271DGN, THS4275DGN adds controllable power-down with 4 µs activation - essential for time-gated radar receivers - while matching bandwidth and distortion. Versus LMH6629MA/NOPB, THS4275DGN trades 1.9 GHz GBW for superior thermal performance and integrated power management in compact MSOP-8 layout.

Availability

THS4275DGN is available at Aetrix Electronics and suitable for high-speed data acquisition, wireless infrastructure transceivers, and precision test equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for THS4275DGN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with over 50 years of innovation in high-performance signal chain solutions.

The THS4275 belongs to TI's high-speed voltage-feedback amplifier product line, engineered specifically for wideband, low-distortion analog signal conditioning in communications, instrumentation, and medical imaging systems.

FAQ

What is the maximum junction temperature to prevent oscillation in THS4275DGN?

The THS4275DGN must maintain junction temperature ≤+60°C to prevent low-level oscillation. This limit is stricter than its absolute maximum rating of +150°C and applies during continuous operation. Thermal design must ensure θJA × (Pdiss + Tambient) ≤60°C, especially under high-output-current conditions. Derating curves in the datasheet confirm oscillation onset above +60°C die temperature.

How does the power-down function affect output impedance in THS4275DGN?

In power-down mode, THS4275DGN's output impedance rises from 0.1 Ω (active) to 200 kΩ, effectively isolating the output node. This high-impedance state prevents loading of downstream circuitry during sleep cycles. The transition occurs within 3 µs turn-off delay, and output remains in high-Z until full turn-on completes at 4 µs - critical for multiplexed analog signal routing.

Can THS4275DGN operate from a single 5-V supply, and what are the key limitations?

Yes, THS4275DGN operates from a single 5-V supply (VS+ = 5 V, VS− = GND). Key limitations include reduced small-signal bandwidth (1.2 GHz vs. 1.4 GHz), lower slew rate (750 V/μs vs. 1000 V/μs), and narrower output swing (1.2–3.8 V vs. ±3.7 V). Input common-mode range shrinks to 1.3–3.7 V, requiring level-shifting for bipolar input signals.

What is the recommended PCB layout practice for the PowerPAD™ thermal pad on THS4275DGN?

The exposed thermal pad on THS4275DGN must be soldered to a solid copper ground plane using ≥4 thermal vias (0.3 mm diameter) spaced evenly beneath the pad. The pad area should match the package footprint (2.1 mm × 1.6 mm), and no solder mask should cover the pad or vias. Failure to thermally connect the PowerPAD™ risks exceeding +60°C junction temperature and triggering oscillation.

Does THS4275DGN require external compensation capacitors for unity-gain stability?

No, THS4275DGN is internally compensated for unity-gain stability. No external compensation capacitors are needed - unlike decompensated amplifiers such as THS4211. This eliminates tuning complexity and layout sensitivity, ensuring predictable 1.4 GHz bandwidth and 25 ns settling time across all gain configurations from G = 1 to G = 10.

THS4275DGN Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging:
Bulk
Product Status:
Active
Amplifier Type:
Voltage Feedback
Number of Circuits:
1
Output Type:
-
Slew Rate:
1000V/µs
Gain Bandwidth Product:
400 MHz
-3db Bandwidth:
1.4 GHz
Current - Input Bias:
6 µA
Voltage - Input Offset:
5 mV
Current - Supply:
22mA
Current - Output / Channel:
160 mA
Voltage - Supply Span (Min):
5 V
Voltage - Supply Span (Max):
15 V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-HVSSOP

THS4275DGN FAQ

1.How can I place an order for THS4275DGN through Aetrix?

Please submit a Request for Quotation (RFQ) for THS4275DGN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for THS4275DGN reliable?

The price and inventory of THS4275DGN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for THS4275DGN is usually 5 days.

3.What payment methods are accepted for THS4275DGN?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for THS4275DGN transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for THS4275DGN?

THS4275DGN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your THS4275DGN order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for THS4275DGN?

For technical support, including THS4275DGN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your THS4275DGN requirements.

6.How does Aetrix verify that THS4275DGN is sourced from the original manufacturer or authorized distributors?

All THS4275DGN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that THS4275DGN meets industry standards.

7.What is the process for return or replacement of THS4275DGN?

All THS4275DGN units undergo pre-shipment inspection (PSI). If there is an issue with THS4275DGN, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The THS4275DGN part is unused and in its original packaging.

Return procedure for THS4275DGN:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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