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Texas Instruments THS4275DGNR
- Part No.:
- THS4275DGNR
- Manufacturer:
- Texas Instruments
- Category:
- Instrumentation, Op Amps, Buffer Amps
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
THS4275DGNR.pdf
- Description:
- IC OPAMP VFB 1 CIRCUIT 8HVSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,444
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Product details
Overview
THS4275DGNR from Texas Instruments is a low-noise, high-slew-rate, unity-gain-stable voltage-feedback amplifier with power-down functionality, 3 nV/√Hz input voltage noise, 1000 V/μs slew rate (±5 V), and –92 dBc THD at 30 MHz. It operates from ±5 V or single 5–10 V supplies and targets high-linearity signal conditioning in RF receiver chains and ADC preamplifier stages.
For engineers reviewing the THS4275DGNR datasheet, THS4275DGNR pinout, THS4275DGNR application, or THS4275DGNR equivalent, this page delivers verified electrical specifications, thermal derating constraints (+60°C max die temperature to prevent oscillation), power-down timing (4 μs turn-on), and MSOP-8 PowerPAD™ package implementation guidance for wideband analog front-end designs.
Technical Context
The THS4275DGNR uses a voltage-feedback architecture optimized for unity-gain stability across its 1.4 GHz small-signal bandwidth (±5 V). Its power-down circuit accepts TTL-compatible logic levels referenced to either supply rail or ground, enabling low-quiescent-current standby (≤1.2 mA) without external biasing.
Thermal management is critical: oscillation occurs above +60°C junction temperature, requiring thermal vias and PCB copper pour under the exposed PowerPAD™. Input common-mode range extends to ±3.5 V (±5 V supply), and output swing reaches ±3.7 V into 499 Ω, supporting 16-bit ADC interface requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Small-signal bandwidth | 1.4 GHz at ±5 V - enables direct IF sampling up to UHF bands without gain peaking instability |
| Slew rate | 1000 V/μs at ±5 V - supports full-scale transient response for 10+ bit resolution at >20 MSPS |
| Input voltage noise | 3 nV/√Hz at 1 MHz - preserves SNR in low-amplitude sensor and RF preamp stages |
| THD @ 30 MHz | –92 dBc at 1 VPP, RL = 150 Ω - meets LTE/WiFi adjacent-channel rejection specs |
| Power-down quiescent current | ≤1.2 mA at +85°C - reduces system standby power in battery-operated instrumentation |
| Supply voltage range | ±2.5 V to ±5 V dual or 5–10 V single - compatible with mixed-signal SoC rails and legacy 5 V systems |
| Junction temperature limit | +60°C continuous - mandates thermal design with PowerPAD™ soldered to inner-layer ground plane |
Pinout & Package
THS4275DGNR is housed in an 8-pin MSOP PowerPAD™ (DGN) package with thermally enhanced exposed paddle. The PowerPAD™ must be soldered to a PCB thermal plane for reliable operation below +60°C junction temperature.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (REF) | Reference voltage input | Logic threshold reference for power-down control; tied to GND or VS− for enable, VS+ or floating for disable |
| 2 (IN−) | Inverting input | Differential input node; matched impedance routing required for optimal CMRR and distortion performance |
| 3 (IN+) | Non-inverting input | High-impedance input (5 MΩ); requires guard ring and low-capacitance layout to preserve 0.4 pF common-mode capacitance |
| 4 (VS−) | Negative supply | Must be decoupled with ≤100 nF ceramic capacitor placed within 3 mm of pin; connects to internal bias network |
| 5 (PD) | Power-down control | TTL/CMOS-compatible input; asserts power-down when driven to REF +1.0 V (enable) or REF −1.7 V (disable) |
| 6 (VS+) | Positive supply | Supports ±5 V or single 5–10 V; PSRR ≥70 dB ensures immunity to digital supply noise coupling |
| 7 (VOUT) | Amplified output | Capable of sourcing 110 mA and sinking 50 mA into 10 Ω; 0.1 Ω output impedance enables driving 150 Ω video loads |
| 8 (NC) | No internal connection | Not bonded; must remain unconnected to avoid parasitic coupling or mechanical stress on die attach |
Key Features
| Feature | Design Value |
|---|---|
| Unity-gain stable architecture | Eliminates need for external compensation networks in gain-of-1 configurations, reducing BOM count and layout area |
| Power-down mode with fast switching | 4 μs turn-on / 3 μs turn-off delays enable burst-mode operation in time-interleaved ADC systems |
| Low distortion at high frequency | –80 dBc third-harmonic distortion at 30 MHz ensures clean spectral purity for direct-conversion receivers |
| Thermally enhanced MSOP PowerPAD™ | θJA = 58.4°C/W enables >150 mW dissipation with 2 oz copper and 4 thermal vias-critical for sustained 1000 V/μs operation |
| Wide supply flexibility | Operates from ±2.5 V to ±5 V or 5–10 V single supply-supports both portable and industrial rail architectures |
Applications
| High-Linearity ADC Preamplifier | Wireless Communication Receiver |
|---|---|
Use Scenario: Driving the input of a 14-bit, 100 MSPS pipeline ADC in a software-defined radio front end. IC Role / Device Role / Timing Role: Single-ended-to-differential conversion and gain stage with <1 LSB gain error over temperature. Use Value: 3 nV/√Hz noise and –92 dBc THD at 30 MHz preserve ENOB >12.5 bits across 0–40 MHz IF band. |
Use Scenario: Baseband I/Q channel amplification in a 5G NR FR1 femtocell transceiver. IC Role / Device Role / Timing Role: Low-distortion buffer between mixer output and programmable gain amplifier input. Use Value: 1.4 GHz bandwidth and –60 dBc IMD3 at 70 MHz support 100 MHz channel bandwidth with ACPR compliance. |
| Differential to Single-Ended Conversion | DAC Output Buffer |
Use Scenario: Converting differential LVDS clock signals to single-ended 3.3 V CMOS for FPGA clock distribution. IC Role / Device Role / Timing Role: High-speed comparator-like buffer with sub-25 ns settling to 0.1%. Use Value: 950 V/μs slew rate and 25 ns settling ensure <5 ps jitter contribution to 100 MHz clock edges. |
Use Scenario: Buffering the output of a 16-bit, 50 MSPS current-steering DAC in medical imaging waveform generation. IC Role / Device Role / Timing Role: Wideband output driver maintaining monotonicity and low glitch energy. Use Value: ±3.7 V output swing into 499 Ω and 0.004° differential phase meet DICOM grayscale fidelity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| THS4271DGNR | No power-down pin; identical AC/DC specs and pinout except PD/REF pins repurposed as NC | Used where continuous operation is required and standby current is not constrained | Select THS4271DGNR if power-down functionality is unnecessary and board space allows same footprint |
| LMH6629MA/NOPB | Lower 3.2 GHz GBW but higher 5.5 nV/√Hz noise; no power-down; SOIC-8 package only | Better suited for DC-coupled precision gain blocks than RF/IF signal chains | Choose LMH6629MA/NOPB for ultra-wideband DC applications where thermal derating is less critical |
Compared with THS4271DGNR, THS4275DGNR adds power-down control at identical speed/noise trade-offs, while LMH6629MA/NOPB offers wider bandwidth but sacrifices noise performance and thermal robustness-making THS4275DGNR optimal for thermally constrained, burst-mode wideband systems.
Availability
THS4275DGNR is available at Aetrix Electronics and suitable for high-frequency test equipment, broadband communications infrastructure, and medical ultrasound signal acquisition requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for THS4275DGNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in high-performance amplifier design and manufacturing.
The THS427x family was engineered specifically for wideband, low-distortion signal conditioning in communications and instrumentation-prioritizing unity-gain stability, thermal reliability, and seamless integration with high-resolution data converters.
FAQ
What is the maximum junction temperature for continuous operation of the THS4275DGNR without risk of oscillation?
The THS4275DGNR must be operated with a junction temperature ≤+60°C to prevent low-level oscillation. This requires thermal vias under the PowerPAD™, ≥2 oz copper ground plane, and careful attention to power dissipation. At +85°C ambient with 22 mA quiescent current, thermal design must limit θJA to ≤50°C/W to maintain safe junction temperature.
How does the power-down functionality of the THS4275DGNR differ from standard enable/disable schemes?
The THS4275DGNR uses a dual-reference power-down input: PD pin thresholds shift based on REF pin state (GND, VS−, VS+, or floating). When REF = GND, PD ≥ +1.8 V enables; when REF = VS+, PD ≤ VS+ − 1.7 V disables. This eliminates need for level-shifting logic and supports flexible system-level control architectures.
Can the THS4275DGNR drive a 50 Ω coaxial load directly, and what are the implications for output swing?
Yes-the THS4275DGNR can drive 50 Ω loads, but output swing is reduced to ±2.2 V (typical) due to internal 0.1 Ω output impedance and voltage drop across the load. For full ±3.7 V swing, use 150 Ω or higher loads; for 50 Ω, add a series 100 Ω resistor to match and preserve stability, accepting ~3 dB gain loss.
What layout practices are mandatory to achieve specified 1.4 GHz bandwidth and –92 dBc THD with the THS4275DGNR?
Required practices include: (1) short, symmetric, 50 Ω-controlled IN+/IN− traces with ground guard; (2) PowerPAD™ soldered to solid inner-layer ground with ≥4 thermal vias; (3) local 100 nF X7R ceramic decoupling ≤3 mm from VS+/VS− pins; (4) VOUT routed away from sensitive inputs to avoid feedthrough; and (5) no stubs or discontinuities on any signal path.
Is the THS4275DGNR pin-compatible with the THS4271DGNR, and what modifications are needed for substitution?
Yes-THS4275DGNR and THS4271DGNR share identical pinout and footprint. Substitution requires only firmware-level reconfiguration: THS4271DGNR lacks PD/REF pins (pins 1 and 5 are NC), so those nets must be left unconnected. All other connections, decoupling, and thermal design remain unchanged.
THS4275DGNR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Amplifier Type:
- Voltage Feedback
- Number of Circuits:
- 1
- Output Type:
- -
- Slew Rate:
- 1000V/µs
- Gain Bandwidth Product:
- 400 MHz
- -3db Bandwidth:
- 1.4 GHz
- Current - Input Bias:
- 6 µA
- Voltage - Input Offset:
- 5 mV
- Current - Supply:
- 22mA
- Current - Output / Channel:
- -
- Voltage - Supply Span (Min):
- 5 V
- Voltage - Supply Span (Max):
- 15 V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-HVSSOP
THS4275DGNR FAQ
1.How can I place an order for THS4275DGNR through Aetrix?
Please submit a Request for Quotation (RFQ) for THS4275DGNR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for THS4275DGNR reliable?
The price and inventory of THS4275DGNR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for THS4275DGNR is usually 5 days.
3.What payment methods are accepted for THS4275DGNR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for THS4275DGNR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for THS4275DGNR?
THS4275DGNR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your THS4275DGNR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for THS4275DGNR?
For technical support, including THS4275DGNR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your THS4275DGNR requirements.
6.How does Aetrix verify that THS4275DGNR is sourced from the original manufacturer or authorized distributors?
All THS4275DGNR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that THS4275DGNR meets industry standards.
7.What is the process for return or replacement of THS4275DGNR?
All THS4275DGNR units undergo pre-shipment inspection (PSI). If there is an issue with THS4275DGNR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The THS4275DGNR part is unused and in its original packaging.
Return procedure for THS4275DGNR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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