Texas Instruments THS4275DRBR

Overview

THS4275DRBR from Texas Instruments is a low-noise, high-slew-rate, unity-gain-stable voltage-feedback amplifier with power-down functionality, 3 nV/√Hz input voltage noise, 1000 V/μs slew rate (±5 V), and –92 dBc THD at 30 MHz. It operates from ±5 V or single 5–10 V supplies and targets high-linearity signal conditioning in RF receiver chains and ADC driver stages.

For engineers reviewing the THS4275DRBR datasheet, THS4275DRBR pinout, THS4275DRBR application, or THS4275DRBR equivalent, this page delivers verified specifications, validated pin functions, real-world use cases in high-speed analog front-ends, and confirmed alternative options for power-sensitive wideband amplification designs.

Technical Context

The THS4275DRBR uses a voltage-feedback architecture optimized for unity-gain stability without external compensation. Its internal power-down circuit responds to a logic-level control on the PD pin, reducing quiescent current to ≤1.2 mA while raising output impedance to 200 kΩ in shutdown mode.

It achieves 1.4 GHz small-signal bandwidth (±5 V) and maintains <0.1-dB gain flatness up to 200 MHz into 150 Ω. Harmonic distortion is suppressed via matched internal transistor pairs and low-impedance output stage design, enabling clean signal amplification through 70 MHz third-order intermodulation test conditions.

Key Specifications

Pinout & Package

THS4275DRBR is housed in an 8-pin leadless MSOP PowerPAD™ package (DRB), thermally enhanced with an exposed die paddle requiring PCB thermal pad connection for junction temperature control. Maximum continuous junction temperature is +125°C; oscillation risk begins above +60°C die temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar wideband voltage-feedback amplifier applications.

Compared with THS4275DRBR, THS4271DRBR eliminates power management overhead but increases static power by >25 mA, while LMH6629MA/NOPB trades off gain versatility and shutdown capability for 58% lower input noise-making it preferable only in fixed-gain, noise-limited, always-on systems.

Availability

THS4275DRBR is available at Aetrix Electronics and suitable for high-speed data acquisition, wireless infrastructure transceivers, and professional audio equipment requiring stable component supply, guaranteed long-term sourcing, and TI-authorized traceability.

Supply support for THS4275DRBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in high-performance amplifier design and manufacturing.

The THS427x family was engineered for wideband, low-distortion signal conditioning in communications and instrumentation-prioritizing unity-gain stability, sub-4 nV/√Hz noise, and robust thermal behavior in compact packages.

FAQ

What is the maximum junction temperature limit to prevent oscillation in the THS4275DRBR?

The THS4275DRBR must not exceed +60°C die temperature during continuous operation to avoid low-level oscillation. This is a hard thermal limit-not a reliability guideline-and requires thermal design that maintains TJ ≤ +60°C under worst-case power dissipation, especially in power-down transition states. The DRB package's θJC = 5°C/W demands direct thermal pad connection to a copper plane.

How does the power-down function of the THS4275DRBR affect output impedance and settling behavior?

In power-down mode, the THS4275DRBR raises its output impedance to 200 kΩ and disables the output stage, eliminating sourcing/sinking capability. Settling time becomes undefined as the amplifier ceases closed-loop operation. Recovery to full performance requires ≤4 μs turn-on delay after PD pin activation, verified under 50% quiescent current threshold conditions per datasheet Figure 38.

Can the THS4275DRBR operate from a single 5-V supply, and what are the resulting performance trade-offs?

Yes, the THS4275DRBR supports single 5-V operation with specified performance: small-signal bandwidth drops to 1.2 GHz, slew rate reduces to 750 V/μs, and THD degrades to –75 dBc at 30 MHz. Input common-mode range narrows to 1.3–3.7 V, and output swing becomes asymmetric (1.2–3.8 V). These shifts are documented in Section "ELECTRICAL CHARACTERISTICS: VS = 5 V" of the SLOS397F datasheet.

What is the recommended layout practice for the REF and PD pins on the THS4275DRBR to avoid false power-down triggering?

REF and PD pins must be driven with low-impedance sources (<1 kΩ) and shielded from noisy supply or digital traces. Floating REF or PD pins cause undefined behavior; TI recommends tying REF directly to VS− (for active-high enable) or VS+ (for active-low enable) via a solid 0-Ω connection if unused. Decoupling capacitors near VS+ and VS− reduce supply-induced threshold shifts that could trigger unintended shutdown.

Does the THS4275DRBR require external compensation for unity-gain stability, and how is this verified in the datasheet?

No, the THS4275DRBR is internally compensated for unconditional unity-gain stability. This is verified by Figure 1 ("Small-signal unity gain frequency response") showing flat gain response to 1.4 GHz with no peaking or ringing, and by the "FEATURES" section explicitly stating "Unity Gain Stability". No external components are needed for G = 1 configurations, unlike decompensated amplifiers such as THS3202.