Texas Instruments THS4304DGKR

Overview

THS4304DGKR from Texas Instruments is a wideband voltage-feedback operational amplifier optimized for high-speed ADC driving, active filtering, and RF/telecom signal conditioning on single 5-V or 3-V supplies. It delivers 3 GHz small-signal bandwidth at G = +1, 830 V/µs slew rate, 2.4 nV/√Hz input voltage noise, 18 mA quiescent current, and –84 dBc second-harmonic distortion at 10 MHz - enabling high-fidelity analog front-ends in ultrasound and gamma camera systems.

For engineers reviewing the THS4304DGKR datasheet, THS4304DGKR pinout, THS4304DGKR application, or THS4304DGKR equivalent, key selection criteria include its MSOP-8 package thermal performance (θJA = 180.8°C/W), differential ADC drive capability with <4.5 ns settling to 1%, low 50-mVpp output noise floor, and compatibility with 100-Ω loads while maintaining >240 MHz large-signal bandwidth.

Technical Context

The THS4304DGKR implements a traditional voltage-feedback topology with balanced inputs, low offset voltage (≤5 mV), and high common-mode rejection (>73 dB), enabling precision gain staging without DC error accumulation. Its BiCom3 SiGe process supports full dynamic range operation on single 5-V supply - eliminating need for ±5-V rails while sustaining 2-Vpp output swing into 100 Ω.

Designed for minimal layout sensitivity, it requires careful control of parasitic capacitance at the inverting input and output; recommended feedback resistor is 249 Ω for G = +2 to limit peaking to ~2 dB. Power supply rejection exceeds 80 dB (+PSRR) at DC, supporting mixed-signal environments where digital noise couples onto analog rails.

Key Specifications

Pinout & Package

THS4304DGKR is housed in an 8-pin MSOP (DGK) package with exposed thermal pad, offering improved thermal resistance (θJA = 180.8°C/W) over SOIC-8 and compact footprint versus SOT-23-5. Pin 1 is marked with dot; pins 3 and 6 are NC (no internal connection).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar wideband op-amp applications.

Compared with LMH6702MF/NOPB and ADA4817-1ARMZ, THS4304DGKR uniquely balances 3-GHz bandwidth, 2.4-nV/√Hz noise, and MSOP-8 thermal robustness - making it the preferred choice for space-constrained, high-SFDR ADC driver designs operating at 5 V.

Availability

THS4304DGKR is available at Aetrix Electronics and suitable for ultrasound imaging front-ends, RF/telecom signal conditioning, gamma camera pulse processing, and high-speed data acquisition systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for THS4304DGKR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog and embedded processing solutions for industrial, automotive, and communications markets.

The THS4304DGKR belongs to TI's high-speed operational amplifier product line, engineered specifically for single-supply, wideband signal conditioning in medical imaging, test equipment, and wireless infrastructure applications.

FAQ

What is the maximum operating frequency of the THS4304DGKR when configured for G = +2?

The THS4304DGKR achieves 240 MHz large-signal bandwidth (2-VPP output) and 300 MHz 0.1-dB flat bandwidth at G = +2 with RF = 249 Ω and RL = 100 Ω. This makes THS4304DGKR suitable for driving high-speed ADCs such as the ADS5500 while preserving signal fidelity up to 150 MHz baseband.

Does the THS4304DGKR support single-supply operation below 5 V?

Yes, the THS4304DGKR operates from 2.7 V to 5.5 V single supply. At 3 V, it maintains 900 MHz small-signal bandwidth and 750 V/µs slew rate, though output swing reduces to 1.7 VPP into 100 Ω at 85°C. THS4304DGKR is fully specified across this range, enabling low-power portable instrumentation designs.

How does the THS4304DGKR's MSOP-8 package compare thermally to SOIC-8 and SOT-23 variants?

The THS4304DGKR's MSOP-8 package has θJA = 180.8°C/W, intermediate between SOIC-8 (97.5°C/W) and SOT-23-5 (255.4°C/W). While SOIC offers better thermal performance, MSOP provides 30% smaller footprint than SOIC and superior heat dissipation versus SOT-23 - making THS4304DGKR ideal for compact, thermally demanding layouts.

Can the THS4304DGKR drive a 50-Ω load directly?

The THS4304DGKR is characterized into 100 Ω and 1 kΩ loads, not 50 Ω. Driving 50 Ω risks exceeding safe operating area due to increased current demand and reduced output swing. For 50-Ω systems, use THS4304DGKR with series termination or buffer stage - confirmed in TI's EVM schematics for THS4304DGKR evaluation.

What layout practices are critical for achieving specified THS4304DGKR performance?

TI specifies removing ground plane under THS4304DGKR to reduce parasitic capacitance, using short direct traces for feedback paths, placing 0.1-µF ceramic bypass caps within 2 mm of VS+ and VS− pins, and grounding the exposed thermal pad. These practices prevent peaking, maintain phase margin, and ensure THS4304DGKR delivers its rated 3-GHz bandwidth and –84 dBc distortion.