Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Texas Instruments THS4601IDDARG3

Part No.:
THS4601IDDARG3
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
8-PowerSOIC (0.154", 3.90mm Width)
Datasheet:
AetrixTHS4601IDDARG3.pdf
Description:
IC OPAMP GP 1 CIRC 8SOPWRPAD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,481

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

THS4601IDDARG3 from Texas Instruments is a high-speed FET-input operational amplifier optimized for wideband transimpedance gain stages, photodiode amplification, and high-impedance signal conditioning. It delivers 180 MHz gain-bandwidth product, 100 V/µs slew rate, ±15 V supply operation, 5.4 nV/√Hz input voltage noise, and 100 pA maximum input bias current - enabling low-noise amplification of weak current-mode signals in optical sensing and test equipment.

For engineers reviewing the THS4601IDDARG3 datasheet, THS4601IDDARG3 pinout, THS4601IDDARG3 application, or THS4601IDDARG3 equivalent, this device is selected when simultaneous high bandwidth, high input impedance (>10⁹ Ω), rail-to-rail output swing capability (±13.4 V @ ±15 V), and low input current noise (5.5 fA/√Hz) are required in precision analog front-ends.

Technical Context

The THS4601IDDARG3 employs a JFET-input stage with differential pair topology, supporting unity-gain stability and operating across ±5 V to ±15 V supplies. Its 109 Ω || 6.5 pF common-mode input impedance minimizes loading on high-Z sources like photodiodes, while its 0.1 Ω closed-loop output impedance ensures drive capability into 1 kΩ loads with minimal gain error.

Designed for transimpedance applications, it features internal compensation that maintains phase margin >45° under typical RF/CF configurations. The device's 170 ns settling time (0.01%, 5 V step) and −96 dBc third-harmonic distortion at 1 MHz support high-fidelity signal reconstruction in measurement systems.

Key Specifications

Parameter Value and Actual Design Meaning
Gain-Bandwidth Product 180 MHz - enables stable transimpedance gains up to 100× with >1 MHz bandwidth using 100 kΩ RF and 18 pF diode capacitance.
Slew Rate 100 V/µs - supports full-scale 10 Vpp output transitions in ≤100 ns, critical for pulse-shaped optical receiver outputs.
Input Bias Current Max 100 pA at 25°C - reduces DC error in high-RF transimpedance circuits (e.g., 1 MΩ feedback yields <100 µV offset).
Input Voltage Noise 5.4 nV/√Hz - dominates total input-referred noise below ~100 kHz, defining SNR floor for sub-mV signal amplification.
Supply Voltage Range ±5 V to ±15 V - allows direct interface with legacy ±12 V or ±15 V instrumentation rails without level-shifting.
Output Voltage Swing ±13.4 V min @ RL = 1 kΩ, ±15 V supply - provides >26 Vpp dynamic range for high-amplitude signal capture before clipping.
Common-Mode Input Range ±13.0 V @ ±15 V supply - accommodates biased photodiode anodes/cathodes without input stage saturation.

Pinout & Package

THS4601IDDARG3 is housed in an SOIC-8 package with PowerPAD™ (DDA suffix), featuring thermal-enhanced copper slug for improved power dissipation (θJA = 66.6°C/W). Pin 1, 5, and 8 are no-connect terminals; functional pins follow standard op-amp configuration.

Pin/Terminal Circuit Role Design Meaning
IN− (Pin 2) Inverting input Primary node for photodiode cathode connection in transimpedance topology; low input capacitance (3.5 pF) preserves bandwidth.
IN+ (Pin 3) Noninverting input DC bias reference point; tied to ground or virtual ground to set common-mode operating point.
VS− (Pin 4) Negative supply Accepts −15 V rail; must be decoupled locally to suppress PSRR-induced noise at high frequencies.
OUT (Pin 6) Amplifier output Drives 1 kΩ load with <0.1% gain error; requires series resistor (20–50 Ω) for RF layout stability.
VS+ (Pin 7) Positive supply Accepts +15 V rail; PowerPAD™ thermal pad must be soldered to PCB ground plane for thermal compliance.

Key Features

Feature Design Value
Unity-gain stable architecture Eliminates need for external compensation in G = +1 configurations, simplifying photodiode buffer designs.
FET-input stage Enables >10⁹ Ω input impedance, reducing leakage-induced drift in high-resistance sensor interfaces.
Low input current noise 5.5 fA/√Hz ensures minimal added noise in transimpedance circuits dominated by RF thermal noise.
High PSRR/CMRR ≥86 dB PSRR and ≥90 dB CMRR maintain accuracy in noisy industrial or mixed-signal environments.
PowerPAD™ thermal enhancement Reduces junction-to-ambient thermal resistance to 66.6°C/W, enabling sustained 10 mA output current at 85°C ambient.

Applications

Wideband Photodiode Amplifier High-Speed Transimpedance Gain Stage

Use Scenario: Amplifying nanoampere-level photocurrent from fast-response silicon photodiodes in fiber-optic receivers or laser rangefinders.

IC Role / Device Role / Timing Role: Transimpedance amplifier converting diode current to voltage with minimal phase lag and overshoot.

Use Value: 180 MHz GBW and 100 pA IIB enable >4 MHz −3 dB bandwidth with 100 kΩ RF and 18 pF diode capacitance per Figure 1.

Use Scenario: Signal conditioning stage in automated test equipment (ATE) where DAC output currents require precise, high-bandwidth voltage conversion.

IC Role / Device Role / Timing Role: Current-to-voltage converter with rail-to-rail output swing for full-scale DAC current ranges (e.g., 0–2 mA).

Use Value: ±13.4 V output swing at ±15 V supply supports 26 Vpp dynamic range, preserving resolution in 16-bit DAC systems.

Test and Measurement Systems Active Filtering

Use Scenario: Front-end gain block in oscilloscope vertical amplifiers or spectrum analyzer IF stages requiring flat frequency response to 100 MHz.

IC Role / Device Role / Timing Role: High-Z buffer and gain stage maintaining signal integrity across multi-decade bandwidth.

Use Value: 5.4 nV/√Hz input voltage noise and −96 dBc 3rd harmonic distortion at 1 MHz ensure accurate amplitude measurement of low-level signals.

Use Scenario: Implementing 4th-order Sallen-Key or multiple-feedback active filters in medical imaging or communications baseband chains.

IC Role / Device Role / Timing Role: Precision op-amp core providing low-distortion, high-Q filtering with programmable cutoff up to 50 MHz.

Use Value: Unity-gain stability and 100 V/µs slew rate prevent slew-induced distortion in high-Q filter responses near cutoff.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed FET-input op-amp applications.

Alternative Part Technical Difference Application Difference Selection Advice
OPA655IDBVR Higher 400 MHz GBW but limited to ±5 V supply; 290 V/µs slew rate; higher 6 nV/√Hz noise. Better suited for single-supply, ultra-wideband AC-coupled systems (e.g., RF envelope detection); not viable for ±12/±15 V legacy instrumentation. Select OPA655IDBVR only when supply headroom is constrained to 5 V and bandwidth >200 MHz is mandatory.
THS4631D Same SOIC-8 DDA package; lower 120 MHz GBW; 70 V/µs slew rate; 10 pA max IIB; identical ±15 V operation. Optimized for lower-power, cost-sensitive transimpedance designs where 3 dB bandwidth <3 MHz suffices. Choose THS4631D when system bandwidth requirement is ≤3 MHz and quiescent current <9 mA is prioritized over speed.

Compared with OPA655IDBVR and THS4631D, THS4601IDDARG3 uniquely balances 180 MHz bandwidth, ±15 V operation, and 100 pA input bias current - making it the only option among the three capable of driving 100 kΩ transimpedance gains with >4 MHz bandwidth while interfacing directly with industrial ±15 V rails.

Availability

THS4601IDDARG3 is available at Aetrix Electronics and suitable for optical sensing, automated test equipment, and high-precision instrumentation requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for THS4601IDDARG3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in high-performance op-amps and precision signal chain solutions.

The THS4601IDDARG3 belongs to TI's high-speed FET-input op-amp family, engineered specifically for transimpedance amplification, photodiode interfacing, and wideband signal conditioning in test, measurement, and optical systems.

FAQ

What is the maximum recommended supply voltage for THS4601IDDARG3?

The absolute maximum supply voltage for THS4601IDDARG3 is ±16.5 V, but the specified operating range is ±5 V to ±15 V. Operating at ±15 V maximizes output swing (±13.4 V) and bandwidth performance, while staying within safe margins. Exceeding ±15 V risks reliability degradation per TI's absolute maximum ratings table.

Does THS4601IDDARG3 require external compensation for unity-gain stability?

No, THS4601IDDARG3 is internally compensated for unity-gain stability. The datasheet explicitly states "Unity Gain Stable" in its FEATURES section, and Figure 8 (Open-Loop Gain and Phase vs Frequency) confirms >45° phase margin at unity gain. External compensation is unnecessary unless custom bandwidth shaping is required.

What is the thermal resistance (θJA) of THS4601IDDARG3, and how does PowerPAD™ affect it?

THS4601IDDARG3 has θJA = 66.6°C/W when the PowerPAD™ thermal pad is soldered to a minimum 1-in² copper area on the PCB. This is significantly lower than the 170°C/W for standard SOIC-8 (8D) packages. Proper PowerPAD™ connection is mandatory to achieve rated output current and avoid thermal shutdown at 85°C ambient.

Can THS4601IDDARG3 drive a 50 Ω load directly?

THS4601IDDARG3 is not designed for direct 50 Ω driving. Its output stage delivers ±80 mA sourcing/sinking into 20 Ω, but continuous 50 Ω loading causes excessive power dissipation and thermal stress. For 50 Ω interfaces, use a series 45 Ω resistor to isolate the op-amp and match impedance - preserving stability and preventing output stage overload.

How does input bias current vary with temperature in THS4601IDDARG3?

Per the datasheet's electrical specifications, THS4601IDDARG3 exhibits maximum input bias current of 1100 pA at −40°C to +85°C, rising from 100 pA at 25°C. Figure 19 shows exponential increase above 60°C; design margins must account for >10× IIB drift at full temperature range, especially in high-RF transimpedance circuits.

THS4601IDDARG3 Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
8-PowerSOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Amplifier Type:
General Purpose
Number of Circuits:
1
Output Type:
-
Slew Rate:
100V/µs
Gain Bandwidth Product:
180 MHz
-3db Bandwidth:
440 MHz
Current - Input Bias:
30 pA
Voltage - Input Offset:
1 mV
Current - Supply:
10mA
Current - Output / Channel:
-
Voltage - Supply Span (Min):
10 V
Voltage - Supply Span (Max):
30 V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO PowerPad

THS4601IDDARG3 FAQ

1.How can I place an order for THS4601IDDARG3 through Aetrix?

Please submit a Request for Quotation (RFQ) for THS4601IDDARG3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for THS4601IDDARG3 reliable?

The price and inventory of THS4601IDDARG3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for THS4601IDDARG3 is usually 5 days.

3.What payment methods are accepted for THS4601IDDARG3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for THS4601IDDARG3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for THS4601IDDARG3?

THS4601IDDARG3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your THS4601IDDARG3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for THS4601IDDARG3?

For technical support, including THS4601IDDARG3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your THS4601IDDARG3 requirements.

6.How does Aetrix verify that THS4601IDDARG3 is sourced from the original manufacturer or authorized distributors?

All THS4601IDDARG3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that THS4601IDDARG3 meets industry standards.

7.What is the process for return or replacement of THS4601IDDARG3?

All THS4601IDDARG3 units undergo pre-shipment inspection (PSI). If there is an issue with THS4601IDDARG3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The THS4601IDDARG3 part is unused and in its original packaging.

Return procedure for THS4601IDDARG3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

THS4601IDDARG3 Tags

  • THS4601IDDARG3
  • THS4601IDDARG3 PDF
  • THS4601IDDARG3 Datasheet
  • THS4601IDDARG3 Specifications
  • THS4601IDDARG3 Images
  • Texas Instruments
  • Texas Instruments THS4601IDDARG3
  • Buy THS4601IDDARG3
  • THS4601IDDARG3 Price
  • THS4601IDDARG3 Distributor
  • THS4601IDDARG3 Supplier
  • THS4601IDDARG3 Wholesale
Related Products
LM358DT
LM358DT

STMicroelectronics

LM358DR
LM358DR

Texas Instruments

LM2904DR
LM2904DR

Texas Instruments

LM358ADR
LM358ADR

Texas Instruments

LM2904DGKR
LM2904DGKR

Texas Instruments

LM324DR
LM324DR

Texas Instruments

MCP6006T-E/OT
MCP6006T-E/OT

Microchip Technology

MCP6006UT-E/OT
MCP6006UT-E/OT

Microchip Technology

LM324PWR
LM324PWR

Texas Instruments

LM2902PWR
LM2902PWR

Texas Instruments

LM2902DR
LM2902DR

Texas Instruments

LM358P
LM358P

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER