onsemi TIP102TU

Overview

TIP102TU from ON Semiconductor (formerly Fairchild) is an NPN epitaxial silicon Darlington transistor in TO-220 package, rated for 100 V collector-emitter sustaining voltage (V_CEO(sus)), 8 A DC collector current, and 80 W case-power dissipation at T_C = 25°C; it integrates monolithic base-emitter shunt resistors and delivers h_FE ≥ 1000 at I_C = 3 A, V_CE = 4 V - used in industrial motor control, relay drivers, and high-current linear amplifiers.

For engineers reviewing the TIP102TU datasheet, pinout, applications, or equivalent options, key selection considerations include its 100 V V_CEO(sus), built-in 10 kΩ/0.6 kΩ base-emitter resistors, low 2.0 V V_CE(sat) at I_C = 3 A/I_B = 6 mA, thermal derating curve, and complementary pairing with TIP107.

Technical Context

This Darlington pair uses monolithic epitaxial silicon construction with integrated base-emitter shunt resistors (R1 = 10 kΩ, R2 = 0.6 kΩ), enabling self-biasing and reducing external component count. It operates as a single high-gain, high-voltage switching or linear amplification device with no internal isolation between stages.

The device exhibits V_CEO(sus) = 100 V (I_C = 30 mA, I_B = 0), V_CE(sat) = 2.0 V (I_C = 3 A, I_B = 6 mA), and h_FE ≥ 1000 under specified conditions - supporting robust turn-on in inductive load switching while maintaining safe SOA up to 5 ms at 100 V/8 A.

Key Specifications

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab). Mounting surface is electrically connected to collector (Pin 2); tab must be isolated from heatsink unless collector is at system ground potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Compared with MJ11016G and TIP122, the TIP102TU offers integrated base resistors and TO-220 form factor ideal for space-constrained industrial controls, whereas MJ11016G suits high-power amplifiers needing TO-3 thermal mass, and TIP122 provides drop-in compatibility with identical specs and modern supply chain support.

Availability

TIP102TU is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor controllers, linear audio output stages, and high-voltage lamp dimmers requiring stable component supply across multi-year production cycles.

Supply support for TIP102TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The TIP102TU belongs to ON Semiconductor's legacy power bipolar transistor family, designed specifically for ruggedized industrial switching and linear amplification where high gain, high voltage, and integrated biasing simplify circuit implementation.

FAQ

What is the maximum collector-emitter sustaining voltage for TIP102TU?

The TIP102TU has a collector-emitter sustaining voltage (V_CEO(sus)) of 100 V, tested at I_C = 30 mA with I_B = 0. This rating reflects its ability to block voltage in the off state under transient overvoltage conditions typical in inductive load switching. The TIP102TU maintains this rating across its full operating temperature range and is validated per Fairchild's Rev. 1.0.0 datasheet. Designers should apply appropriate safety margins and snubbing networks when operating near this limit.

Does TIP102TU include internal base-emitter resistors?

Yes, the TIP102TU integrates monolithic base-emitter shunt resistors: R1 = 10 kΩ and R2 = 0.6 kΩ. These resistors ensure reliable turn-off by providing a defined discharge path for base charge, eliminating the need for external pull-down components. This feature is confirmed in the "Equivalent Circuit" diagram on page 1 of the official datasheet and directly impacts driver simplicity and switching consistency in the TIP102TU application.

What is the DC current gain (h_FE) specification for TIP102TU?

The TIP102TU guarantees h_FE ≥ 1000 at V_CE = 4 V and I_C = 3 A, with a typical value up to 20,000 under those conditions. This high gain enables low base drive current - approximately 3 mA suffices to fully saturate the TIP102TU at 3 A collector current. The h_FE parameter is measured under pulsed conditions (≤2% duty cycle) and remains stable across industrial temperature ranges, as documented in the Electrical Characteristics table on page 2 of the TIP102TU datasheet.

Can TIP102TU be used in linear amplifier applications?

Yes, the TIP102TU is qualified for linear operation with a maximum junction temperature of 150°C and safe operating area (SOA) curves provided in Figure 5 of its datasheet. Its low V_CE(sat) and high h_FE support stable Class-A/B audio output stages and precision current sources. When used linearly, the TIP102TU requires careful thermal design due to its 80 W case dissipation limit, and must remain within SOA boundaries - especially at higher V_CE and I_C combinations - to avoid second breakdown.

What is the package type and thermal mounting requirement for TIP102TU?

The TIP102TU uses a TO-220 package with three leads (Base, Collector, Emitter), where the metal tab is electrically connected to the collector (Pin 2). Because the tab conducts high current and dissipates significant heat, it must be mounted to a heatsink using an electrically insulating thermal pad or mica washer unless the collector node is at chassis ground potential. Mechanical mounting torque must not exceed 0.5 N·m to avoid package damage, and thermal interface material must be applied uniformly to maximize heat transfer from the TIP102TU tab to heatsink.