onsemi TIP107

Overview

TIP107 from onsemi is a PNP silicon Darlington power transistor in TO-220AB package, rated for 100 V_CEO(sus), 8 A continuous collector current, 80 W power dissipation at T_C = 25°C, with built-in base-emitter shunt resistors and h_FE = 1000 (min) at I_C = 3.0 A - designed for medium-power linear amplification and low-speed switching in industrial control loads.

For engineers reviewing the TIP107 datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO(sus) = 100 V, R_JC = 1.56 °C/W, integrated base shunt resistors, saturation voltage ≤2.5 V at 8 A, and TO-220AB mechanical compatibility with heatsink mounting.

Technical Context

The TIP107 implements a monolithic Darlington pair with two cascaded PNP transistors and internal base-emitter shunt resistors (≈8.0 kΩ and ≈120 Ω), enabling simplified drive requirements and stable biasing without external components. Its safe operating area (SOA) is defined by second-breakdown limits up to 100 V and thermally limited dissipation at elevated case temperatures.

It operates within –65°C to +150°C junction temperature range, supports unclamped inductive load energy of 30 mJ (L = 50 mH, V_CC = 20 V), and exhibits Cob = 300 pF at V_CB = 10 V - confirming suitability for moderate-frequency switching below 100 kHz where capacitive loading and thermal management are critical.

Key Specifications

Pinout & Package

Package: TO-220AB (Case 221A, Style 1), 4-terminal plastic power package with tab-connected collector; requires insulated mounting hardware when collector is not at chassis ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Compared with TIP105 and MJD107G, the TIP107 provides the highest voltage ruggedness (100 V) in through-hole form factor, making it optimal for industrial 48–72 V bus applications where second-breakdown immunity and mechanical robustness are prioritized over miniaturization.

Availability

TIP107 is available at Aetrix Electronics and suitable for DC motor control, relay driving, linear power regulation, and high-current LED dimming requiring stable component supply across extended production lifecycles.

Supply support for TIP107 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The TIP107 belongs to onsemi's legacy silicon power transistor family, engineered for rugged, cost-effective medium-power amplification and switching in industrial controls, power supplies, and electromechanical interfaces.

FAQ

What is the maximum collector-emitter sustaining voltage for TIP107?

The TIP107 has a minimum collector-emitter sustaining voltage V_CEO(sus) of 100 Vdc at I_C = 30 mAdc and I_B = 0. This rating reflects its ability to block transient voltages during switching events in inductive loads - a key differentiator from lower-voltage variants like TIP105 (60 V) and TIP106 (80 V). The 100 V rating makes TIP107 suitable for 48 V industrial systems with safety margin.

Does TIP107 require an external base pull-down resistor?

No, the TIP107 does not require an external base pull-down resistor because it integrates monolithic base-emitter shunt resistors (≈8.0 kΩ and ≈120 Ω). These internal resistors ensure reliable turn-off when base drive is removed, eliminating leakage-induced false triggering - a critical feature for fail-safe relay and motor control circuits where unintended activation must be avoided.

What is the thermal resistance from junction to case for TIP107?

The TIP107 has a maximum junction-to-case thermal resistance R_JC of 1.56 °C/W. This value defines the temperature rise across the silicon die to the metal tab under steady-state conduction. When mounted to a heatsink with low thermal interface resistance, this enables dissipation of up to 51 W before reaching the 150°C maximum junction temperature at 25°C case temperature - essential for continuous high-current operation.

Can TIP107 be used as a direct replacement for TIP105 or TIP106?

The TIP107 shares identical TO-220AB package, pinout (Style 1), and Darlington architecture with TIP105 and TIP106, but differs critically in V_CEO(sus): 100 V vs. 60 V and 80 V respectively. It can replace them in higher-voltage designs, but substituting downward (e.g., TIP107 → TIP105) risks breakdown in 72 V systems. Always verify voltage stress margins before cross-substitution.

What is the typical DC current gain (h_FE) of TIP107 at 8 A collector current?

At I_C = 8.0 Adc and V_CE = 4.0 Vdc, the TIP107 guarantees a minimum h_FE of 200, with typical performance exceeding 1000 at lower currents (I_C = 3.0 A). This high gain reduces required base drive to approximately 40 mA for full 8 A conduction - simplifying microcontroller or logic-level interface design without additional driver stages.