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onsemi TIP111G

Part No.:
TIP111G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-220-3
Datasheet:
AetrixTIP111G.pdf
Description:
TRANS NPN DARL 80V 2A TO-220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:517

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Product details

Overview

TIP111G from onsemi is an NPN silicon Darlington power transistor in TO-220AB package, designed for medium-power linear amplification and low-speed switching. It delivers 2.0 A continuous collector current, sustains 80 V collector-emitter voltage (VCEO(sus)), and features high DC current gain (hFE = 2500 typ at IC = 1.0 A), with built-in base-emitter shunt resistors enabling simplified drive in motor control and relay driver circuits.

For engineers reviewing the TIP111G datasheet, pinout, applications, or equivalent options, key selection criteria include its 80 V VCEO(sus), 2.5 V max VCE(sat) at 2.0 A, monolithic Darlington architecture with integrated bias resistors, thermal resistance of 2.5 °C/W (junction-to-case), and Pb-free TO-220AB packaging suitable for industrial power stage designs requiring robustness and ease of heatsinking.

Technical Context

The TIP111G implements a monolithic Darlington pair with two cascaded NPN transistors and internal base-emitter shunt resistors (~8.0 kΩ and ~120 Ω), eliminating external bias components. Its safe operating area (SOA) is defined by thermal limits (50 W @ TC = 25°C) and secondary breakdown constraints, with pulse operation supported up to 10% duty cycle at TJ(pk) ≤ 150°C.

Electrical behavior is characterized by low saturation voltage (≤2.5 V at IC = 2.0 A, IB = 8.0 mA), high input impedance due to Darlington configuration, and temperature-stable hFE across –65°C to +150°C junction range. Dynamic performance includes 100 pF output capacitance (Cob) and switching times optimized for <1 kHz switching applications.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO(sus) 80 V min - Sustains 80 V between collector and emitter under switching stress with IB = 0, enabling use in 48 V DC systems with margin.
IC (continuous) 2.0 A - Supports sustained load currents up to 2 A without derating when mounted on adequate heatsink (TC ≤ 25°C).
hFE 2500 typ @ IC = 1.0 A - Enables direct TTL/CMOS logic-level drive with ~0.4 mA base current for full 1 A output.
VCE(sat) 2.5 V max @ IC = 2.0 A, IB = 8.0 mA - Limits conduction loss to ≤5 W at 2 A, critical for thermal management in linear regulators.
RJC 2.5 °C/W - Allows calculation of junction temperature rise: ΔTJ = PD × 2.5, supporting thermal design with standard TO-220 heatsinks.
PD @ TC = 25°C 50 W - Maximum dissipation achievable only with case temperature held at 25°C via forced cooling or large heatsink.
VBE(on) 2.8 V max @ IC = 2.0 A - Reflects dual-base-emitter drop; informs minimum driver supply voltage needed for saturation.

Pinout & Package

Package: TO-220AB (Case 221A), 4-pin outline with pins 1–4 arranged linearly; metal tab is electrically connected to collector (pins 2 and 4). Requires mechanical isolation when mounting to heatsink unless collector is at ground potential.

Pin/Terminal Circuit Role Design Meaning
1 Base Control input node; accepts low-current drive (≤50 mA) to switch up to 2 A; internal shunt resistors simplify biasing.
2 Collector Main power input/output node; electrically tied to metal tab; must be isolated from heatsink unless system ground referenced.
3 Emitter Power return path; carries full load current; common reference for base drive in low-side switch configurations.
4 Collector Second collector terminal - redundant connection to same internal node as pin 2, enhancing current handling and thermal path.

Key Features

Feature Design Value
Monolithic Darlington structure Integrates two NPN transistors and base-emitter shunt resistors in one die, eliminating external bias network and reducing PCB footprint.
High hFE (2500 typ) Enables direct interface with microcontroller GPIOs or logic gates without external current amplification, lowering BOM count.
80 V VCEO(sus) Supports operation in 48 V industrial buses and automotive subsystems with safety margin against transients and inductive kickback.
Pb-free TO-220AB package Complies with RoHS Directive 2011/65/EU; compatible with standard lead-free reflow profiles and automated assembly processes.
2.5 °C/W RJC Facilitates predictable thermal design: 50 W dissipation raises junction 125°C above case, guiding heatsink selection for target TJ.

Applications

DC Motor Control Relay Driver

Use Scenario: Driving 24–48 V brushed DC motors in industrial actuators and HVAC dampers.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and enable via base signal; handles stall currents up to 2 A.

Use Value: High hFE eliminates need for driver transistor; 80 V rating withstands back-EMF spikes during commutation.

Use Scenario: Activating 12–48 V electromagnetic relays in PLC I/O modules and building automation panels.

IC Role / Device Role / Timing Role: Power switch interfacing microcontroller outputs to relay coils; operates in saturated on-state for minimal coil voltage drop.

Use Value: 2.5 V max VCE(sat) ensures ≥90% of supply reaches relay coil, guaranteeing reliable pull-in even at low VCC.

Linear Regulator Pass Element Heater/Solenoid Driver

Use Scenario: As pass transistor in adjustable 0–36 V, 1.5 A linear power supplies for lab equipment and analog test fixtures.

IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output; dissipates heat proportional to (VIN − VOUT) × ILOAD.

Use Value: 50 W PD and 2.5 °C/W RJC allow stable operation with modest heatsinking at full load across wide input-output differentials.

Use Scenario: Switching resistive heating elements or 24 V solenoids in vending machines, coffee makers, and fluid control valves.

IC Role / Device Role / Timing Role: Medium-speed on/off switch (≤100 Hz) managing thermal mass-driven loads with slow response requirements.

Use Value: Built-in shunt resistors prevent unintended turn-on from leakage; 25 mJ unclamped inductive energy rating protects against solenoid flyback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
TIP120G Higher VCEO(sus) = 100 V, same TO-220AB package and pinout; hFE = 1000 min (vs. 2500 typ for TIP111G). Preferred for 72 V or 96 V battery systems where 80 V margin is insufficient; lower gain requires stronger base drive. Select TIP120G when higher voltage blocking is mandatory and driver capability supports ≥1 mA base current.
MJD112G SOT-223 surface-mount package (vs. through-hole TO-220AB); identical VCEO(sus) = 80 V and hFE = 2500 typ, but PD = 1.5 W @ TA. Suitable for space-constrained PCBs with low-power loads (<500 mA); not interchangeable without layout redesign. Choose MJD112G only for compact, low-current designs where thermal performance allows ambient-only cooling.

Compared with TIP111G, TIP120G offers greater voltage headroom at the cost of reduced DC gain, while MJD112G provides identical electrical specs in a surface-mount form factor with drastically lower power handling-neither is pin-compatible without board revision, and both require reassessment of thermal and drive circuit design.

Availability

TIP111G is available at Aetrix Electronics and suitable for industrial motor control, relay interface, and linear regulator applications requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for TIP111G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The TIP111G belongs to onsemi's legacy plastic medium-power complementary transistor family, engineered for cost-sensitive, high-reliability linear and switching applications in industrial controls and power conversion where ruggedness and ease of use are prioritized over ultra-high frequency performance.

FAQ

What is the maximum continuous collector current rating for the TIP111G?

The TIP111G is rated for 2.0 A continuous collector current (IC) when the case temperature (TC) is maintained at 25°C. This rating assumes proper heatsinking; current must be derated by 0.4 W/°C above 25°C case temperature. At TC = 75°C, the usable continuous current drops to approximately 1.0 A to stay within the 50 W total power dissipation limit. The TIP111G also supports 4.0 A peak collector current for short-duration pulses.

Does the TIP111G have built-in base resistors, and how do they affect drive requirements?

Yes, the TIP111G integrates monolithic base-emitter shunt resistors (~8.0 kΩ and ~120 Ω) as part of its Darlington structure. These resistors ensure reliable turn-off by bleeding away stored charge and prevent false triggering from leakage currents. As a result, the TIP111G can be driven directly by logic-level signals (e.g., 5 V microcontroller GPIO) with only a series current-limiting resistor-typically 1–2.2 kΩ for 1 A output-eliminating the need for discrete base bias networks.

What is the safe operating area (SOA) limitation for the TIP111G in linear mode?

The TIP111G SOA is bounded by thermal limits (50 W at TC = 25°C), secondary breakdown, and bonding wire current capacity. In linear operation, the device must remain below the SOA curve shown in Figure 7 of the datasheet: at VCE = 40 V, maximum continuous IC is ~1.2 A; at VCE = 20 V, it rises to ~2.0 A. Exceeding these boundaries risks localized hot-spot formation and permanent failure. Derating is essential for reliability-designers should verify TJ using RJC = 2.5 °C/W and ambient conditions.

Can the TIP111G be used as a direct replacement for the TIP110G?

No, the TIP111G is not a direct replacement for the TIP110G in all designs. While both share identical TO-220AB packaging, pinout, and Darlington architecture, the TIP111G has a higher collector-emitter sustaining voltage (80 V vs. 60 V) and slightly different hFE profile. Circuits relying on the lower VCEO of the TIP110G may experience overstress if substituted without verifying transient voltage margins. Always validate SOA, thermal, and drive compatibility before interchange.

Is the TIP111G suitable for switching inductive loads like solenoids, and what protection is recommended?

Yes, the TIP111G is commonly used to switch solenoids and other inductive loads, with a specified unclamped inductive load energy rating of 25 mJ. To ensure reliability, a flyback diode (e.g., 1N4007 or faster 1N5819) must be placed across the load with cathode to VCC. For high-reliability applications, consider adding a snubber network (RC across collector-emitter) to suppress voltage overshoot during turn-off. The TIP111G's 80 V VCEO(sus) provides margin against typical 24–48 V system transients.

TIP111G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
Transistor Type:
NPN - Darlington
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):
2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 1A, 4V
Power - Max:
2 W
Frequency - Transition:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

TIP111G FAQ

1.How can I place an order for TIP111G through Aetrix?

Please submit a Request for Quotation (RFQ) for TIP111G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TIP111G reliable?

The price and inventory of TIP111G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TIP111G is usually 5 days.

3.What payment methods are accepted for TIP111G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TIP111G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TIP111G?

TIP111G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TIP111G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TIP111G?

For technical support, including TIP111G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TIP111G requirements.

6.How does Aetrix verify that TIP111G is sourced from the original manufacturer or authorized distributors?

All TIP111G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TIP111G meets industry standards.

7.What is the process for return or replacement of TIP111G?

All TIP111G units undergo pre-shipment inspection (PSI). If there is an issue with TIP111G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TIP111G part is unused and in its original packaging.

Return procedure for TIP111G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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