My Inquiry
My Account
onsemi TIP112TU
- Part No.:
- TIP112TU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
TIP112TU.pdf
- Description:
- TRANS NPN DARL 100V 2A TO-220-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,105
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TIP112TU from ON Semiconductor is an NPN epitaxial silicon Darlington transistor in TO-220 package, designed for medium-power linear and switching applications requiring high DC current gain (hFE ≥ 1000 at IC = 1 A), low VCE(sat) (2.5 V max at IC = 2 A, IB = 8 mA), and 100 V collector-emitter sustaining voltage. It integrates monolithic base-emitter shunt resistors (R1 ≈ 10 kΩ, R2 ≈ 0.6 kΩ) and supports industrial motor control, relay drivers, and power supply regulation.
For engineers reviewing the TIP112TU datasheet, pinout, applications, or equivalent options, key selection criteria include its 100 V VCEO rating, 2 A continuous collector current, built-in bias resistors eliminating external base components, thermal derating above 25°C case temperature, and compatibility with complementary PNP devices TIP115/TIP116/TIP117.
Technical Context
The TIP112TU implements a monolithic Darlington pair with integrated base-emitter shunt resistors to ensure reliable turn-off and reduce external component count. Its structure delivers high hFE (≥1000 at IC = 1 A) while maintaining low VCE(sat) (≤2.5 V) under rated switching conditions.
Designed for industrial-grade operation, it supports junction temperatures up to 150°C and exhibits stable ICEO (≤2 mA at VCE = 50 V) and ICBO (≤1 mA at VCB = 100 V), enabling robust performance in ambient-temperature-variable environments without active cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Maximum collector-emitter voltage before breakdown; enables use in 48 V and 72 V DC systems with safety margin. |
| hFE (min) | 1000 @ IC = 1 A - High current gain reduces required base drive current, simplifying driver stage design. |
| VCE(sat) | 2.5 V max @ IC = 2 A, IB = 8 mA - Low saturation voltage minimizes conduction loss and heat generation in switching mode. |
| IC (DC) | 2 A - Continuous collector current rating defines maximum steady-state load-handling capability. |
| PC (TC = 25°C) | 50 W - Maximum power dissipation at case temperature of 25°C; requires heatsinking for sustained operation. |
| R1 / R2 | ≈10 kΩ / ≈0.6 kΩ - Integrated base-emitter shunt resistors provide self-biasing and ensure device turns off reliably without external pull-down. |
Pinout & Package
Package: TO-220 3L (Single Gauge), through-hole mounting, thermally enhanced plastic case with metal tab electrically connected to collector.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input node | Receives base current to activate Darlington pair; internal R1/R2 network ensures defined bias and turn-off behavior. |
| 2 (Collector) | High-current output node | Connected to metal tab; must be isolated from heatsink unless electrically referenced to same potential as collector circuit. |
| 3 (Emitter) | Current return path | Common emitter connection; carries full load current and serves as reference for base drive loop. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic Darlington with integrated resistors | Eliminates need for external base pull-down and bias resistors, reducing BOM count and PCB area in relay/motor driver designs. |
| 100 V VCEO rating | Supports operation in 72 V nominal battery systems (e.g., industrial UPS, telecom power) with 20%+ voltage headroom. |
| Low VCE(sat) ≤ 2.5 V | Reduces power loss to ≤5 W at 2 A load, lowering thermal stress and enabling smaller heatsinks in space-constrained enclosures. |
| hFE ≥ 1000 at 1 A | Allows direct drive from microcontroller GPIO (with series resistor) without intermediate amplification stage in low-frequency switching. |
Applications
| Industrial Motor Control | DC Power Supply Regulation |
|---|---|
Use Scenario: Driving 24–48 V brushed DC motors in factory automation actuators with PWM-based speed control. IC Role / Device Role / Timing Role: Main switching element in low-frequency (<1 kHz) H-bridge half-bridge or single-ended configuration. Use Value: High hFE and integrated resistors simplify gate/base drive design; 100 V rating accommodates back-EMF spikes during motor commutation. | Use Scenario: Series pass transistor in adjustable linear regulators delivering up to 2 A output current. IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output by dissipating excess input-output differential voltage. Use Value: Low VCE(sat) and 50 W PC rating enable stable 2 A operation with moderate heatsinking; built-in R1/R2 improves regulation stability under light loads. |
| Relay and Solenoid Driver | LED Array Power Switch |
Use Scenario: Controlling 12–24 V industrial relays and solenoids in PLC I/O modules. IC Role / Device Role / Timing Role: High-gain switch turning on/off inductive loads with minimal base current from logic-level signals. Use Value: Integrated shunt resistors prevent false turn-on from leakage or noise; 2 A rating covers >95% of standard industrial relay coils. | Use Scenario: Constant-current switching for high-brightness LED arrays in signage or emergency lighting. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink regulating LED string current up to 2 A. Use Value: Precise hFE consistency and low VCE(sat) improve current accuracy and thermal efficiency over temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BD679A | VCEO = 80 V, hFE = 750 min @ IC = 1 A, TO-126 package | Limited to ≤48 V systems; lower gain increases base drive requirement; smaller package limits power handling. | Choose BD679A only when board space is constrained and voltage requirements are ≤48 V. |
| TIP122 | VCEO = 100 V, hFE = 1000 min @ IC = 1 A, identical TO-220 package, but no integrated resistors | Requires external base-emitter resistor for reliable turn-off; otherwise functionally interchangeable in linear mode. | Select TIP122 if external bias control is preferred or if legacy designs already include discrete base network. |
Compared with BD679A and TIP122, the TIP112TU offers guaranteed 100 V blocking and monolithic resistor integration-reducing design risk in industrial 72 V systems and eliminating layout-dependent turn-off reliability issues common with discrete-base variants.
Availability
TIP112TU is available at Aetrix Electronics and suitable for industrial motor control, DC power supply regulation, and relay/solenoid driver applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for TIP112TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The TIP112TU belongs to ON Semiconductor's legacy power bipolar transistor product line, originally developed by Fairchild Semiconductor to serve industrial linear and switching applications demanding ruggedness, simplicity, and proven reliability in harsh environments.
FAQ
What is the maximum continuous collector current for the TIP112TU?
The TIP112TU has a maximum continuous collector current (IC) rating of 2 A at TC = 25°C. This value decreases with rising case temperature due to thermal derating-down to zero at 150°C junction temperature. For sustained 2 A operation, adequate heatsinking must maintain TC ≤ 25°C; actual usable current in real-world designs depends on thermal interface quality and ambient conditions. The TIP112TU datasheet specifies this limit under DC conditions with proper mounting.
Does the TIP112TU require external base resistors?
No, the TIP112TU does not require external base-emitter resistors because it integrates monolithic shunt resistors (R1 ≈ 10 kΩ, R2 ≈ 0.6 kΩ) internally. These resistors ensure reliable turn-off and prevent latch-up from leakage currents. While a series base resistor is still needed for current limiting from the driver, no parallel pull-down is necessary-reducing component count and improving layout robustness compared to discrete-base Darlingtons like the TIP122.
What is the collector-emitter saturation voltage of the TIP112TU?
The TIP112TU has a maximum collector-emitter saturation voltage (VCE(sat)) of 2.5 V when IC = 2 A and IB = 8 mA at TC = 25°C. This parameter defines conduction loss during switching; at full rated current, it results in ≤5 W of dissipated power. VCE(sat) increases with temperature and decreases slightly at lower currents-e.g., ~1.8 V at IC = 1 A-making the TIP112TU suitable for both linear and pulsed operation where thermal management is controlled.
Can the TIP112TU replace the TIP122 in existing designs?
The TIP112TU can replace the TIP122 in many applications, but only if the design benefits from or tolerates its integrated base-emitter resistors. Both share identical TO-220 package, 100 V VCEO, and 2 A IC rating. However, the TIP112TU's internal R1/R2 eliminates the need for an external 1–2 kΩ base-emitter resistor used with the TIP122. Removing that resistor may alter biasing in some legacy circuits-verify turn-off behavior and transient response before substitution. The TIP112TU is not a drop-in replacement without review.
What is the safe operating area (SOA) limitation for the TIP112TU at 100 V?
At VCE = 100 V, the TIP112TU's safe operating area restricts continuous collector current to ≤100 mA to avoid second breakdown, per its SOA curve. Pulse operation allows higher peak currents (e.g., 4 A for ≤1 ms pulses at 2% duty cycle), but DC or high-duty-cycle use at full voltage requires strict current limiting. This limitation arises from thermal and avalanche constraints in the Darlington structure-not just power dissipation-and must be validated against actual waveform conditions in the target application using the official SOA graph from the TIP112TU datasheet.
TIP112TU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 2.5V @ 8mA, 2A
- Current - Collector Cutoff (Max):
- 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 1A, 4V
- Power - Max:
- 2 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
TIP112TU FAQ
1.How can I place an order for TIP112TU through Aetrix?
Please submit a Request for Quotation (RFQ) for TIP112TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TIP112TU reliable?
The price and inventory of TIP112TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TIP112TU is usually 5 days.
3.What payment methods are accepted for TIP112TU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TIP112TU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TIP112TU?
TIP112TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TIP112TU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TIP112TU?
For technical support, including TIP112TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TIP112TU requirements.
6.How does Aetrix verify that TIP112TU is sourced from the original manufacturer or authorized distributors?
All TIP112TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TIP112TU meets industry standards.
7.What is the process for return or replacement of TIP112TU?
All TIP112TU units undergo pre-shipment inspection (PSI). If there is an issue with TIP112TU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TIP112TU part is unused and in its original packaging.
Return procedure for TIP112TU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TIP112TU Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
