onsemi TIP141T

Overview

TIP141T from Fairchild Semiconductor is an NPN epitaxial Darlington transistor in TO-3PF package, rated for 80 V V_CEO, 10 A continuous collector current, and 60 W power dissipation at T_C = 25°C; used in industrial linear power supplies, motor control stages, and high-current switching regulators.

For engineers reviewing the TIP141T datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO = 80 V, h_FE ≥ 1000 @ I_C = 5 A, V_CE(sat) = 2 V @ I_C = 5 A / I_B = 10 mA, built-in base-emitter shunt resistors, and TO-3PF thermal-mechanical compatibility.

Technical Context

The TIP141T integrates monolithic Darlington pair construction with internal 8 kΩ base-to-emitter and 0.12 kΩ emitter-to-base shunt resistors to ensure reliable turn-off and reduce external biasing complexity. It operates as a high-gain, medium-voltage power switch with sustained voltage rating V_CEO(sus) = 80 V under I_C = 30 mA, I_B = 0 conditions.

Its switching performance includes t_D = 0.15 µs, t_R = 0.55 µs, t_STG = 2.5 µs, and t_F = 2.5 µs at V_CC = 30 V, I_C = 5 A, R_L = 6 Ω, enabling use in PWM-driven inductive loads up to ~100 kHz with controlled saturation and storage behavior.

Key Specifications

Pinout & Package

Package: TO-3PF metal can with insulated mounting flange, 3-terminal configuration, designed for high-power thermal management and mechanical robustness in industrial environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Compared with BDW83C and MJ11016, the TIP141T provides guaranteed turn-off assistance via monolithic shunt resistors, simplifies driver design, and maintains consistent gain across its rated current range-making it preferable for cost-sensitive, high-reliability industrial switching where layout space and component count matter.

Availability

TIP141T is available at Aetrix Electronics and suitable for linear power regulation, motor drive output stages, and switching regulator output switches requiring stable component supply and long-term industrial availability.

Supply support for TIP141T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The TIP141T belongs to Fairchild's legacy high-power bipolar transistor product line, engineered for rugged industrial linear and switching applications demanding high current gain, thermal resilience, and proven reliability under sustained load.

FAQ

What is the maximum junction temperature specification for the TIP141T?

The TIP141T has a maximum junction temperature (T_J) rating of 150°C, as specified in its Absolute Maximum Ratings table. This value defines the upper thermal limit for safe silicon operation. Derating is required above T_C = 25°C per the published power derating curve. Thermal design must ensure that actual T_J under worst-case operating conditions remains ≤150°C to prevent parametric shift or failure. The TIP141T datasheet provides the derating slope (mW/°C) for temperatures beyond 25°C.

Does the TIP141T have built-in base-emitter resistors, and what values are they?

Yes, the TIP141T features monolithically integrated base-emitter shunt resistors: approximately 8 kΩ between base and emitter, and 0.12 kΩ between emitter and base. These resistors are explicitly shown in the device's equivalent circuit diagram and serve to improve turn-off speed and prevent unintended conduction due to leakage or stray capacitance. Their presence eliminates the need for external pull-down resistors in many driver circuits, reducing component count and board area for the TIP141T.

What is the collector-emitter sustaining voltage (V_CEO(sus)) for the TIP141T, and how does it differ from V_CEO?

The TIP141T has a collector-emitter sustaining voltage V_CEO(sus) of 80 V, measured under I_C = 30 mA and I_B = 0. This parameter reflects the device's ability to block voltage in active (non-saturated) operation, particularly during switching transitions or fault conditions. Unlike V_CEO (a DC breakdown rating), V_CEO(sus) is a dynamic sustaining rating relevant to real-world switching behavior. Both values are identical for the TIP141T, confirming robust voltage blocking capability across operating modes.

Can the TIP141T be used as a direct replacement for the TIP140F or TIP142F in existing designs?

No-the TIP141T is not a direct replacement for TIP140F (60 V) or TIP142F (100 V), as each variant has distinct voltage ratings. While all three share identical package, pinout, and gain characteristics, substituting them requires verifying that the system's maximum collector-emitter voltage stays within the specific device's V_CEO limit. Using TIP141T in a TIP140F-design may over-spec the voltage rating, whereas using it in a TIP142F-design risks breakdown if voltage exceeds 80 V. Always validate against actual circuit stress for the TIP141T.

What is the safe operating area (SOA) limitation for the TIP141T at 100°C case temperature?

At T_C = 100°C, the TIP141T's maximum continuous collector current is reduced to approximately 4.5 A, based on its published power derating curve (60 W at 25°C, linearly decreasing to 0 W at 175°C). The SOA graph confirms second-breakdown limits constrain pulsed operation: for example, at V_CE = 40 V, the maximum allowable pulse width is ~10 ms at I_C = 5 A. Designers must consult the full SOA plot in the TIP141T datasheet to ensure transient stresses remain within boundaries for the intended duty cycle and voltage.