onsemi TIP29AG

Overview

TIP29AG from onsemi is an NPN silicon power transistor in a TO-220 package, rated for 60 V_CEO, 1.0 A continuous collector current, and 30 W total power dissipation at T_C = 25°C. It delivers DC current gain (h_FE) of 40–75 at I_C = 0.2 A, V_CE = 4 V, and is designed for general-purpose linear amplification and medium-speed switching in industrial power supplies and audio output stages.

For engineers reviewing the TIP29AG datasheet, pinout, applications, or equivalent options, key selection criteria include its 60 V V_CEO rating, 1.0 A I_C capability, TO-220 thermal resistance (R_JC = 4.167 °C/W), and verified performance in amplifier bias networks and relay driver circuits under sustained 25–75°C ambient conditions.

Technical Context

The TIP29AG operates as a medium-power bipolar junction transistor with fixed NPN polarity, requiring external base current control to regulate collector-emitter conduction. Its safe operating area (SOA) is defined by second-breakdown limits up to 1 ms pulses and thermally limited dissipation at case temperatures above 25°C.

Electrical behavior is characterized by V_CE(sat) ≤ 0.7 V at I_C = 1.0 A / I_B = 125 mA, V_BE(on) ≤ 1.3 V under same conditions, and f_T ≥ 3.0 MHz - confirming suitability for audio-frequency amplification and <100 kHz switching applications where gain-bandwidth trade-offs are managed via external biasing.

Key Specifications

Pinout & Package

Package: TO-220 (Case 221A, Style 1), 3-terminal plastic power package with metal tab (collector-connected), lead pitch 2.54 mm, dimensions 10.10 × 15.12 × 4.45 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJD2955G and TIP31C, the TIP29AG provides optimal balance of 60 V rating, 40–75 h_FE, and proven thermal stability in TO-220 - making it preferred for cost-sensitive, medium-voltage linear and switching roles where gain predictability and SOA margin are critical.

Availability

TIP29AG is available at Aetrix Electronics and suitable for industrial power supplies, audio amplifier output stages, and relay driver circuits requiring stable component supply and long-term manufacturing continuity.

Supply support for TIP29AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The TIP29AG belongs to onsemi's legacy plastic power transistor family, engineered for reliability in general-purpose amplifier and switching applications where ruggedness, thermal performance, and Pb-free compliance are mandatory.

FAQ

What is the maximum collector-emitter voltage rating for the TIP29AG?

The TIP29AG has a maximum collector-emitter sustaining voltage (V_CEO(sus)) of 60 Vdc at I_C = 30 mA and I_B = 0. This rating defines the absolute upper limit for DC or peak repetitive voltage across the collector and emitter terminals. Exceeding 60 V risks avalanche breakdown and permanent device failure. The TIP29AG datasheet confirms this value applies specifically to the TIP29AG variant, distinct from the 40 V (TIP29G) and 80 V (TIP29BG) versions in the same family.

Does the TIP29AG have a built-in heatsink connection, and how is it implemented?

Yes, the TIP29AG uses a TO-220 package where pins 2 and 4 are internally connected to the metal tab, which serves as the collector terminal and primary thermal path. This tab must be mechanically and thermally attached to an external heatsink using appropriate mounting hardware and thermal interface material. Electrical isolation is required unless the heatsink is referenced to the collector potential. The R_JC value of 4.167 °C/W assumes proper mounting pressure and surface finish per onsemi's application guidelines.

What is the DC current gain (h_FE) range for the TIP29AG, and under what conditions is it specified?

The TIP29AG exhibits a DC current gain (h_FE) of 40 to 75 when measured at I_C = 0.2 A and V_CE = 4.0 Vdc, with junction temperature maintained at 25°C. This range reflects production lot variation and is guaranteed per onsemi's datasheet. At I_C = 1.0 A, h_FE drops significantly (minimum 15), so bias networks must be designed for worst-case gain to ensure saturation in switching use or linearity in amplification. The TIP29AG's h_FE is not characterized at elevated temperatures in the published data sheet.

Can the TIP29AG be used in switching applications, and what are its key timing limitations?

Yes, the TIP29AG is qualified for medium-speed switching, with documented turn-on time (t_r) and turn-off time (t_f) curves showing sub-microsecond response at V_CC = 10–30 V and I_C/I_B = 10. However, its f_T of ≥3.0 MHz and lack of specified t_on/t_off max values mean it is not recommended for >100 kHz PWM. For reliable switching, base drive must exceed 125 mA to achieve V_CE(sat) ≤ 0.7 V, and inductive loads must stay within the 32 mJ unclamped energy limit per pulse.

Is the TIP29AG RoHS compliant, and what does the 'G' suffix signify?

Yes, the TIP29AG is RoHS compliant and Pb-free, as confirmed by onsemi's datasheet and marking diagram. The 'G' suffix explicitly denotes a Pb-free package per JEDEC standard, and the device meets EU Directive 2011/65/EU. This designation applies to all variants ending in 'G' (e.g., TIP29G, TIP29AG), and the TIP29AG's packaging, plating, and die attach materials are fully compliant - no lead content exceeds 0.1% by weight in homogeneous materials.