onsemi TIP30

Overview

TIP30 from ON Semiconductor is a PNP silicon power transistor in TO−220 package, rated for 100 V_CEO, 1.0 A continuous collector current, and 30 W total power dissipation at T_C = 25°C. It delivers h_FE ≥ 15 at I_C = 1.0 A, V_CE = 4.0 V, and V_CE(sat) ≤ 0.7 V under same conditions - used in linear amplifier stages and medium-power switching circuits such as DC motor drivers and relay interfaces.

For engineers reviewing the TIP30 datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, 100 V blocking capability, thermal resistance R_JC = 4.167 °C/W, unclamped inductive energy rating of 32 mJ, and Pb-free TO−220 package compatibility with standard heatsink mounting.

Technical Context

The TIP30 operates as a medium-power bipolar junction transistor with complementary pairing to NPN TIP29 series. Its safe operating area (SOA) is defined by second-breakdown limits up to 1 ms pulses and thermally limited dissipation at longer durations, validated at T_J(pk) = 150°C.

Electrical behavior includes f_T = 3.0 MHz at I_C = 200 mA, V_CE = 10 V, and h_fe = 20 at 1 kHz small-signal conditions. Switching performance is characterized by turn-on time t_r and turn-off time t_s′, with specified test conditions including V_EB(off) = 2.0 V and I_C/I_B = 10.

Key Specifications

Pinout & Package

TO−220 package (Case 221A, Style 1), with metal tab electrically connected to collector. Mounting hole allows mechanical attachment to heatsink with electrical isolation if required.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD30C and BD140, the TIP30 offers superior 100 V blocking and proven 32 mJ inductive energy handling in through-hole form, making it preferred for industrial relay and motor control where reliability under transient stress is critical.

Availability

TIP30 is available at Aetrix Electronics and suitable for DC motor control, relay driving, linear voltage regulation, and audio amplifier output stages requiring stable component supply, long-term obsolescence management, and traceable Pb-free sourcing.

Supply support for TIP30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (now onsemi) is a global semiconductor supplier specializing in power management, analog, sensors, and discrete devices for automotive, industrial, and cloud power applications.

The TIP30 belongs to the complementary silicon plastic power transistor family designed for general-purpose amplifier and switching applications in cost-sensitive, medium-power systems using compact TO−220 packaging.

FAQ

What is the maximum collector-emitter voltage rating for the TIP30?

The TIP30 has a maximum collector-emitter voltage (V_CEO) rating of 100 V DC. This value applies specifically to the TIP30C variant and is confirmed in the "Maximum Ratings" table of the official ON Semiconductor datasheet (Rev. 13, November 2014). The TIP30G, TIP30AG, and TIP30BG variants have lower V_CEO ratings of 40 V, 60 V, and 80 V respectively - always verify the suffix letter when selecting the TIP30 for voltage-critical designs.

Is the TIP30 pin-compatible with the TIP29 series?

No, the TIP30 is not pin-compatible with the TIP29 series in functional circuit placement - though both share the same TO−220 package and pin numbering (Pin 1 Base, Pins 2&4 Collector, Pin 3 Emitter), they differ in polarity: TIP30 is PNP while TIP29 is NPN. Swapping them without circuit redesign will reverse biasing and cause failure. The TIP30 is complementary - intended for mirrored roles, not direct substitution - in push-pull or dual-rail designs.

What is the typical DC current gain (h_FE) of the TIP30 at 1.0 A collector current?

The TIP30 specifies a minimum DC current gain (h_FE) of 15 when tested at I_C = 1.0 A and V_CE = 4.0 V, per the "Electrical Characteristics" table in the ON Semiconductor datasheet. Typical h_FE may reach 40–75 depending on operating point and temperature, but design must assume ≥15 to guarantee saturation with available base drive - for example, 1.0 A collector current requires ≥67 mA base current to meet this minimum gain.

Does the TIP30 require a heatsink in normal operation?

Yes, the TIP30 requires a heatsink whenever power dissipation exceeds ~2–3 W at ambient temperature, due to its 30 W maximum rating at T_C = 25°C and R_JC = 4.167 °C/W. For instance, at 1.0 A and V_CE = 2.0 V (2 W), case temperature rise would be ~8.3°C - acceptable without heatsink only in low-power linear or pulsed operation. Continuous switching or linear regulation above 1 W demands thermal management to prevent junction overheating beyond 150°C.

What does the 'G' suffix mean in TIP30G?

The 'G' suffix in TIP30G denotes a Pb-free, RoHS-compliant version of the TIP30, as explicitly stated in the ON Semiconductor datasheet's "Marking Diagram" and "Ordering Information" sections. All TIP30G, TIP30AG, TIP30BG, and TIP30CG variants are Pb-free and meet EU Directive 2011/65/EU requirements. The base part number TIP30 without suffix refers to legacy non-Pb-free versions no longer recommended for new designs.