onsemi TIP3055

Overview

TIP3055 from ON Semiconductor is an NPN silicon power transistor designed for general-purpose switching and amplifier applications, with a 60 V_CEO, 15 A_C continuous collector current, 90 W power dissipation at T_C = 25°C, and DC current gain (h_FE) of 20–70 at I_C = 4.0 A - commonly used in linear power supplies, motor drivers, and audio output stages.

For engineers reviewing the TIP3055 datasheet, pinout, applications, or equivalent options, key selection considerations include safe operating area (SOA) compliance, V_CE(sat) ≤ 1.1 V at 4 A, thermal resistance R_JC = 1.39°C/W, and TO-218 (SOT-93) mechanical compatibility in high-current discrete designs.

Technical Context

The TIP3055 operates as a medium-power, high-current NPN bipolar junction transistor optimized for linear and switching operation up to 2.5 MHz f_T. It features a rugged SOA with secondary breakdown limits defined for pulse durations from 1 ms to DC, and thermal design anchored by low R_JC (1.39°C/W) enabling efficient heatsink coupling.

Its electrical behavior is characterized by V_BE(on) = 1.8 V at I_C = 4.0 A, V_CE(sat) = 1.1 V (max) under same conditions, and leakage currents tightly specified: I_CEO ≤ 0.7 mA at V_CE = 30 V, I_CER ≤ 1.0 mA at V_CE = 70 V - supporting stable biasing in high-voltage amplifier and regulator circuits.

Key Specifications

Pinout & Package

Package: SOT-93 (TO-218), case 340D, 4-pin metal package with collector connected to tab (pins 2 and 4), base on pin 1, emitter on pin 3 - requires insulated mounting hardware when collector is not at chassis ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJE13009 and 2N3055, the TIP3055 offers superior thermal resistance (R_JC = 1.39°C/W vs. ~2.5°C/W for TO-220), tighter V_CE(sat) specification, and Pb-free availability - making it preferred for new designs demanding reliability, thermal efficiency, and RoHS compliance in TO-218 form factor.

Availability

TIP3055 is available at Aetrix Electronics and suitable for linear power supplies, audio amplifiers, DC motor controllers, and industrial relay drivers requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for TIP3055 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (now part of onsemi) is a global semiconductor supplier specializing in power management, analog, sensor, and connectivity solutions for automotive, industrial, and cloud power applications.

The TIP3055 belongs to ON Semiconductor's legacy silicon power transistor product line, engineered for robustness, thermal stability, and manufacturability in high-current linear and switching applications.

FAQ

What is the maximum continuous collector current rating for the TIP3055?

The TIP3055 has a maximum continuous collector current (I_C) rating of 15 A at case temperature T_C = 25°C. Derating is required above this temperature per the 0.72 W/°C thermal derating curve. This rating assumes proper heatsinking and adherence to the SOA limits shown in Figure 2 of the official datasheet. The TIP3055 must not exceed its safe operating area under pulsed or transient load conditions.

Does the TIP3055 have a Pb-free version, and how is it marked?

Yes, the Pb-free version of the TIP3055 is designated TIP3055G and uses the same SOT-93 (TO-218) package. It is marked with a "G" suffix in the date code (e.g., AYWWG), where "G" explicitly indicates compliance with lead-free soldering standards. The TIP3055G meets JEDEC J-STD-020 moisture sensitivity level 1 and is compatible with standard reflow profiles for Pb-free assembly.

What is the safe operating area (SOA) limitation for the TIP3055 at DC operation?

At DC operation and T_C = 25°C, the TIP3055's SOA is limited by thermal constraints to approximately 10 A at 6 V_CE, 5 A at 12 V_CE, and 2 A at 30 V_CE, as defined in Figure 2 of the datasheet. These boundaries reflect the intersection of bonding wire current limit, thermal limit, and secondary breakdown limit - all of which must be respected to prevent irreversible device failure during sustained conduction.

Can the TIP3055 be used as a direct replacement for the 2N3055 in existing designs?

The TIP3055 shares the same pinout, voltage/current ratings, and TO-218 package as the 2N3055, but offers tighter specifications: guaranteed V_CE(sat) ≤ 1.1 V (vs. up to 1.5 V for 2N3055) and Pb-free availability. While functionally compatible in most legacy circuits, designers should verify base drive adequacy and thermal margin, as the TIP3055's h_FE range (20–70) is narrower than the 2N3055's (20–100). The TIP3055 is a recommended upgrade where consistency and RoHS compliance matter.

What is the typical base-emitter forward voltage (V_BE(on)) for the TIP3055 under rated conditions?

The typical base-emitter forward voltage (V_BE(on)) for the TIP3055 is 1.8 Vdc at I_C = 4.0 A and V_CE = 4.0 V, as specified in the Electrical Characteristics table. This value is critical for calculating required base drive resistor values in fixed-bias or emitter-follower configurations. At lower currents (e.g., I_C = 1 A), V_BE(on) drops to approximately 1.5 V, reflecting standard BJT exponential junction behavior.