onsemi TIP35C

Overview

TIP35C from onsemi is an NPN silicon power bipolar junction transistor designed for high-current linear amplification and hard-switching applications, with 100 V_CEO, 25 A continuous collector current, 125 W power dissipation at T_C = 25°C, and h_FE ≥ 15 at I_C = 15 A - used in audio power amplifiers, motor drive H-bridge legs, and DC-DC converter output stages.

For engineers reviewing the TIP35C datasheet, pinout, applications, or equivalent options, this page delivers verified electrical ratings, TO-247 package terminal mapping, safe operating area limits, thermal resistance data, and validated alternative parts for industrial power design validation and BOM optimization.

Technical Context

The TIP35C operates as a medium-speed, high-current NPN power switch with f_T ≥ 3.0 MHz at I_C = 1.0 A and V_CE = 10 V, supporting switching times under 20 ns turn-on (t_r) and sub-microsecond turn-off (t_f). Its R_JC = 1.0 °C/W enables efficient heatsink coupling in high-power Class AB amplifiers.

It features low leakage (I_CEO ≤ 1.0 mA at V_CE = 100 V), robust second breakdown immunity up to 100 V/25 A (dc), and reverse bias SOA rated for inductive load clamping - making it suitable for unregulated SMPS output stages and relay drivers requiring sustained avalanche-free operation.

Key Specifications

Pinout & Package

Package: TO-247 (Case 340L, Style 3), 4-pin through-hole with dual collector terminals for enhanced current handling and thermal path redundancy.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJE13009 and BD249C, the TIP35C uniquely combines 100 V rating, 25 A current, 125 W dissipation, and validated RBSOA - making it the only option among the three suitable for high-power linear amplification and industrial DC switching without paralleling or derating.

Availability

TIP35C is available at Aetrix Electronics and suitable for audio amplifier output stages, motor drive H-bridges, and industrial relay drivers requiring stable component supply across extended production lifecycles.

Supply support for TIP35C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The TIP35C belongs to onsemi's legacy high-power discrete transistor family, engineered for ruggedized industrial power conversion, audio amplification, and electromechanical control where reliability under thermal and electrical stress is critical.

FAQ

What is the maximum collector-emitter voltage rating for the TIP35C?

The TIP35C has a maximum collector-emitter sustaining voltage (V_CEO(sus)) of 100 V DC, confirmed in the "Maximum Ratings" table of the official onsemi datasheet (Rev. 7, June 2024). This rating applies under specified test conditions (I_C = 30 mA, I_B = 0) and defines the absolute upper limit for safe operation without avalanche breakdown. Exceeding this voltage risks permanent device failure.

Is the TIP35C pin-compatible with the TIP35B or TIP35A?

Yes, the TIP35C shares identical pinout, package outline (TO-247), and terminal configuration with TIP35A and TIP35B - all feature pins 1 (Base), 2 (Collector), 3 (Emitter), and 4 (Collector). However, they differ in voltage rating: TIP35A = 60 V, TIP35B = 80 V, TIP35C = 100 V. Substituting TIP35C for lower-voltage variants is safe; substituting downward requires verification against circuit voltage stress.

What is the thermal resistance from junction to case for the TIP35C?

The TIP35C has a junction-to-case thermal resistance (R_JC) of 1.0 °C/W, as specified in the "Thermal Characteristics" section of the onsemi datasheet. This value is measured under standard mounting conditions with thermal compound and a flat heatsink surface, and it enables accurate calculation of junction temperature rise (ΔT_J = P_D × 1.0) for thermal design validation of the TIP35C in high-power applications.

Does the TIP35C support switching operation at high frequencies?

The TIP35C has a current-gain bandwidth product (f_T) of 3.0 MHz minimum at I_C = 1.0 A, V_CE = 10 V, and f = 1.0 MHz, per the "Dynamic Characteristics" table. While usable in PWM-based switching up to ~100 kHz with appropriate base drive, its primary design focus is high-current linear and quasi-linear operation - not RF or high-frequency SMPS. For >500 kHz switching, MOSFETs or RF BJTs are preferred.

Can the TIP35C be used in complementary pairs with the TIP36C?

Yes, the TIP35C (NPN) and TIP36C (PNP) are explicitly designed as complementary devices in the same family, sharing matched V_CEO (100 V), I_C (25 A), P_D (125 W), and thermal characteristics. Their datasheet lists them jointly in marking diagrams, SOA curves, and ordering tables - confirming intended use in Class AB audio outputs, H-bridges, and other symmetrical power stages where matched gain, voltage, and thermal behavior are essential for the TIP35C and TIP36C pair.