onsemi TIS93

Overview

TIS93 from Fairchild Semiconductor is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-to-medium power circuits, with a -40 V V_CEO, -800 mA I_C, and DC current gain (h_FE) of 100–300 at -50 mA collector current; it operates across -55°C to +150°C and is commonly used in discrete logic interfaces and load-switching stages.

For engineers reviewing the TIS93 datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-92 package compatibility, PNP polarity, saturation voltage of -0.25 V at -50 mA/-5 mA drive, thermal resistance of 200°C/W, and suitability for linear amplification or saturated switching below 500 mA loads.

Technical Context

The TIS93 is a silicon PNP BJT optimized for DC-coupled amplification and on/off switching in analog and digital signal paths. Its design emphasizes stable h_FE over temperature, low V_CE(sat) under moderate drive, and robust breakdown ratings including -40 V V_(BR)CEO and -5.0 V V_(BR)EBO.

It features a single-junction structure with no integrated protection diodes or bias resistors, requiring external base current control. Thermal performance is defined by R_θJA = 200°C/W and PD = 625 mW at 25°C, derating linearly above ambient.

Key Specifications

Pinout & Package

Package: TO-92 - 3-lead through-hole plastic package with standard lead spacing (1.27 mm pitch), body height ≤ 4.58 mm, and JEDEC-standard mechanical outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Compared with MPSA92 and BC557, the TIS93 offers balanced performance for 40 V-class switching and amplification up to 500 mA, with superior thermal dissipation (625 mW vs. 625 mW for MPSA92 but higher derating slope than BC557) and narrower h_FE range for more predictable biasing.

Availability

TIS93 is available at Aetrix Electronics and suitable for relay drivers, discrete level shifters, linear regulator pass elements, and LED current sink drivers requiring stable component supply and long-term industrial availability.

Supply support for TIS93 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor manufacturer specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The TIS93 belongs to Fairchild's legacy PNP general-purpose amplifier family, engineered for cost-sensitive, medium-current analog and switching applications in industrial controls and consumer electronics.

FAQ

What is the maximum continuous collector current rating for the TIS93?

The TIS93 has an absolute maximum continuous collector current (I_C) of -800 mA, though the device datasheet specifies it is intended for use up to -500 mA in general-purpose amplifier and switch applications. Derating is required above 25°C ambient, and actual usable current depends on PCB layout, heatsinking, and duty cycle. The TIS93 must not be operated beyond its 625 mW power dissipation limit at room temperature.

Is the TIS93 pin-compatible with other TO-92 PNP transistors like the BC557 or MPSA92?

The TIS93 uses the standard TO-92 package with pinout 1=Collector, 2=Base, 3=Emitter, matching BC557 and MPSA92. However, pin compatibility does not guarantee functional interchangeability due to differences in V_CEO, h_FE, and saturation characteristics. For example, the TIS93's -40 V rating differs from MPSA92's -300 V, and its h_FE range (100–300) is narrower than BC557's (110–800). Always verify circuit operation when substituting the TIS93.

What is the typical V_BE(on) of the TIS93 and how does it affect base drive design?

The TIS93 exhibits a typical V_BE(on) of -1.0 V at V_CE = -2.0 V and I_C = -50 mA. This value is critical for calculating base resistor values in switching configurations. For instance, driving the TIS93 from a 3.3 V microcontroller output requires a base resistor sized to deliver ~5 mA base current while accounting for the -1.0 V forward drop. The TIS93's consistent V_BE(on) simplifies bias network design across temperature and process variation.

Can the TIS93 be used in linear amplifier configurations, and what gain bandwidth product should be expected?

Yes, the TIS93 is specified for general-purpose amplification, with h_FE = 100–300 at -50 mA. However, the datasheet does not specify f_T (transition frequency) or gain-bandwidth product. It is intended for low-frequency (<1 MHz) analog stages such as sensor signal conditioning or audio preamplifiers where high-speed response is not required. For RF or wideband applications, the TIS93 is not recommended; consult the TIS93 datasheet for small-signal parameters before deploying in linear mode.

Does the TIS93 have built-in ESD protection or integrated base resistors?

No, the TIS93 is a bare-die PNP bipolar transistor with no integrated ESD protection diodes, base-emitter shunt resistors, or current-limiting features. External components-including base series resistors, emitter degeneration resistors, and optional transient suppressors-are required for robust operation. This architecture gives designers full control over biasing and protection but places responsibility for reliability on the external circuit. The TIS93 must be handled with standard ESD precautions during assembly.