onsemi TIS93_J35Z

Overview

TIS93_J35Z from Fairchild Semiconductor is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-voltage, medium-current applications, with V_CEO = −40 V, I_C = −800 mA continuous, h_FE = 100–300 at −50 mA, and V_CE(sat) = −0.25 V at −50 mA/−5 mA - used in discrete power stage control and signal inversion circuits.

For engineers reviewing the TIS93_J35Z datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-92 package compatibility, PNP polarity, −40 V breakdown rating, −800 mA collector current capability, and thermal resistance of 200 °C/W for ambient-limited designs.

Technical Context

The TIS93_J35Z operates as a silicon PNP BJT with fixed-emitter biasing topology, supporting linear amplification (V_CE = −2.0 V, I_C = −50 mA) and saturated switching (I_B = −5.0 mA, I_C = −50 mA). Its DC current gain spans 100–300, and it exhibits low saturation voltage (−0.25 V) under defined drive conditions.

Thermal design is constrained by R_θJA = 200 °C/W and P_D = 625 mW at 25°C, derating 5.0 mW/°C above ambient. Junction temperature must remain within −55 to +150 °C per absolute maximum ratings, with V_(BR)CEO = −40 V confirmed at I_C = −10 mA, I_B = 0.

Key Specifications

Pinout & Package

Package: TO-92 - 3-lead through-hole plastic package with standard lead spacing (1.27 mm pitch), body height ≤ 4.58 mm, and JEDEC-compliant mechanical dimensions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier and switching applications.

Compared with TIS93_J35Z, MPSA92 offers superior voltage ruggedness but reduced current capacity, while BC557 provides wider h_FE range at significantly lower I_C - making TIS93_J35Z optimal for balanced medium-current, medium-voltage PNP switching where TO-92 fit and 800 mA capability are essential.

Availability

TIS93_J35Z is available at Aetrix Electronics and suitable for motor driver stages, level-shifting interfaces, discrete power regulators, and LED current sink circuits requiring stable component supply and long-term manufacturability.

Supply support for TIS93_J35Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor manufacturer specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The TIS93_J35Z belongs to Fairchild's legacy general-purpose PNP transistor family, engineered for cost-effective, reliable switching and amplification in consumer, industrial, and automotive auxiliary circuits.

FAQ

What is the maximum continuous collector current rating for the TIS93_J35Z?

The TIS93_J35Z has a maximum continuous collector current rating of −800 mA at T_A = 25°C. This value decreases with rising ambient temperature due to thermal derating of 5.0 mW/°C. The device must be operated within its safe operating area (SOA), especially under pulsed conditions, which require consultation with Fairchild's factory per datasheet note 2. TIS93_J35Z is not rated for repetitive avalanche or secondary breakdown beyond specified limits.

Is the TIS93_J35Z pin-compatible with other TO-92 PNP transistors like the BC557?

No, the TIS93_J35Z is not pin-compatible with BC557. While both use TO-92 packages, the TIS93_J35Z has Collector-Base-Emitter (1-2-3) pinout, whereas BC557 uses Emitter-Base-Collector (1-2-3). Swapping them without board revision will cause circuit failure. Always verify pinout using the official TIS93_J35Z datasheet before substitution. TIS93_J35Z pin assignments are explicitly defined as Pin 1 = Collector, Pin 2 = Base, Pin 3 = Emitter.

What is the typical V_BE(on) of the TIS93_J35Z and how does it affect base drive design?

The typical V_BE(on) of the TIS93_J35Z is −1.0 V at V_CE = −2.0 V and I_C = −50 mA. This value remains relatively stable across operating current and temperature, enabling predictable base resistor calculation for saturation. For example, driving −50 mA collector current with −5.0 mA base current requires ~−1.0 V across the base-emitter junction, leaving the remainder of the drive voltage to drop across the series base resistor. TIS93_J35Z performance depends on maintaining this forward bias condition.

Can the TIS93_J35Z be used in linear amplifier configurations?

Yes, the TIS93_J35Z is characterized for linear operation with h_FE = 100–300 at V_CE = −2.0 V and I_C = −50 mA, and its low noise and consistent gain make it suitable for low-frequency audio preamplifiers, sensor signal conditioning, and feedback control stages. However, its f_T is not specified in the datasheet, limiting use to sub-MHz applications. Thermal stability must be ensured in Class-A biasing due to R_θJA = 200 °C/W. TIS93_J35Z is not optimized for RF or high-speed switching.

Does the TIS93_J35Z meet RoHS requirements?

The original TIS93_J35Z datasheet (Rev. B, November 2002) predates RoHS enforcement and does not declare compliance. As a legacy Fairchild part, its RoHS status depends on the specific manufacturing lot and date code. Aetrix Electronics supplies only RoHS-compliant versions verified through material declarations and supplier certification. Customers requiring full compliance documentation for TIS93_J35Z should request lot-specific test reports prior to integration.