onsemi TIS97_J35Z

Overview

TIS97_J35Z from Fairchild Semiconductor is an NPN general-purpose amplifier and switch rated for continuous collector current up to 500 mA, with V_CEO = 40 V, V_BE(on) = 0.45–0.65 V at I_C = 100 µA, and DC current gain (h_FE) of 250–700. It is commonly used in low-voltage signal amplification and discrete switching circuits in consumer and industrial control modules.

For engineers reviewing the TIS97_J35Z datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-92 package compatibility, thermal resistance (R_θJA = 200 °C/W), noise figure (2.0–3.0 dB), and suitability for linear amplification or saturated switching below 300 mA load.

Technical Context

The TIS97_J35Z operates as a silicon NPN bipolar junction transistor fabricated using Fairchild's Process 10. Its design supports both linear amplification (with h_fe ≥ 250 at 100 µA and f = 1 kHz) and switching applications, with verified breakdown ratings including V_(BR)CEO = 40 V and V_EBO = 6.0 V.

Thermal performance is defined by R_θJC = 83.3 °C/W and R_θJA = 200 °C/W, and small-signal behavior includes C_cb = 1.0–4.0 pF and C_eb = 16 pF - parameters critical for high-frequency stability and bandwidth-limited gain staging.

Key Specifications

Pinout & Package

Package: TO-92 (standard straight lead, no lead clip, 2000 units per box). Pin configuration confirmed per Fairchild TO-92 mechanical drawing: Emitter (pin 1), Base (pin 2), Collector (pin 3), with flat side facing viewer and leads downward.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with PN2222A and BC547B, the TIS97_J35Z delivers superior noise performance and higher guaranteed h_FE at low currents while maintaining robust 40 V/500 mA operation - making it optimal for cost-sensitive, medium-current analog and switching roles where both linearity and drive capability matter.

Availability

TIS97_J35Z is available at Aetrix Electronics and suitable for audio pre-amplification, DC motor interface, and industrial sensor signal conditioning requiring stable component supply and long-term obsolescence management.

Supply support for TIS97_J35Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor manufacturer specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The TIS97_J35Z belongs to Fairchild's legacy NPN general-purpose transistor family designed for cost-effective, reliable amplification and switching in consumer, industrial, and automotive-adjacent electronics.

FAQ

What is the maximum continuous collector current rating for the TIS97_J35Z?

The TIS97_J35Z has a maximum continuous collector current (I_C) rating of 500 mA at T_A = 25°C. Derating is required above 25°C per the specified 5.0 mW/°C thermal derating curve. This rating ensures reliable operation in switching and amplification roles without exceeding junction temperature limits when properly heatsinked or mounted on adequate copper area.

Is the TIS97_J35Z pin-compatible with the PN2222A in TO-92 packages?

Yes, the TIS97_J35Z uses the standard TO-92 package with E-B-C pinout (flat side facing, leads down), matching the mechanical and electrical pin assignment of the PN2222A. However, differences in h_FE, noise figure, and absolute maximum ratings mean functional substitution requires validation in the target circuit - especially for low-noise or high-gain applications where TIS97_J35Z's 250–700 h_FE and 2.0 dB NF provide distinct advantages.

What is the typical noise figure of the TIS97_J35Z and under what conditions is it measured?

The TIS97_J35Z exhibits a noise figure of 2.0 dB at V_CE = 5.0 V, I_C = 30 µA, R_g = 10 kΩ, f = 1.0 kHz, and BW = 100 Hz, and 3.0 dB at I_C = 100 µA with BW = 15.7 kHz. These values confirm its suitability for low-noise preamplifier stages - a key differentiator versus many general-purpose transistors with NF > 4 dB. The TIS97_J35Z's low-noise performance is directly supported by its internal structure and Process 10 fabrication.

Does the TIS97_J35Z support switching applications, and what is its typical V_BE(on) in saturation?

Yes, the TIS97_J35Z is explicitly designed for switching applications with collector currents up to 300 mA. Its V_BE(on) is specified as 0.45–0.65 V at V_CE = 5.0 V and I_C = 100 µA - a value that remains consistent in saturation when driven with sufficient base current. For reliable switching, I_B should be set to ≥ I_C/10 to ensure deep saturation, leveraging the TIS97_J35Z's high h_FE to minimize drive power.

What thermal resistance values apply to the TIS97_J35Z in free-air conditions?

The TIS97_J35Z has a junction-to-ambient thermal resistance (R_θJA) of 200 °C/W and a junction-to-case value (R_θJC) of 83.3 °C/W, both measured at T_A = 25°C. These values define the device's self-heating behavior: at 500 mA and V_CE = 1 V, power dissipation reaches 500 mW, raising junction temperature by ~100°C above ambient - confirming the need for careful thermal layout or derating in sustained operation. The TIS97_J35Z's thermal specs are fully documented in its Fairchild datasheet Rev. B1.