Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Isolators > Isolators - Gate Drivers

Toshiba Semiconductor and Storage TLP5212(D4,E

Name: TLP5212(D4,E
Brand: Toshiba Semiconductor and Storage
SKU: TLP5212(D4,E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: TLP5212(D4,E

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Isolators - Gate Drivers

Package:: 16-SOIC (0.295", 7.50mm Width)

Datasheet:: TLP5212(D4,E.pdf

Description:: OPTOISO 5KV 1CH GATE DVR 16SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,317

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

TLP5212(D4,E from Toshiba Electronic Devices & Storage Corporation is a smart gate drive photocoupler designed for high-reliability IGBT and MOSFET gate control in industrial power converters. It delivers ±2.5 A peak output current, integrates desaturation detection with 1.27 μs blanking time, provides active Miller clamping, under-voltage lockout (UVLO), and isolated fault feedback - all within a long-creepage SO16L package rated for 5000 Vrms isolation.

For engineers reviewing the TLP5212(D4,E datasheet, TLP5212(D4,E pinout, TLP5212(D4,E application, or TLP5212(D4,E equivalent, this device is selected for high-noise motor drives, photovoltaic inverters, and AC servo systems requiring robust galvanic isolation, fast propagation (<250 ns), and integrated protection functions without external supervision circuitry.

Technical Context

The TLP5212(D4,E implements dual-channel optically isolated control: one infrared LED pair drives a high-gain photo IC that generates gate voltage (VOUT) while monitoring DESAT, UVLO, and Miller clamp conditions on the secondary side. Its internal architecture combines linear amplification for precise gate drive with digital fault latching via the FAULT pin, enabling autonomous shutdown during overcurrent or desaturation events.

It operates across -40 °C to +110 °C with 15–30 V output supply (VCC2–VEE), supports both positive and negative gate drive configurations, and achieves ±25 kV/μs common-mode transient immunity - critical for fast-switching SiC and IGBT modules in noisy inverter bridges.

Key Specifications

Parameter	Value and Actual Design Meaning
Peak Output Current	±2.5 A max - sufficient to directly drive medium-power IGBTs (e.g., 600 V / 50 A) without external boost stages.
Propagation Delay	250 ns max - ensures tight timing control in high-frequency PWM (≤25 kHz) motor and PV inverter applications.
Isolation Voltage	5000 Vrms min - meets reinforced insulation requirements for industrial equipment per UL1577 and EN60747-5-5 (D4 option).
DESAT Blanking Time	1.27 μs typ - suppresses false triggering during IGBT turn-on transients while preserving fast fault response.
Common-Mode Immunity	±25 kV/μs min - maintains signal integrity in high-dV/dt environments like three-phase bridge outputs.
Operating Temperature	-40 °C to +110 °C - validated for under-hood automotive inverters and industrial enclosures without derating.
Supply Voltage Range	VCC2–VEE = 15–30 V - compatible with standard 24 V DC bus rails and supports negative gate bias via VEE pin.

Pinout & Package

Package: SO16L (Toshiba 11-10M1), 8.0 mm minimum creepage distance, 0.4 mm internal isolation thickness, weight 0.364 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1, 4	VS	Input-side ground reference for LED driver and FAULT feedback logic.
2	VCC1	+2.7–5.5 V supply for input-side FAULT circuitry and LED bias control.
3	FAULT	Open-collector fault status output - pulls low during DESAT, UVLO, or Miller clamp activation.
5, 8	CATHODE	LED cathode terminals - dual inputs enable redundant or differential LED drive.
6, 7	ANODE	LED anode terminals - threshold input current ≤6 mA enables direct MCU GPIO driving.
9, 12	VEE	Negative output supply rail - required only when implementing negative gate drive (VE – VEE > 0 V).
10	VCLAMP	Miller clamp sink node - actively clamps gate voltage during Miller plateau to prevent spurious turn-on.
11	VOUT	Main gate drive output - delivers ±2.5 A into IGBT/MOSFET gate with <250 ns delay.
13	VCC2	Positive output supply rail (15–30 V) - powers gate driver stage and internal protection circuits.
14	DESAT	Desaturation sense input - monitors IGBT collector-emitter voltage via external RC network to detect overcurrent.
15	VLED	Test-only pin - not connected in normal operation; reserved for factory testing.
16	VE	IGBT emitter reference - serves as common return for VCC2, VEE, VCLAMP, and DESAT sensing.

Key Features

Feature	Design Value
Integrated Desaturation Detection	Configurable DESAT threshold (6.0–7.5 V) with 1.27 μs leading-edge blanking - eliminates need for external comparator and timer circuits.
Active Miller Clamping	VCLAMP pin sinks current during Miller plateau - prevents false IGBT turn-on caused by high dV/dt coupling, improving system reliability.
Soft Gate Turn-Off	Controlled VOUT fall profile reduces EMI and switching losses during fault recovery - avoids hard short-circuit turn-off stress.
Under-Voltage Lockout (UVLO)	Hysteresis of 0.4–1.4 V between 9.2–12.5 V thresholds - ensures gate drive remains disabled until stable VCC2 is established.
Isolated Fault Feedback	FAULT pin provides single-wire, electrically isolated status reporting - simplifies host controller interface and enables multi-device fault aggregation.

Applications

Industrial Inverters	Photovoltaic Power Conditioning
Use Scenario: Three-phase motor drives in HVAC compressors and industrial pumps operating at 10–20 kHz PWM frequency. IC Role / Device Role / Timing Role: Primary gate driver for 600–1200 V IGBT half-bridge modules with real-time DESAT monitoring and Miller clamping. Use Value: Enables compact, high-efficiency inverter designs with built-in protection - eliminating discrete fault detection components and reducing BOM count by ≥3 parts.	Use Scenario: String-level solar inverters converting DC from photovoltaic arrays into grid-synchronized AC. IC Role / Device Role / Timing Role: Isolated gate driver for high-side and low-side IGBTs in H-bridge and multilevel topologies with fast fault response (<500 ns). Use Value: Guarantees safe shutdown during ground-fault or arc-flash events - meeting IEC 62109 and UL 1741 SB requirements for rapid DC disconnection.
AC Servo Drives	Air Conditioner Inverters
Use Scenario: High-bandwidth position-controlled servo amplifiers for robotics and CNC machinery requiring <1 μs fault latency. IC Role / Device Role / Timing Role: Dual-channel isolated driver supporting simultaneous high-side/low-side switching with synchronized DESAT blanking. Use Value: Achieves <250 ns propagation delay and ±25 kV/μs CMTI - maintaining encoder synchronization and preventing torque ripple during transient load changes.	Use Scenario: Variable-speed compressor drives in residential and commercial air conditioners with stringent EMI and thermal constraints. IC Role / Device Role / Timing Role: Compact gate driver for 600 V IGBTs operating at 15–30 kHz, leveraging soft turn-off and UVLO to extend component lifetime. Use Value: Reduces thermal stress on gate drivers through integrated Miller clamping - increasing mean time between failures (MTBF) by ≥3× versus discrete solutions.

Industrial Inverters

Photovoltaic Power Conditioning

Use Scenario: Three-phase motor drives in HVAC compressors and industrial pumps operating at 10–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: Primary gate driver for 600–1200 V IGBT half-bridge modules with real-time DESAT monitoring and Miller clamping.

Use Value: Enables compact, high-efficiency inverter designs with built-in protection - eliminating discrete fault detection components and reducing BOM count by ≥3 parts.

Use Scenario: String-level solar inverters converting DC from photovoltaic arrays into grid-synchronized AC.

IC Role / Device Role / Timing Role: Isolated gate driver for high-side and low-side IGBTs in H-bridge and multilevel topologies with fast fault response (<500 ns).

Use Value: Guarantees safe shutdown during ground-fault or arc-flash events - meeting IEC 62109 and UL 1741 SB requirements for rapid DC disconnection.

AC Servo Drives

Air Conditioner Inverters

Use Scenario: High-bandwidth position-controlled servo amplifiers for robotics and CNC machinery requiring <1 μs fault latency.

IC Role / Device Role / Timing Role: Dual-channel isolated driver supporting simultaneous high-side/low-side switching with synchronized DESAT blanking.

Use Value: Achieves <250 ns propagation delay and ±25 kV/μs CMTI - maintaining encoder synchronization and preventing torque ripple during transient load changes.

Use Scenario: Variable-speed compressor drives in residential and commercial air conditioners with stringent EMI and thermal constraints.

IC Role / Device Role / Timing Role: Compact gate driver for 600 V IGBTs operating at 15–30 kHz, leveraging soft turn-off and UVLO to extend component lifetime.

Use Value: Reduces thermal stress on gate drivers through integrated Miller clamping - increasing mean time between failures (MTBF) by ≥3× versus discrete solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT gate driver photocoupler applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TLP5702(D4,E	Same SO16L package, ±2.5 A output, but lacks integrated DESAT blanking circuit - requires external RC network and comparator.	Suitable for cost-sensitive designs where DESAT functionality is implemented externally or omitted.	Select TLP5702(D4,E only if DESAT detection is handled by MCU or separate analog circuit - TLP5212(D4,E provides full hardware-based protection.
ACPL-332J-000E	SO-8 package, ±2.5 A output, includes DESAT and UVLO, but rated for 3750 Vrms isolation and -40 °C to +105 °C operation.	Better suited for space-constrained consumer-grade inverters where 5000 Vrms isolation is not mandated.	Choose ACPL-332J-000E for compact layouts and lower-cost certification - TLP5212(D4,E is preferred for industrial safety-critical systems requiring D4-rated EN60747-5-5 compliance.

Compared with TLP5702(D4,E and ACPL-332J-000E, the TLP5212(D4,E uniquely combines 5000 Vrms reinforced isolation, integrated DESAT blanking, and soft turn-off in a single SO16L package - making it the only option qualified for high-reliability industrial inverters demanding full hardware fault autonomy.

Availability

TLP5212(D4,E is available at Aetrix Electronics and suitable for industrial inverters, photovoltaic power conditioning systems, and AC servo drives requiring stable component supply, long-term lifecycle support, and certified safety compliance.

Supply support for TLP5212(D4,E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and optoelectronics, with core expertise in high-reliability isolation and energy-efficient power conversion.

The TLP5212(D4,E belongs to Toshiba's Smart Gate Driver Photocoupler product line, engineered specifically for noise-immune, self-protecting IGBT/MOSFET control in industrial motor drives, renewable energy systems, and high-voltage power supplies.

FAQ

What is the purpose of the VLED pin on the TLP5212(D4,E?

The VLED pin (Pin 15) is designated for factory testing only and must remain unconnected in all end-user applications. It is not part of the functional signal path and has no electrical role during normal operation of the TLP5212(D4,E. Connecting or loading this pin may interfere with internal test calibration and is strictly prohibited in production designs using the TLP5212(D4,E.

Does the TLP5212(D4,E support negative gate drive configurations?

Yes, the TLP5212(D4,E supports negative gate drive via dedicated VEE pins (9 and 12) and VE (Pin 16). When VE – VEE > 0 V, a second 1 μF bypass capacitor must be placed between VEE and VE, with total lead length ≤1 cm. This configuration enables active Miller clamping and reliable turn-off for high-side IGBTs in three-phase bridges - a key capability confirmed in the TLP5212(D4,E datasheet Section 5 and Figure 12.2.

How does the DESAT detection function work in the TLP5212(D4,E?

The TLP5212(D4,E monitors IGBT collector-emitter voltage via Pin 14 (DESAT) using an internal comparator with a 6.0–7.5 V threshold. Upon overcurrent detection, it initiates 1.27 μs leading-edge blanking to suppress turn-on transients, then asserts FAULT (Pin 3) low after 343–500 ns. The TLP5212(D4,E also provides tDESAT(MUTE) of 5 μs to prevent repeated fault latching - all fully integrated without external components.

What safety certifications apply to the TLP5212(D4,E?

The TLP5212(D4,E carries UL1577 (File No. E67349), cUL CSA Component Acceptance (File No. E67349), and EN60747-5-5 certification under Option D4 - verified by Toshiba's official documentation (Section 17). The "D4" suffix in the part number explicitly denotes compliance with the highest insulation performance tier of EN60747-5-5, including partial discharge and surge withstand validation required for industrial safety-critical systems.

Can the TLP5212(D4,E drive SiC MOSFETs effectively?

Yes, the TLP5212(D4,E is suitable for driving 650 V and 1200 V SiC MOSFETs due to its ±25 kV/μs common-mode transient immunity, <250 ns propagation delay, and ±2.5 A peak output current - parameters validated across -40 °C to +110 °C. Its active Miller clamping (VCLAMP) and soft turn-off further mitigate gate oscillation risks inherent in high-speed SiC switching, as confirmed in Toshiba's application notes for wide-bandgap gate drive.

TLP5212(D4,E Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: 16-SOIC (0.295", 7.50mm Width)

Packaging:: Tube

Product Status:: Active

Technology:: Optical Coupling

Number of Channels:: 1

Voltage - Isolation:: 5000Vrms

Common Mode Transient Immunity (Min):: 25kV/µs

Propagation Delay tpLH / tpHL (Max):: 250ns, 250ns

Pulse Width Distortion (Max):: 50ns

Rise / Fall Time (Typ):: 57ns, 56ns

Current - Output High, Low:: 2A, 2A

Current - Peak Output:: 2.5A

Voltage - Forward (Vf) (Typ):: 1.67V

Current - DC Forward (If) (Max):: 25 mA

Voltage - Output Supply:: 15V ~ 30V

Grade:: -

Qualification:: -

Operating Temperature:: -40°C ~ 110°C

Mounting Type:: Surface Mount

Supplier Device Package:: 16-SO

Approval Agency:: CQC, CSA, cUL, UL, VDE

TLP5212(D4,E FAQ

1.How can I place an order for TLP5212(D4,E through Aetrix?

Please submit a Request for Quotation (RFQ) for TLP5212(D4,E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TLP5212(D4,E reliable?

The price and inventory of TLP5212(D4,E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TLP5212(D4,E is usually 5 days.

3.What payment methods are accepted for TLP5212(D4,E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TLP5212(D4,E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TLP5212(D4,E?

TLP5212(D4,E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TLP5212(D4,E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TLP5212(D4,E?

For technical support, including TLP5212(D4,E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TLP5212(D4,E requirements.

6.How does Aetrix verify that TLP5212(D4,E is sourced from the original manufacturer or authorized distributors?

All TLP5212(D4,E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TLP5212(D4,E meets industry standards.

7.What is the process for return or replacement of TLP5212(D4,E?

All TLP5212(D4,E units undergo pre-shipment inspection (PSI). If there is an issue with TLP5212(D4,E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TLP5212(D4,E part is unused and in its original packaging.

Return procedure for TLP5212(D4,E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…