Toshiba Semiconductor and Storage TLP5212(TP,E
- Part No.:
- TLP5212(TP,E
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
TLP5212(TP,E.pdf
- Description:
- OPTOISO 5KV 1CH GATE DVR 16SO
- Quantity:
- Payment:

- Shipping:

Inventory:1,497
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Product details
Overview
TLP5212(TP,E) from Toshiba Electronic Devices & Storage Corporation is a smart gate drive photocoupler designed for isolated IGBT and MOSFET gate control in high-reliability power conversion systems. It delivers ±2.5 A peak output current, integrates desaturation detection, active Miller clamping, soft turn-off, and under-voltage lockout (UVLO), and operates across −40 °C to 110 °C with 5000 Vrms isolation - deployed in industrial inverters and photovoltaic power conditioning systems.
For engineers reviewing the TLP5212(TP,E) datasheet, TLP5212(TP,E) pinout, TLP5212(TP,E) application, or TLP5212(TP,E) equivalent, this page provides verified functional specifications, SO16L package layout, fault-handling behavior, thermal operating margins, and direct alternatives for gate driver substitution in high-CMTI motor drives and renewable energy converters.
Technical Context
The TLP5212(TP,E) implements dual-channel optically isolated control: one infrared LED pair drives a high-gain photo-IC output stage capable of sourcing/sinking ±2.5 A, while a second LED channel feeds a dedicated fault feedback path via the FAULT pin. Its internal architecture includes a DESAT comparator with 1.27 μs leading-edge blanking, UVLO thresholds at 10.5–12.5 V, and Miller clamp activation referenced to VCLAMP and VE pins.
Operation requires two independent supply domains: a 2.7–5.5 V input-side rail (VCC1) powering the LED and FAULT logic, and a 15–30 V output-side rail (VCC2–VEE) enabling gate drive swing up to ±30 V. Bypass capacitors (1 μF) are mandatory between VCC2/VE and VEE/VE to stabilize the linear amplifier, especially under negative gate drive conditions where VE–VEE > 0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Output Current | ±2.5 A max - sufficient to directly drive IGBTs up to 1200 V/100 A or SiC MOSFETs with low gate charge in hard-switching topologies. |
| Isolation Voltage | 5000 Vrms min - meets reinforced insulation requirements for industrial mains-connected equipment per UL1577 and EN60747-5-5. |
| Common-Mode Transient Immunity | ±25 kV/μs min - ensures robust operation during fast dV/dt transients in high-power inverters without false triggering. |
| Propagation Delay | 250 ns max - enables precise timing control in PWM frequencies up to 100 kHz with minimal skew between units (±150 ns). |
| DESAT Threshold Voltage | 6.0–7.5 V typ - sets overcurrent trip point for IGBT collector-emitter voltage monitoring with external R/C network. |
| UVLO Threshold | 10.5–12.5 V (rising), 9.2–11.1 V (falling) - prevents unsafe gate drive during insufficient output supply, with 0.4–1.4 V hysteresis for noise immunity. |
| Operating Temperature | −40 °C to +110 °C - supports deployment in sealed industrial enclosures and outdoor PV inverters without derating. |
Pinout & Package
Package: SO16L (TOSHIBA designation 11-10M1), long creepage/clearance (8.0 mm creepage), surface-mount, RoHS-compliant, weight 0.364 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 4 | VS | Input-side ground reference for LED and FAULT circuitry; must be connected to common LED cathode return. |
| 2 | VCC1 | +2.7–5.5 V supply for input-side logic and FAULT output; powers internal LED driver and fault comparator. |
| 3 | FAULT | Open-collector fault status output; pulled low during DESAT, UVLO, or overtemperature events to signal controller. |
| 5, 8 | CATHODE | LED cathode terminals; connect to system ground or current-sink driver for optical input activation. |
| 6, 7 | ANODE | LED anode terminals; driven by 7.5–12 mA forward current to enable gate drive output. |
| 9, 12 | VEE | Negative output supply rail; required only when implementing negative gate drive (VE–VEE > 0 V). |
| 10 | VCLAMP | Miller clamp sink node; connects to IGBT gate via external Schottky diode to suppress false turn-on during switching. |
| 11 | VOUT | Main gate drive output; delivers ±2.5 A into gate load with rise/fall times <60 ns and 10–90% transition. |
| 13 | VCC2 | Positive output supply (15–30 V); powers high-side gate driver stage and internal linear amplifier. |
| 14 | DESAT | Desaturation sense input; monitors IGBT VCE via external resistor divider; triggers fault after blanking time. |
| 15 | VLED | No-connect test pad; left unconnected in application circuits to avoid interference. |
| 16 | VE | IGBT emitter/common output reference; serves as return for VCC2, VEE, VCLAMP, and VOUT; bypass capacitor required. |
Key Features
| Feature | Design Value |
|---|---|
| Active Miller Clamping | Clamps gate voltage during high dV/dt via VCLAMP pin and external diode, preventing spurious IGBT turn-on without external components. |
| Integrated DESAT Protection | Detects IGBT saturation loss using pin 14 with 1.27 μs blanking; asserts FAULT within 343–500 ns to halt PWM before destructive failure. |
| Soft Gate Turn-Off | Reduces dI/dt stress during fault shutdown by controlling VOUT slew rate, minimizing voltage overshoot and EMI generation. |
| Under-Voltage Lockout (UVLO) | Disables output when VCC2–VE drops below 10.5 V (rising) or 9.2 V (falling), ensuring gate drive remains off until stable supply is restored. |
| High CMTI Performance | ±25 kV/μs minimum common-mode immunity on both high- and low-level output states, validated per JEDEC JESD22-A114. |
Applications
| Industrial Inverters | Photovoltaic Power Conditioning |
|---|---|
|
Use Scenario: Three-phase motor drives in HVAC compressors and pump systems requiring reliable IGBT switching at 10–20 kHz. IC Role / Device Role / Timing Role: Isolated gate driver providing ±2.5 A peak current, DESAT fault detection, and UVLO protection for 1200 V IGBT modules. Use Value: Eliminates need for discrete optocoupler + gate driver IC combinations, reducing BOM count and PCB area while improving timing consistency. |
Use Scenario: String-level DC–AC conversion in solar microinverters and central PV inverters operating at 50–100 kHz. IC Role / Device Role / Timing Role: High-CMTI gate driver with integrated Miller clamping and DESAT sensing for SiC MOSFET half-bridges exposed to rapid bus transients. Use Value: Enables single-chip protection against shoot-through and overcurrent without external comparators or delay circuits. |
| Air Conditioner Inverters | AC Servo Drives |
|
Use Scenario: Variable-speed compressor control in residential and commercial air conditioners with compact form factor constraints. IC Role / Device Role / Timing Role: Smart photocoupler delivering soft turn-off, active clamping, and fault feedback to MCU over isolated FAULT line. Use Value: Reduces thermal stress on IGBTs during frequent start-stop cycles and improves system MTBF through early fault detection. |
Use Scenario: Precision position control in robotics and CNC machinery using high-bandwidth servo amplifiers with fast current-loop response. IC Role / Device Role / Timing Role: Low-propagation-delay (250 ns max) gate driver supporting PWM update rates >50 kHz with deterministic timing. Use Value: Maintains tight gate timing alignment across multiple channels, minimizing torque ripple and acoustic noise in PMSM motors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT/MOSFET gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ACPL-332J-000E | Lower peak output (±2.0 A), no integrated DESAT blanking; requires external RC filter for fault detection. | Suitable for cost-sensitive industrial drives where full DESAT functionality is not mandated. | Select when board space allows external filtering and system-level fault handling is acceptable. |
| SI8274DB-D-IS | Digital isolator + gate driver; higher propagation delay (300 ns), no built-in Miller clamp or DESAT comparator. | Better suited for Si MOSFETs with lower gate charge and less aggressive dV/dt environments. | Choose for designs already using digital isolators and requiring flexible logic-level configuration over analog fault signaling. |
Compared with ACPL-332J-000E and SI8274DB-D-IS, the TLP5212(TP,E) offers superior integration of protection functions - including blanked DESAT detection, active Miller clamping, and soft turn-off - making it optimal for high-reliability IGBT-based inverters where component count reduction and deterministic fault response are critical.
Availability
TLP5212(TP,E) is available at Aetrix Electronics and suitable for industrial inverters, photovoltaic power conditioning systems, and air conditioner inverters requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for TLP5212(TP,E) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for power electronics, motor control, and industrial automation, with emphasis on safety-certified isolation and ruggedized packaging.
The TLP5212(TP,E) belongs to Toshiba's smart photocoupler product line, engineered specifically for isolated gate driving in high-voltage, high-noise power conversion systems where functional safety and compact integration are essential.
FAQ
What is the maximum recommended operating temperature for the TLP5212(TP,E)?
The TLP5212(TP,E) is rated for continuous operation from −40 °C to +110 °C ambient temperature. This range is guaranteed across all key parameters including output current, propagation delay, and DESAT threshold. Operation beyond 110 °C requires derating per the absolute maximum ratings table and may impact long-term reliability. The TLP5212(TP,E) maintains full functionality without performance degradation within this envelope.
Does the TLP5212(TP,E) require external bypass capacitors, and if so, where?
Yes - two 1 μF ceramic bypass capacitors are mandatory for stable operation of the TLP5212(TP,E). One must be placed between pin 13 (VCC2) and pin 16 (VE); a second is required between pin 9 or 12 (VEE) and pin 16 (VE) whenever negative gate drive is used (i.e., when VE–VEE > 0 V). Total lead length for each capacitor must not exceed 1 cm to prevent switching instability or degraded CMTI performance.
How does the DESAT protection function work in the TLP5212(TP,E)?
The TLP5212(TP,E) monitors IGBT collector-emitter voltage via pin 14 (DESAT) using an internal comparator with a 6.0–7.5 V threshold. Upon detecting overcurrent, it applies 1.27 μs leading-edge blanking to ignore switching transients, then asserts the FAULT pin low within 343–500 ns. The TLP5212(TP,E) simultaneously initiates soft turn-off and disables VOUT to prevent device destruction while signaling the host controller.
What is the purpose of the VLED pin (pin 15) on the TLP5212(TP,E)?
Pin 15 (VLED) is a no-connect test pad used exclusively during factory wafer probing and final test. It must remain unconnected in all application circuits. Routing traces to or from VLED may introduce parasitic coupling that degrades CMTI performance or causes unpredictable FAULT behavior. The TLP5212(TP,E) operates correctly with VLED floating and unpopulated.
Can the TLP5212(TP,E) drive both IGBTs and SiC MOSFETs?
Yes - the TLP5212(TP,E) supports both IGBTs and SiC MOSFETs. Its ±2.5 A peak output current and 250 ns max propagation delay suit fast-switching SiC devices, while its integrated DESAT detection, Miller clamping, and UVLO provide robust protection for IGBTs. For SiC, ensure external gate resistors and DESAT network values are optimized per the application note "Smart Gate Driver Coupler Tips for Designing DESAT Detection Circuits" to match the TLP5212(TP,E)'s 6.6 V typical DESAT threshold.
TLP5212(TP,E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Optical Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 5000Vrms
- Common Mode Transient Immunity (Min):
- 25kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 250ns, 250ns
- Pulse Width Distortion (Max):
- 50ns
- Rise / Fall Time (Typ):
- 57ns, 56ns
- Current - Output High, Low:
- 2A, 2A
- Current - Peak Output:
- 2.5A
- Voltage - Forward (Vf) (Typ):
- 1.67V
- Current - DC Forward (If) (Max):
- 25 mA
- Voltage - Output Supply:
- 15V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 110°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SO
- Approval Agency:
- CQC, CSA, cUL, UL, VDE
TLP5212(TP,E FAQ
1.How can I place an order for TLP5212(TP,E through Aetrix?
Please submit a Request for Quotation (RFQ) for TLP5212(TP,E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TLP5212(TP,E reliable?
The price and inventory of TLP5212(TP,E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TLP5212(TP,E is usually 5 days.
3.What payment methods are accepted for TLP5212(TP,E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TLP5212(TP,E transactions.
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4.How is shipping managed for TLP5212(TP,E?
TLP5212(TP,E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TLP5212(TP,E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TLP5212(TP,E?
For technical support, including TLP5212(TP,E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TLP5212(TP,E requirements.
6.How does Aetrix verify that TLP5212(TP,E is sourced from the original manufacturer or authorized distributors?
All TLP5212(TP,E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TLP5212(TP,E meets industry standards.
7.What is the process for return or replacement of TLP5212(TP,E?
All TLP5212(TP,E units undergo pre-shipment inspection (PSI). If there is an issue with TLP5212(TP,E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TLP5212(TP,E part is unused and in its original packaging.
Return procedure for TLP5212(TP,E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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