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Home > Products > Isolators > Isolators - Gate Drivers

Toshiba Semiconductor and Storage TLP5222(TP,E

Name: TLP5222(TP,E
Brand: Toshiba Semiconductor and Storage
SKU: TLP5222(TP,E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TLP5222(TP,E

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Isolators - Gate Drivers

Package:: 16-SOIC (0.295", 7.50mm Width)

Datasheet:: TLP5222(TP,E.pdf

Description:: OPTOISO 5KV 1CH GATE DVR 16SO

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Product details

Overview

TLP5222(TP,E) from Toshiba Electronic Devices & Storage Corporation is a smart gate driver photocoupler designed for isolated IGBT and power MOSFET control in high-reliability industrial power systems. It delivers ±2.5 A peak output current, features integrated desaturation detection, active Miller clamp, soft turn-off, and under-voltage lockout (UVLO), and operates across −40 to 110 °C in a long-creepage SO16L package.

For engineers reviewing the TLP5222(TP,E) datasheet, TLP5222(TP,E) pinout, TLP5222(TP,E) application, or TLP5222(TP,E) equivalent, this page provides verified functional context, isolation-critical timing specs (e.g., 250 ns max propagation delay), safety-certified parameters (UL1577, EN 60747-5-5 Option D4), and real-world design guidance for photovoltaic inverters, UPS, and AC servo drives.

Technical Context

The TLP5222(TP,E) integrates dual infrared LEDs with two high-gain, high-speed photo-detector ICs to achieve galvanically isolated gate drive and bidirectional fault feedback. Its architecture supports both positive and negative gate drive configurations via dedicated VEE, VCC2, and VE terminals, with internal linear amplifiers stabilized by mandatory 1 μF bypass capacitors between pins 13–16 and optionally 9/12–16.

It implements a multi-stage protection scheme: DESAT sensing with 1.4 μs leading-edge blanking and 25.5 μs mute time, UVLO with 11.4 V typical threshold and 1.4 V hysteresis, and active Miller clamping referenced to VCLAMP (pin 10). Common-mode transient immunity exceeds ±25 kV/μs, validated under 1500 V_P-P pulses at 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
Peak Output Current	±2.5 A max - sufficient to directly drive IGBTs up to 600 A and 1200 V without external boosters
Propagation Delay Time	250 ns max - enables switching frequencies up to 25 kHz with tight timing control in inverter gate loops
Isolation Voltage	5000 V_rms min - meets reinforced insulation requirements for industrial 690 V AC mains and PV DC link applications
Operating Temperature	−40 to 110 °C - supports operation in sealed enclosures of motor drives and solar inverters without derating
DESAT Threshold Voltage	6.6 V typ. - sets precise overcurrent trip point for 600–1200 V IGBTs using standard external R_DESAT/C_BLANK
Common-Mode Transient Immunity	±25 kV/μs min - ensures robust operation during fast dV/dt transients in high-power SiC/GaN-based converters
Supply Voltage Range	VCC2–VE = 15–30 V - accommodates standard 24 V industrial rails while maintaining >2 V margin above UVLO+ (12.5 V)

Pinout & Package

Package: SO16L (Toshiba designation 11-10M1), surface-mount, long creepage (8.0 mm min) and clearance, 0.4 mm internal isolation thickness, weight 0.364 g.

Pin/Terminal	Circuit Role	Design Meaning
1, 4	VS	Input-side ground reference for LED and FAULT feedback circuitry
2	VCC1	+2.7 to +5.5 V supply for input-side logic and LED driver
3	FAULT	Open-collector output signaling desaturation or UVLO fault; pulled high when healthy
5, 8	CATHODE	LED cathode terminals - dual-channel input interface requiring series current limiting
6, 7	ANODE	LED anode terminals - accepts 7.5–12 mA IF(ON) for reliable turn-on
9, 12	VEE	Negative output-side rail - optional for negative gate drive; must be bypassed if VE–VEE > 0 V
10	VCLAMP	Miller clamp sink node - connects to IGBT gate to suppress false turn-on during high dV/dt
11	VOUT	Main gate drive output - delivers ±2.5 A into gate capacitance with <250 ns delay
13	VCC2	+15 to +30 V positive output-side supply - powers gate driver and protection circuits
14	DESAT	Desaturation monitor input - senses IGBT collector voltage via external diode/resistor network
15	VLED	No-connect test pad - not for system use; floating during operation
16	VE	Output-side common reference - ties VCC2, VEE, and VCLAMP return paths; requires 1 μF bypass to VCC2

Key Features

Feature	Design Value
Integrated Desaturation Detection	Configurable trip at 6.6 V with 1.4 μs blanking and 25.5 μs mute - eliminates need for discrete comparator and timer circuits
Active Miller Clamp	2.5 A sinking capability on VCLAMP pin - prevents spurious IGBT turn-on during high dv/dt commutation
Soft Gate Turn-Off	Controlled discharge path through internal circuitry - reduces EMI and voltage overshoot during IGBT shutdown
Isolated FAULT Feedback	Dedicated open-collector FAULT pin (pin 3) with <0.4 V low-level voltage - enables direct connection to MCU interrupt or PLC input
Under-Voltage Lockout (UVLO)	11.4 V typical enable threshold with 1.4 V hysteresis - ensures gate drive only activates within safe VCC2 operating range

Applications

Photovoltaic Inverters	Industrial Motor Drives
Use Scenario: Isolating gate signals between microcontroller PWM outputs and 1200 V SiC IGBT half-bridges in string inverters. IC Role / Device Role / Timing Role: Smart gate driver photocoupler providing isolated drive, DESAT monitoring, and FAULT reporting with <250 ns timing precision. Use Value: Enables single-chip protection against shoot-through and overcurrent without external comparators or optocouplers, reducing BOM count by ≥3 components.	Use Scenario: Driving 600 A IGBT modules in vector-controlled AC servos with regenerative braking. IC Role / Device Role / Timing Role: Isolated gate driver with active Miller clamp and soft turn-off to suppress gate oscillation during high-dv/dt regeneration. Use Value: Eliminates need for external Miller clamp transistors and RC snubbers, improving layout compactness and thermal reliability in enclosed cabinets.
Uninterruptible Power Supplies	High-Voltage Industrial Inverters
Use Scenario: Controlling parallel IGBT stacks in 400 V DC-link UPS output stages with redundant fault signaling. IC Role / Device Role / Timing Role: Dual-channel isolated driver delivering synchronized ±2.5 A gate current and isolated FAULT status per channel. Use Value: Provides independent fault reporting per IGBT leg, enabling selective shutdown and graceful degradation without full system halt.	Use Scenario: Gate driving in 690 V AC industrial drives where creepage >8 mm and reinforced isolation are mandated. IC Role / Device Role / Timing Role: Safety-certified photocoupler meeting UL1577 and EN 60747-5-5 (Option D4) for reinforced insulation. Use Value: Reduces certification effort by embedding VDE-approved isolation structure, avoiding external isolation transformers or digital isolators.

Photovoltaic Inverters

Industrial Motor Drives

Use Scenario: Isolating gate signals between microcontroller PWM outputs and 1200 V SiC IGBT half-bridges in string inverters.

IC Role / Device Role / Timing Role: Smart gate driver photocoupler providing isolated drive, DESAT monitoring, and FAULT reporting with <250 ns timing precision.

Use Value: Enables single-chip protection against shoot-through and overcurrent without external comparators or optocouplers, reducing BOM count by ≥3 components.

Use Scenario: Driving 600 A IGBT modules in vector-controlled AC servos with regenerative braking.

IC Role / Device Role / Timing Role: Isolated gate driver with active Miller clamp and soft turn-off to suppress gate oscillation during high-dv/dt regeneration.

Use Value: Eliminates need for external Miller clamp transistors and RC snubbers, improving layout compactness and thermal reliability in enclosed cabinets.

Uninterruptible Power Supplies

High-Voltage Industrial Inverters

Use Scenario: Controlling parallel IGBT stacks in 400 V DC-link UPS output stages with redundant fault signaling.

IC Role / Device Role / Timing Role: Dual-channel isolated driver delivering synchronized ±2.5 A gate current and isolated FAULT status per channel.

Use Value: Provides independent fault reporting per IGBT leg, enabling selective shutdown and graceful degradation without full system halt.

Use Scenario: Gate driving in 690 V AC industrial drives where creepage >8 mm and reinforced isolation are mandated.

IC Role / Device Role / Timing Role: Safety-certified photocoupler meeting UL1577 and EN 60747-5-5 (Option D4) for reinforced insulation.

Use Value: Reduces certification effort by embedding VDE-approved isolation structure, avoiding external isolation transformers or digital isolators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ACPL-332J-000E	Lower peak output (±2.0 A), no integrated DESAT mute function, 3750 V_rms isolation	Limited to <900 V IGBTs; requires external DESAT timer circuit for mute functionality	Choose for cost-sensitive 400 V AC drives where full TLP5222(TP,E) protection suite is unnecessary
SI8274ABD-IS1	Digital isolator-based driver; higher propagation delay (300 ns), no native DESAT analog sense input	Requires external op-amp/comparator for DESAT; supports higher CMTI (125 kV/μs) but lacks integrated clamp	Prefer for SiC/GaN systems demanding ultra-high CMTI, accepting added board area and component count for protection

Compared with ACPL-332J-000E and SI8274ABD-IS1, the TLP5222(TP,E) uniquely combines ±2.5 A drive strength, analog DESAT sensing with configurable blanking/mute, and integrated Miller clamp in a single SO16L package certified to 5000 V_rms, making it optimal for space-constrained, safety-critical 600–1200 V IGBT systems.

Availability

TLP5222(TP,E) is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and compliance with UL, CSA, VDE, and CQC safety standards.

Supply support for TLP5222(TP,E) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for industrial, automotive, and energy infrastructure applications, with leadership in optoelectronics and power device integration.

The TLP5222(TP,E) belongs to Toshiba's Smart Gate Driver Photocoupler product line, engineered specifically for simplified, safety-certified IGBT/MOSFET isolation in high-voltage renewable energy and factory automation systems.

FAQ

What is the maximum recommended gate resistor value for TLP5222(TP,E) when driving a 1200 V IGBT?

The TLP5222(TP,E) datasheet specifies Rg = 10 Ω in all switching characterization tests (e.g., tpLH/tpHL). While higher values reduce peak current, exceeding 10 Ω increases propagation delay and may impair DESAT response time. For 1200 V IGBTs, maintain Rg ≤ 10 Ω and use the integrated Miller clamp (pin 10) to suppress oscillation - confirmed in Toshiba Application Note "Smart Gate Driver Coupler Tips for Designing DESAT Detection Circuits". The TLP5222(TP,E)'s ±2.5 A drive strength is optimized for this Rg range.

Does TLP5222(TP,E) support negative gate drive, and what pins are required?

Yes, the TLP5222(TP,E) supports negative gate drive via pins 9 and 12 (VEE) and pin 16 (VE). When VE – VEE > 0 V, a second 1 μF bypass capacitor must be placed between VEE and VE, as specified in Section 5 and Fig 12.2. This configuration enables −5 V to −15 V negative bias for improved IGBT turn-off immunity. The TLP5222(TP,E)'s dual VEE pins provide low-inductance return paths essential for stable negative drive operation.

How is DESAT detection configured on TLP5222(TP,E), and what external components are mandatory?

DESAT detection on the TLP5222(TP,E) uses pin 14 (DESAT) with external components: a 600–1200 V fast-recovery diode (e.g., CUS05F30), blanking capacitor C_BLANK, and R_DESAT ≥ 500 Ω for pin protection. A Zener (CUZ8V2) is recommended across DESAT and VE. These are mandatory per Section 12 and Fig 12.1–12.2. The TLP5222(TP,E) internally sets the 6.6 V trip threshold and handles blanking/mute timing - no external timer IC is needed.

What safety certifications apply to TLP5222(TP,E), and does the (TP,E) suffix indicate VDE approval?

The TLP5222(TP,E) carries UL1577 (File E67349), cUL CSA Component Acceptance (File E67349), and CQC GB4943.1/GB8898 approvals. VDE EN 60747-5-5 certification requires the D4 option (e.g., TLP5222(D4-TP,E)); the base TLP5222(TP,E) is *not* VDE-approved. Per Section 17, D4 qualification mandates separate ordering - the (TP,E) suffix denotes tape-and-reel packaging only, not enhanced safety rating. Always verify the full part number for compliance-critical designs.

Can TLP5222(TP,E) drive both N-channel and P-channel IGBTs, and how is polarity controlled?

The TLP5222(TP,E) is designed exclusively for N-channel IGBTs and power MOSFETs. Its VOUT (pin 11) delivers high-side sourcing and low-side sinking current (±2.5 A), compatible only with standard N-channel gate structures. Polarity is fixed by internal architecture - no configuration pins or mode settings exist. For P-channel devices, a level-shifting buffer would be required upstream, which negates the TLP5222(TP,E)'s integrated protection benefits. All application circuits in the datasheet (Figs 12.1–12.2) assume N-channel topology.

TLP5222(TP,E Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: 16-SOIC (0.295", 7.50mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Optical Coupling

Number of Channels:: 1

Voltage - Isolation:: 5000Vrms

Common Mode Transient Immunity (Min):: 25kV/µs

Propagation Delay tpLH / tpHL (Max):: 250ns, 250ns

Pulse Width Distortion (Max):: 50ns

Rise / Fall Time (Typ):: 58ns, 57ns

Current - Output High, Low:: 2A, 2A

Current - Peak Output:: 2.5A

Voltage - Forward (Vf) (Typ):: 1.67V

Current - DC Forward (If) (Max):: 25 mA

Voltage - Output Supply:: 15V ~ 30V

Grade:: -

Qualification:: -

Operating Temperature:: -40°C ~ 110°C

Mounting Type:: Surface Mount

Supplier Device Package:: 16-SO

Approval Agency:: CQC, CSA, cUL, UL, VDE

TLP5222(TP,E FAQ

1.How can I place an order for TLP5222(TP,E through Aetrix?

Please submit a Request for Quotation (RFQ) for TLP5222(TP,E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TLP5222(TP,E reliable?

The price and inventory of TLP5222(TP,E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TLP5222(TP,E is usually 5 days.

3.What payment methods are accepted for TLP5222(TP,E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TLP5222(TP,E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TLP5222(TP,E?

TLP5222(TP,E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TLP5222(TP,E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TLP5222(TP,E?

For technical support, including TLP5222(TP,E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TLP5222(TP,E requirements.

6.How does Aetrix verify that TLP5222(TP,E is sourced from the original manufacturer or authorized distributors?

All TLP5222(TP,E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TLP5222(TP,E meets industry standards.

7.What is the process for return or replacement of TLP5222(TP,E?

All TLP5222(TP,E units undergo pre-shipment inspection (PSI). If there is an issue with TLP5222(TP,E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TLP5222(TP,E part is unused and in its original packaging.

Return procedure for TLP5222(TP,E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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