Toshiba Semiconductor and Storage TLP5752H(D4LF4,E

Overview

TLP5752H(D4LF4,E) from Toshiba Electronic Devices & Storage Corporation is a reinforced-insulation photocoupler integrating an infrared LED and high-speed photo IC in a 6-pin SO6L package. It delivers rail-to-rail totem-pole output, ±2.5 A peak output current, ±35 kV/µs common-mode transient immunity, and 5000 Vrms isolation - enabling robust gate driving for IGBTs and MOSFETs in industrial inverters and air conditioner power stages.

For engineers reviewing the TLP5752H(D4LF4,E) datasheet, TLP5752H(D4LF4,E) pinout, TLP5752H(D4LF4,E) application, or TLP5752H(D4LF4,E) equivalent, key selection criteria include guaranteed operation up to 125°C, UVLO protection, 150 ns max propagation delay, and compliance with EN IEC 60747-5-5 (via D4 option), UL 1577, and CSA Component Acceptance.

Technical Context

The TLP5752H(D4LF4,E) implements a buffer logic output stage with totem-pole configuration, enabling direct drive of power device gates without external level-shifting. Its internal Faraday shield ensures ±35 kV/µs CMTI performance across the full -40°C to +125°C operating range.

This photocoupler operates with 15–30 V supply voltage and features integrated undervoltage lockout (UVLO) with 12.1 V turn-on and 11.1 V turn-off thresholds. Input threshold current is ≤4 mA, and a mandatory 1 µF bypass capacitor must be placed between VCC (Pin 6) and GND (Pin 4) within 1 cm for stable switching.

Key Specifications

Pinout & Package

Package: 6-pin SO6L (Toshiba package code 11-4N1A), surface-mount, creepage/clearance ≥8.0 mm, isolation thickness ≥0.4 mm, weight 0.126 g (typ.). Lead forming option LF4 applied.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar photocoupler gate driver applications.

Compared with Si827x and ACPL-332J, the TLP5752H(D4LF4,E) uniquely combines D4-certified reinforced insulation, ±35 kV/µs CMTI, and integrated UVLO in a single SO6L package - making it optimal for safety-critical, high-noise inverter applications requiring regulatory approval in Japan, Thailand, and EU markets.

Availability

TLP5752H(D4LF4,E) is available at Aetrix Electronics and suitable for industrial inverters, MOSFET/IGBT gate drivers, and air conditioner inverter control systems requiring stable component supply, long-term lifecycle support, and certified reinforced insulation.

Supply support for TLP5752H(D4LF4,E) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components for industrial, automotive, and consumer applications, with core expertise in power devices, logic ICs, and optoelectronics.

The TLP5752H belongs to Toshiba's high-speed, high-isolation photocoupler product line, engineered specifically for noise-immune gate driving in safety-certified power conversion systems including industrial motor drives and home appliance inverters.

FAQ

What is the purpose of the D4 designation in TLP5752H(D4LF4,E)?

The D4 designation in TLP5752H(D4LF4,E) indicates qualification to EN IEC 60747-5-5 for reinforced insulation - a mandatory requirement for safety certification in Japan, Thailand, and EU markets. This includes verified creepage (≥8.0 mm), clearance (≥8.0 mm), and insulation thickness (≥0.4 mm), which are tested and documented separately from the base TLP5752H specification. The TLP5752H(D4LF4,E) part number explicitly denotes this certified variant.

Why is a 1 µF capacitor required between Pin 6 (VCC) and Pin 4 (GND) for TLP5752H(D4LF4,E)?

A 1 µF ceramic capacitor is mandatory between Pin 6 (VCC) and Pin 4 (GND) for TLP5752H(D4LF4,E) to stabilize the internal high-gain photodetector amplifier and prevent oscillation or improper switching. Toshiba specifies placement within 1 cm of the pins to minimize inductance; omission causes unreliable output transitions, especially under high dv/dt conditions. This requirement is confirmed in Section 6 (Internal Circuit) and Section 9 (Recommended Operating Conditions) of the official datasheet for TLP5752H(D4LF4,E).

Does TLP5752H(D4LF4,E) support both high-side and low-side gate driving?

Yes, TLP5752H(D4LF4,E) supports both configurations via its rail-to-rail totem-pole output (Pin 5). When VO = VCC (Pin 6), it actively drives the gate high; when VO = GND (Pin 4), it actively pulls the gate low - eliminating reliance on external pull-down resistors. This dual capability enables direct use in half-bridge gate driver circuits for IGBTs and MOSFETs, as confirmed in the Truth Table (Section 7.1) and Applications list for TLP5752H(D4LF4,E).

What is the maximum operating frequency supported by TLP5752H(D4LF4,E)?

TLP5752H(D4LF4,E) supports up to 50 kHz operation, as specified in Section 9 (Recommended Operating Conditions) under "Operating frequency (f)" with a maximum value of 50 kHz. This limit arises from combined propagation delay (150 ns max), rise/fall times (50 ns/80 ns max), and pulse width distortion constraints. At 50 kHz, the minimum pulse width is ~10 µs - sufficient for most industrial inverter and appliance motor control applications using TLP5752H(D4LF4,E).

How does the UVLO function protect the system when using TLP5752H(D4LF4,E)?

The UVLO in TLP5752H(D4LF4,E) disables the output (VO goes low) when VCC drops below 11.1 V (hysteresis = 1.0 V), preventing partial turn-on of power devices that could cause thermal runaway or shoot-through. Turn-on occurs only above 12.1 V, ensuring sufficient gate drive margin. This behavior is defined in Section 10 (Electrical Characteristics) and protects downstream IGBTs/MOSFETs during brown-out or startup - a critical safeguard confirmed for TLP5752H(D4LF4,E) in all safety-certified applications.