Toshiba Semiconductor and Storage TLP5771(D4-TP,E

Overview

TLP5771(D4-TP,E from Toshiba Electronic Devices & Storage Corporation is a reinforced-insulation photocoupler with infrared LED input and integrated photo IC output, delivering ±1.0 A peak output current, 150 ns max propagation delay, and ±35 kV/µs common-mode transient immunity in a 6-pin SO6L package. It enables bufferless microcontroller drive in compact motor drivers and industrial inverters requiring safety-certified isolation.

For engineers reviewing the TLP5771(D4-TP,E datasheet, TLP5771(D4-TP,E pinout, TLP5771(D4-TP,E application, or TLP5771(D4-TP,E equivalent, key selection criteria include threshold input current (≤2 mA), rail-to-rail output, UVLO protection, VDE EN IEC 60747-5-5 compliance (D4 option), and SO6L footprint compatibility with space-constrained PV power conditioning systems.

Technical Context

The TLP5771(D4-TP,E integrates an infrared LED coupled to a high-gain, high-speed photodetector with totem-pole (buffer logic) output stage, enabling direct microcontroller interface without external buffers. Its internal Faraday shield ensures guaranteed ±35 kV/µs CMTI performance across the full -40°C to +110°C operating range.

This device implements under-voltage lockout (UVLO) with 7.5 V turn-on and 7.5 V hysteresis, supports 10–30 V supply voltage, and requires a mandatory 1 µF bypass capacitor between VCC (pin 6) and GND (pin 4) for stable high-gain amplifier operation-critical for noise-immune gate driving in AC servos.

Key Specifications

Pinout & Package

Package: 6-pin SO6L (Toshiba package code 11-4N1A), surface-mount, creepage/clearance ≥8.0 mm, height ≤2.3 mm, weight 0.126 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar photocoupler gate driver applications.

Compared with TLP5772(D4-TP,E, the TLP5771(D4-TP,E saves board area and cost in single-channel gate drive roles; versus Si8271BD-IS, it eliminates external gate resistors and provides inherent LED-based current limiting-advantageous for robustness in thermally cycling industrial environments.

Availability

TLP5771(D4-TP,E is available at Aetrix Electronics and suitable for photovoltaic power conditioning systems, AC servo drives, and industrial inverters requiring stable component supply with VDE EN IEC 60747-5-5 certification and long-term lifecycle assurance.

Supply support for TLP5771(D4-TP,E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components for industrial, automotive, and consumer applications, with core expertise in power devices, logic ICs, and optoelectronics.

The TLP5771 series belongs to Toshiba's reinforced-insulation photocoupler product line, engineered specifically for high-noise, high-voltage industrial motor control and renewable energy systems demanding certified safety isolation and robust CMTI performance.

FAQ

What safety certifications does the TLP5771(D4-TP,E hold?

The TLP5771(D4-TP,E holds UL 1577 (File No. E67349), cUL CSA Component Acceptance (File No. E67349), VDE EN IEC 60747-5-5, EN IEC 62368-1, and CQC GB4943.1 certifications. The "(D4)" suffix explicitly denotes qualification to the VDE EN IEC 60747-5-5 reinforced insulation standard, validated for use in equipment sold in EU and Japanese markets requiring certified safety isolation.

Why is a 1 µF capacitor required between pins 6 and 4 on the TLP5771(D4-TP,E?

A 1 µF ceramic bypass capacitor must be placed between VCC (pin 6) and GND (pin 4) of the TLP5771(D4-TP,E to stabilize the internal high-gain linear amplifier. Without it, the device may fail to switch reliably due to oscillation or latch-up under high-speed switching conditions. Toshiba specifies placement within 1 cm of the pins to minimize parasitic inductance and ensure effective decoupling across the full -40°C to +110°C operating range.

Can the TLP5771(D4-TP,E drive IGBT gates directly without external components?

Yes, the TLP5771(D4-TP,E can drive IGBT gates directly: its ±1.0 A peak output current, rail-to-rail VO swing, and 150 ns max propagation delay meet typical gate drive requirements for 1200 V/100 A IGBTs in industrial inverters. However, an external gate resistor is still required to control dV/dt and prevent ringing-TLP5771(D4-TP,E provides current sourcing/sinking capability but does not replace gate resistor selection based on specific IGBT characteristics.

What is the meaning of "(D4-TP,E" in the TLP5771(D4-TP,E part number?

In TLP5771(D4-TP,E, "D4" indicates qualification to VDE EN IEC 60747-5-5 reinforced insulation; "TP" denotes tape-and-reel packaging (1500 pcs/reel); and "E" signifies RoHS-compliant, lead-free construction. This full suffix identifies a safety-certified, production-ready variant optimized for automated SMT assembly in industrial equipment requiring traceable, compliant components.

Does the TLP5771(D4-TP,E support under-voltage lockout (UVLO), and what are its thresholds?

Yes, the TLP5771(D4-TP,E includes built-in UVLO with a turn-on threshold of 7.5 V and hysteresis of 7.5 V (i.e., turn-off at ~0 V). This prevents erratic output behavior during power-up/power-down sequences in 10–30 V supply systems. The UVLO function is intrinsic to the photodetector IC and requires no external circuitry-ensuring safe gate drive disablement when VCC falls below operational range.