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Toshiba Semiconductor and Storage TLP5832(TP,E
- Part No.:
- TLP5832(TP,E
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Logic Output Optoisolators
- Package:
- 8-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
TLP5832(TP,E.pdf
- Description:
- IGBT GATE DRIVE PHOTOCOUPLER; SO
- Quantity:
- Payment:
- Shipping:
Inventory:1,490
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Product details
Overview
TLP5832(TP,E from Toshiba Electronic Devices & Storage Corporation is a high-speed, reinforced-insulation photocoupler with totem-pole output stage, designed for IGBT and power MOSFET gate driving in industrial inverters and home appliance inverters. It delivers ±2.5 A peak output current, 200 ns max propagation delay, ±50 kV/µs common-mode transient immunity, and operates from -40°C to +110°C with 15–30 V supply voltage.
For engineers reviewing the TLP5832(TP,E datasheet, TLP5832(TP,E pinout, TLP5832(TP,E application, or TLP5832(TP,E equivalent, this device serves as a safety-certified, compact SO8L-isolated gate driver requiring no external level-shifting circuitry and supporting fast-switching power stages up to 50 kHz.
Technical Context
The TLP5832(TP,E integrates a GaAlAs infrared LED optically coupled to a monolithic photodetector IC with internal noise shielding and UVLO protection. Its totem-pole output architecture enables direct drive of gate capacitances without external push-pull transistors.
It features guaranteed reinforced insulation per EN IEC 60747-5-5 (with D4 option), UL 1577 (5000 Vrms), and CSA certification. The internal bypass capacitor requirement (1 µF between VCC and GND) ensures stable high-gain amplifier operation under fast transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Peak Current | ±2.5 A max - drives gate capacitance of medium-power IGBTs/MOSFETs directly without external buffers. |
| Propagation Delay | 200 ns max - supports switching frequencies up to 50 kHz with tight timing control. |
| Common-Mode Transient Immunity | ±50 kV/µs min - maintains signal integrity in noisy high-dv/dt inverter environments. |
| Isolation Voltage | 5000 Vrms min - certified for reinforced insulation in industrial and appliance safety-critical systems. |
| Operating Temperature | -40°C to +110°C - suitable for under-hood or enclosed inverter module thermal conditions. |
| Supply Voltage Range | 15–30 V - compatible with standard isolated DC-DC bias rails used in gate driver applications. |
| Threshold Input Current | 5 mA max - enables direct interface with low-power MCU GPIO or logic-level controllers. |
Pinout & Package
Package: 8-pin SO8L (TOSHIBA package code 11-6B101A), surface-mount, 2.3 mm max height, creepage/clearance ≥8.0 mm, isolation thickness ≥0.4 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode | LED anode input - connect to MCU GPIO or driver through current-limiting resistor. |
| 2 | N.C. | No connection - electrically isolated; must remain unconnected per design. |
| 3 | Cathode | LED cathode return - complete input LED path; tie to ground or logic low. |
| 4 | N.C. | No connection - electrically isolated; must remain unconnected per design. |
| 5 | GND | Detector ground reference - connect 1 µF bypass capacitor to Pin 8 (VCC). |
| 6 | GND | Secondary-side ground - tied internally to Pin 5; use for low-inductance grounding. |
| 7 | Output | Push-pull output node - directly drives gate of N-channel IGBT/MOSFET; open-drain not supported. |
| 8 | VCC | Positive supply for detector IC - requires 15–30 V; decouple to Pin 5 with 1 µF ceramic capacitor. |
Key Features
| Feature | Design Value |
|---|---|
| Buffer logic output | Totem-pole configuration eliminates need for external gate driver transistors or level shifters. |
| UVLO protection | Undervoltage lockout activates below ~11 V (VUVLO+ = 11.0–13.5 V), preventing erratic gate drive during brownout. |
| Internal noise shield | Guarantees ±50 kV/µs CMTI - critical for reliable operation in high-di/dt motor drive and inverter circuits. |
| Reinforced insulation | 5000 Vrms isolation with VDE EN IEC 60747-5-5 compliance (D4 option available) - meets IEC 62368-1 system requirements. |
| Compact SO8L footprint | Smaller and thinner than legacy DIP-8 packages - saves PCB area in space-constrained inverter modules. |
Applications
| Industrial Inverters | Air Conditioner Inverters |
|---|---|
Use Scenario: Isolated gate drive for 3-phase IGBT modules in HVAC variable-frequency drives. IC Role / Device Role / Timing Role: High-speed, noise-immune signal isolator providing level-shifted gate control with UVLO monitoring. Use Value: Enables safe, compact inverter designs meeting IEC 61800-5-1 reinforced insulation requirements without external buffer stages. |
Use Scenario: Driving compressor and fan motor MOSFETs in residential split-system air conditioners. IC Role / Device Role / Timing Role: Photocoupler-based gate driver delivering ±2.5 A peak current to switch 600 V Si-MOSFETs at 20–40 kHz. Use Value: Reduces component count vs. opto-IC + discrete transistor solutions while maintaining >50 kV/µs noise immunity. |
| Induction Cooktops | MOSFET/IGBT Gate Drivers |
Use Scenario: Isolating microcontroller PWM signals from half-bridge gate drivers in 3.3 kW induction heating systems. IC Role / Device Role / Timing Role: Fast-response photocoupler ensuring precise dead-time control and fault feedback across isolation barrier. Use Value: Eliminates timing skew between high- and low-side drivers due to matched propagation delays (tpLH/tpHL ≤ 200 ns). |
Use Scenario: General-purpose isolated gate drive for SiC MOSFETs and trench-gate IGBTs in UPS, solar inverters, and EV chargers. IC Role / Device Role / Timing Role: Standalone gate driver IC with integrated UVLO, bypass capacitor support, and robust CMTI. Use Value: Simplifies BOM by replacing discrete optocoupler + dual-transistor driver combinations with single SO8L device. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar photocoupler gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ACPL-332J-500E | SO-8 package, ±2.5 A output, but lower CMTI (25 kV/µs), no internal UVLO, requires external bypass cap. | Suitable for less noisy 20 kHz inverters; lacks reinforced insulation certification for Class II appliances. | Choose when cost sensitivity outweighs CMTI and safety certification requirements. |
| SI8271BD-D-IS | Digital isolator (capacitive), 4 A peak output, 60 kV/µs CMTI, 5 V supply only, no UVLO hysteresis. | Better for high-frequency SiC gate drive (>100 kHz); requires level-shifting for 15–30 V gate bias rails. | Prefer for ultra-fast switching where SO8L footprint and 30 V compatibility are secondary to speed and noise margin. |
Compared with ACPL-332J-500E and SI8271BD-D-IS, the TLP5832(TP,E uniquely combines SO8L packaging, 15–30 V operation, integrated UVLO, and VDE-reinforced insulation - making it optimal for cost-sensitive, safety-certified industrial and white-goods inverter gate drive where board space and regulatory compliance are primary constraints.
Availability
TLP5832(TP,E is available at Aetrix Electronics and suitable for industrial inverters, air conditioner inverters, and induction cooktops requiring stable component supply, RoHS-compliant tape-and-reel delivery, and long-term lifecycle continuity.
Supply support for TLP5832(TP,E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components, including power devices, logic ICs, and optoelectronics, with global manufacturing and quality systems aligned to automotive and industrial standards.
The TLP5832(TP,E belongs to Toshiba's photocoupler product line engineered specifically for high-noise, safety-critical gate driving in motor control and power conversion systems - emphasizing reinforced insulation, high CMTI, and compact surface-mount form factors.
FAQ
What is the maximum operating temperature for the TLP5832(TP,E?
The TLP5832(TP,E is rated for continuous operation from -40°C to +110°C ambient temperature. This range is validated per its absolute maximum ratings and recommended operating conditions, enabling use in enclosed inverter modules and high-temperature appliance environments without derating. The TLP5832(TP,E maintains specified propagation delay, output current, and CMTI performance across this full range.
Does the TLP5832(TP,E require an external bypass capacitor?
Yes - a 1 µF ceramic capacitor must be placed between Pin 8 (VCC) and Pin 5 (GND) within 1 cm of the pins. This is mandatory per Toshiba's datasheet (Section 5 and Section 8 Note) to stabilize the high-gain photodetector IC and prevent oscillation or improper switching. Omitting this capacitor will cause unreliable output behavior in the TLP5832(TP,E.
Is the TLP5832(TP,E certified for reinforced insulation?
Yes - the TLP5832(TP,E meets reinforced insulation requirements per UL 1577 (5000 Vrms), CSA Component Acceptance Service No.5A File E67349, and EN IEC 60747-5-5 when ordered with Option D4 (e.g., TLP5832(D4-TP,E). The base TLP5832(TP,E complies with UL and CSA standards; D4 adds VDE certification for European appliance safety compliance.
What is the purpose of Pins 2 and 4 on the TLP5832(TP,E?
Pins 2 and 4 are designated N.C. (No Connection) in the TLP5832(TP,E datasheet and must remain unconnected. They are electrically isolated from both input and output circuits and serve no functional role. Connecting them risks violating internal isolation barriers and may compromise safety certification or CMTI performance of the TLP5832(TP,E.
Can the TLP5832(TP,E drive SiC MOSFET gates directly?
The TLP5832(TP,E can drive low-to-medium gate charge SiC MOSFETs (Qg ≤ 35 nC) at ≤40 kHz due to its ±2.5 A peak output current and 200 ns propagation delay. However, for high-speed (>100 kHz) or high-Qg SiC devices, external gate resistors and careful layout are required to manage ringing and ensure clean turn-on/turn-off. The TLP5832(TP,E remains effective for many mainstream SiC applications when paired with appropriate gate network design.
TLP5832(TP,E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 8-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Number of Channels:
- 1
- Inputs - Side 1/Side 2:
- 1/0
- Voltage - Isolation:
- 5000Vrms
- Common Mode Transient Immunity (Min):
- 20kV/µs
- Input Type:
- DC
- Output Type:
- Push-Pull, Totem Pole
- Current - Output / Channel:
- -
- Data Rate:
- -
- Propagation Delay tpLH / tpHL (Max):
- 200ns, 200ns
- Rise / Fall Time (Typ):
- 15ns, 8ns
- Voltage - Forward (Vf) (Typ):
- 1.4V
- Current - DC Forward (If) (Max):
- 20mA
- Voltage - Supply:
- 4.5V ~ 5.5V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 110°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
TLP5832(TP,E FAQ
1.How can I place an order for TLP5832(TP,E through Aetrix?
Please submit a Request for Quotation (RFQ) for TLP5832(TP,E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TLP5832(TP,E reliable?
The price and inventory of TLP5832(TP,E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TLP5832(TP,E is usually 5 days.
3.What payment methods are accepted for TLP5832(TP,E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TLP5832(TP,E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TLP5832(TP,E?
TLP5832(TP,E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TLP5832(TP,E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TLP5832(TP,E?
For technical support, including TLP5832(TP,E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TLP5832(TP,E requirements.
6.How does Aetrix verify that TLP5832(TP,E is sourced from the original manufacturer or authorized distributors?
All TLP5832(TP,E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TLP5832(TP,E meets industry standards.
7.What is the process for return or replacement of TLP5832(TP,E?
All TLP5832(TP,E units undergo pre-shipment inspection (PSI). If there is an issue with TLP5832(TP,E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TLP5832(TP,E part is unused and in its original packaging.
Return procedure for TLP5832(TP,E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TLP5832(TP,E Tags
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